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SN54ABT7820GB

Texas Instruments

SN54ABT7820GB by Texas Instruments

SN54ABT7820GB by Texas Instruments is a 512x18 BI-DIRECTIONAL FIFO memory IC with 3-STATE output characteristics. It operates at a max clock frequency of 40 MHz and has a cycle time of 25 ns, making it suitable for high-speed data buffering applications in military-grade systems.

Median Price

-

Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 6,886 parts In-Stock

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6,886

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Digiode

USA . 2,291 parts In-Stock

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2,291

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

One Stop Electronics

USA . 281 parts In-Stock

1+ parts

$1.000

100+ parts

-

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281

$1.000

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Parana Technologies

USA . 575 parts In-Stock

1+ parts

$4.007

100+ parts

-

1k+ parts

$4.472

10k+ parts

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575

$4.007

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$4.472

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DigiPath Technology Company

USA . 900 parts In-Stock

1+ parts

$4.412

100+ parts

$4.059

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-

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900

$4.412

$4.059

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ChromeModa Solutions

Germany . 1,514 parts In-Stock

1+ parts

$4.502

100+ parts

$3.692

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1,514

$4.502

$3.692

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IDEA Electronic Components Group

UK . 344 parts In-Stock

1+ parts

$4.502

100+ parts

-

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$4.052

10k+ parts

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344

$4.502

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$4.052

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AZTECH Wire

Italy . 539 parts In-Stock

1+ parts

$17.639

100+ parts

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539

$17.639

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Corphita

USA . 2,120 parts In-Stock

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Overview

Enhance your electronic projects with the Texas Instruments SN54ABT7820GB FIFO memory IC. Built with precision and quality by a trusted manufacturer, this device offers seamless synchronous operation, fast cycle times, and versatile applications in data storage and retrieval systems. With a wide operating temperature range and military-grade reliability, this FIFO memory ensures optimal performance in challenging environments. Experience the value of efficient data handling, increased productivity, and reliable functionality with the SN54ABT7820GB from Texas Instruments. Upgrade your projects today and unlock a world of possibilities.

Feature Benefit Bullets

Package Body Material: CERAMIC, METAL-SEALED COFIRED

This high-quality and durable package body material ensures reliable performance and long-lasting durability for the FIFO product.

Cycle Time: 25 ns

The fast cycling time of 25 ns allows for quick and efficient data transfer within the FIFO, making it suitable for high-speed applications.

Operating Mode: SYNCHRONOUS

The synchronous operation of this FIFO ensures that data is synchronized and transmitted at specified intervals, maintaining accuracy and reliability in data transfer.

Package Style (Meter): GRID ARRAY

The grid array package style provides a compact and organized layout for the FIFO product, optimizing space efficiency and ease of integration into electronic systems.

Maximum Operating Temperature: 125 °C

With a high maximum operating temperature of 125°C, this FIFO can withstand elevated temperatures and is suitable for use in harsh environments.

Memory IC Type: BI-DIRECTIONAL FIFO

The bi-directional FIFO memory IC type allows for simultaneous read and write operations, enabling seamless data flow and efficient operation of the product.

Technical Specifications

FIFO SN54ABT7820GB attributes and parameters. Explore more FIFO devices from Texas Instruments

Specs

Maximum Access Time:

18 ns

Maximum Clock Frequency (fCLK):

40 MHz

Cycle Time:

25 ns

JESD-30 Code:

S-CPGA-P84

Length:

29.464 mm

Memory Density:

9216 bit

Memory IC Type:

Memory Width:

18

No. of Functions:

1

No. of Terminals:

84

No. of Words:

512 words

No. of Words Code:

512

Operating Mode:

SYNCHRONOUS

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-55 Cel

Organization:

512X18

Output Characteristics:

3-STATE

Output Enable:

YES

Package Body Material:

CERAMIC, METAL-SEALED COFIRED

Package Code:

PGA

Package Equivalence Code:

PGA84M,11X11

Package Shape:

Package Style (Meter):

GRID ARRAY

Parallel or Serial:

PARALLEL

Peak Reflow Temperature (C):

NOT SPECIFIED

Power Supplies (V):

5

Qualification:

Not Qualified

Maximum Seated Height:

5.21 mm

Sub-Category:

FIFOs

Maximum Supply Current:

95 mA

Maximum Supply Voltage (Vsup):

5.5 V

Minimum Supply Voltage (Vsup):

4.5 V

Nominal Supply Voltage / Vsup (V):

5

Surface Mount:

NO

Technology:

BICMOS

Temperature Grade:

Terminal Form:

PIN/PEG

Terminal Pitch:

2.54 mm

Terminal Position:

PERPENDICULAR

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Width:

29.464 mm

Trade Compliance

SN54ABT7820GB Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.71

SB

8542.32.00.70

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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