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SN74ACT3651-30PQR

Texas Instruments

SN74ACT3651-30PQR by Texas Instruments

SN74ACT3651-30PQR by Texas Instruments is a FIFO with 2KX36 organization, 30 ns cycle time, and 5V nominal voltage. It is used in applications requiring fast synchronous operation and 3-STATE output characteristics. Ideal for commercial temperature grade environments.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

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Vyrian

USA . 5,838 parts In-Stock

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Digiode

USA . 107 parts In-Stock

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107

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Parana Technologies

USA . 1,659 parts In-Stock

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$3.621

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$4.134

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1,659

$3.621

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$4.134

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DigiPath Technology Company

USA . 965 parts In-Stock

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$3.988

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$3.669

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965

$3.988

$3.669

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ChromeModa Solutions

Germany . 2,062 parts In-Stock

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$4.069

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$3.337

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$4.069

$3.337

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IDEA Electronic Components Group

UK . 802 parts In-Stock

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$4.069

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$3.662

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802

$4.069

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One Stop Electronics

USA . 917 parts In-Stock

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$6.000

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917

$6.000

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AZTECH Wire

Italy . 202 parts In-Stock

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$12.816

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Corphita

USA . 4,164 parts In-Stock

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Overview

Elevate your digital projects with the high-quality SN74ACT3651-30PQR FIFO from Texas Instruments. This powerful device offers seamless data transfer, efficient storage, and reliable performance in a compact square package. Whether you're working on telecommunications, networking, or industrial automation applications, this synchronous FIFO ensures smooth operation and fast cycle times. Trust in Texas Instruments' renowned expertise and innovation to enhance your designs and unlock endless possibilities. Experience the value and benefits of precision engineering with the SN74ACT3651-30PQR FIFO today.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability while keeping the weight of the product low, making it ideal for electronic devices.

Cycle Time: 30 ns

Fast cycle time ensures quick access to data, improving overall performance.

Operating Mode: SYNCHRONOUS

Synchronous operation allows for data transfers to be precisely timed, reducing errors and improving efficiency.

Nominal Supply Voltage: 5V

Standard voltage requirement makes it compatible with a wide range of systems.

No. of Terminals: 132

Ample terminals allow for efficient data transfer and connectivity.

Memory Width: 36

Wide memory width can accommodate more data, increasing storage capacity.

Technology: CMOS

CMOS technology offers low power consumption and high noise immunity, enhancing the reliability of the product.

Parallel or Serial: PARALLEL

Parallel communication allows for simultaneous data transmission, resulting in faster data transfer speeds.

Memory Density: 73728 bit

High memory density provides ample storage space for data, making it suitable for applications requiring large amounts of memory.

Output Enable: YES

Output enable feature allows for control over when data is output, enhancing flexibility in data management.

Technical Specifications

FIFO SN74ACT3651-30PQR attributes and parameters. Explore more FIFO devices from Texas Instruments

Specs

Maximum Access Time:

15 ns

Additional Features:

MAILBOX

Cycle Time:

30 ns

JESD-30 Code:

S-PQFP-G132

Length:

24.13 mm

Memory Density:

73728 bit

Memory Width:

36

No. of Functions:

1

No. of Terminals:

132

No. of Words:

2048 words

No. of Words Code:

2K

Operating Mode:

SYNCHRONOUS

Maximum Operating Temperature:

70 Cel

Minimum Operating Temperature:

0 Cel

Organization:

2KX36

Output Characteristics:

3-STATE

Output Enable:

YES

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Shape:

Package Style (Meter):

FLATPACK, BUMPER

Parallel or Serial:

PARALLEL

Qualification:

Not Qualified

Maximum Seated Height:

4.57 mm

Maximum Supply Voltage (Vsup):

5.5 V

Minimum Supply Voltage (Vsup):

4.5 V

Nominal Supply Voltage / Vsup (V):

5

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Form:

GULL WING

Terminal Pitch:

.635 mm

Terminal Position:

QUAD

Width:

24.13 mm

Trade Compliance

SN74ACT3651-30PQR Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.71

SB

8542.32.00.70

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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