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SN74ABT7819A-15PH

Texas Instruments

SN74ABT7819A-15PH by Texas Instruments

SN74ABT7819A-15PH by Texas Instruments is a 512Kx18 BI-DIRECTIONAL FIFO memory IC with 67 MHz clock frequency, 15 ns cycle time, and 95 mA max supply current. It operates in synchronous mode and has a memory density of 9437184 bit. Ideal for applications requiring fast data transfer and storage in commercial temperature environments.

Median Price

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Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 4,905 parts In-Stock

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4,905

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Vyrian

USA . 3,030 parts In-Stock

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Nova Conductors

Japan . 23 parts In-Stock

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Parana Technologies

USA . 1,123 parts In-Stock

1+ parts

$2.675

100+ parts

-

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$3.159

10k+ parts

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1,123

$2.675

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$3.159

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DigiPath Technology Company

USA . 2,041 parts In-Stock

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$2.946

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2,041

$2.946

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ChromeModa Solutions

Germany . 3,127 parts In-Stock

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$3.006

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$2.465

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$3.006

$2.465

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IDEA Electronic Components Group

UK . 2,118 parts In-Stock

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$3.006

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$2.705

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2,118

$3.006

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$2.705

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Corohmni

South Africa . 218 parts In-Stock

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$5.121

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218

$5.121

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Ampacity Inc.

Singapore . 726 parts In-Stock

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$15.000

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726

$15.000

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AZTECH Wire

Italy . 355 parts In-Stock

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$17.047

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355

$17.047

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One Stop Electronics

USA . 351 parts In-Stock

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$30.000

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Argo Parts USA

USA . 2,447 parts In-Stock

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Continental Prestige Electronics

USA . 2,209 parts In-Stock

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Corphita

USA . 2,037 parts In-Stock

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Microchip USA

USA . 204 parts In-Stock

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Aranea Global

USA . 50 parts In-Stock

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Overview

Enhance your electronic designs with the SN74ABT7819A-15PH from Texas Instruments, a leading manufacturer known for quality and innovation. This FIFO device offers seamless data transfer in various applications, ensuring reliable performance and efficiency. With a cycle time of just 15 ns and a maximum clock frequency of 67 MHz, this bi-directional FIFO memory IC provides fast and accurate data storage and retrieval. Trust Texas Instruments to deliver cutting-edge technology that meets your design needs and exceeds your expectations. Upgrade your projects with the SN74ABT7819A-15PH and experience the difference today.

Feature Benefit Bullets

Cycle Time: 15 ns

The fast cycle time of 15 ns ensures efficient and speedy data transfer within the FIFO, ideal for high-performance applications.

Nominal Supply Voltage: 5V

The 5V supply voltage provides stable and reliable power to the FIFO, ensuring consistent operation and performance.

Maximum Clock Frequency: 67 MHz

With a high maximum clock frequency of 67 MHz, this FIFO can handle rapid data processing and communication, making it suitable for demanding tasks.

Memory Density: 9437184 bit

The high memory density of 9437184 bits allows for the storage of large amounts of data, making this FIFO ideal for applications requiring extensive data handling.

Output Enable: YES

The output enable feature allows for greater control over data output from the FIFO, enhancing flexibility and functionality in various applications.

Technical Specifications

FIFO SN74ABT7819A-15PH attributes and parameters. Explore more FIFO devices from Texas Instruments

Specs

Maximum Access Time:

10 ns

Maximum Clock Frequency (fCLK):

67 MHz

Cycle Time:

15 ns

JESD-30 Code:

R-PQFP-G80

Length:

20 mm

Memory Density:

9437184 bit

Memory IC Type:

Memory Width:

18

No. of Functions:

1

No. of Terminals:

80

No. of Words:

524288 words

No. of Words Code:

512K

Operating Mode:

SYNCHRONOUS

Maximum Operating Temperature:

70 Cel

Minimum Operating Temperature:

0 Cel

Organization:

512KX18

Output Enable:

YES

Package Body Material:

PLASTIC/EPOXY

Package Code:

QFP

Package Equivalence Code:

QFP80,.7X.9,32

Package Shape:

Package Style (Meter):

FLATPACK

Parallel or Serial:

PARALLEL

Peak Reflow Temperature (C):

NOT SPECIFIED

Power Supplies (V):

5

Qualification:

Not Qualified

Maximum Seated Height:

3.1 mm

Sub-Category:

FIFOs

Maximum Supply Current:

95 mA

Maximum Supply Voltage (Vsup):

5.5 V

Minimum Supply Voltage (Vsup):

4.5 V

Nominal Supply Voltage / Vsup (V):

5

Surface Mount:

YES

Technology:

BICMOS

Temperature Grade:

Terminal Form:

GULL WING

Terminal Pitch:

.8 mm

Terminal Position:

QUAD

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Width:

14 mm

Trade Compliance

SN74ABT7819A-15PH Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.71

SB

8542.32.00.70

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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