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SN74ACT7203-30FM

Texas Instruments

SN74ACT7203-30FM by Texas Instruments

SN74ACT7203-30FM by Texas Instruments is a 2Kx9 FIFO chip with 25MHz clock frequency, operating at 5V. It has a memory density of 18432 bits and operates in commercial temperature grade. This rectangular chip carrier package is suitable for applications requiring asynchronous operation and fast access times.

Median Price

-

Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 2,642 parts In-Stock

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2,642

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Digiode

USA . 223 parts In-Stock

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223

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Parana Technologies

USA . 266 parts In-Stock

1+ parts

$2.761

100+ parts

-

1k+ parts

$3.247

10k+ parts

-

266

$2.761

-

$3.247

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ChromeModa Solutions

Germany . 569 parts In-Stock

1+ parts

$3.102

100+ parts

$2.544

1k+ parts

-

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569

$3.102

$2.544

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IDEA Electronic Components Group

UK . 110 parts In-Stock

1+ parts

$3.102

100+ parts

-

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$2.792

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110

$3.102

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$2.792

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AZTECH Wire

Italy . 575 parts In-Stock

1+ parts

$10.604

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575

$10.604

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One Stop Electronics

USA . 1,097 parts In-Stock

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$21.000

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1,097

$21.000

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Corphita

USA . 2,047 parts In-Stock

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2,047

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DigiPath Technology Company

USA . 1,175 parts In-Stock

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$2.797

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1,175

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$2.797

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Overview

Experience seamless data transfer and efficient memory management with the SN74ACT7203-30FM FIFO by Texas Instruments. Built with top-notch quality and reliability, this chip carrier package offers a versatile solution for various applications. From industrial automation to telecommunications, this asynchronous FIFO ensures smooth operation with a maximum clock frequency of 25 MHz and a memory density of 18432 bits. Trust Texas Instruments to deliver cutting-edge technology that enhances your system performance while maximizing efficiency. Upgrade your device today with the SN74ACT7203-30FM and experience unparalleled value and benefits.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy material makes the product lightweight and durable.

Surface Mount: YES

Allows for easy and convenient mounting on circuit boards.

Operating Mode: ASYNCHRONOUS

Enables independent and simultaneous read and write operations for efficient data handling.

Nominal Supply Voltage / Vsup (V): 5

Works well within standard voltage range, ensuring compatibility with most systems.

Technology: CMOS

Utilizes CMOS technology for low power consumption and reliable performance.

Technical Specifications

FIFO SN74ACT7203-30FM attributes and parameters. Explore more FIFO devices from Texas Instruments

Specs

Maximum Access Time:

30 ns

Maximum Clock Frequency (fCLK):

25 MHz

JESD-30 Code:

R-PQCC-J32

Memory Density:

18432 bit

Memory IC Type:

Memory Width:

9

No. of Terminals:

32

No. of Words:

2048 words

No. of Words Code:

2K

Operating Mode:

ASYNCHRONOUS

Maximum Operating Temperature:

70 Cel

Minimum Operating Temperature:

0 Cel

Organization:

2KX9

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

LDCC32,.5X.6

Package Shape:

Package Style (Meter):

CHIP CARRIER

Peak Reflow Temperature (C):

NOT SPECIFIED

Power Supplies (V):

5

Qualification:

Not Qualified

Maximum Standby Current:

.01 Amp

Sub-Category:

FIFOs

Maximum Supply Current:

95 mA

Nominal Supply Voltage / Vsup (V):

5

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Form:

J BEND

Terminal Pitch:

1.27 mm

Terminal Position:

QUAD

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Trade Compliance

SN74ACT7203-30FM Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.71

SB

8542.32.00.70

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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