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SN74ACT2235-30PM

Texas Instruments

SN74ACT2235-30PM by Texas Instruments

SN74ACT2235-30PM by Texas Instruments is a FIFO memory with 1Kx9 organization, 30ns cycle time, and operates at 5V. It features a 33MHz clock frequency, GULL WING terminals, and is suitable for applications requiring fast data storage and retrieval in commercial temperature environments.

Median Price

-

Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 8,605 parts In-Stock

1+ parts

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8,605

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Digiode

USA . 1,925 parts In-Stock

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1,925

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Parana Technologies

USA . 1,345 parts In-Stock

1+ parts

$4.410

100+ parts

-

1k+ parts

$4.831

10k+ parts

-

1,345

$4.410

-

$4.831

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ChromeModa Solutions

Germany . 2,590 parts In-Stock

1+ parts

$4.955

100+ parts

$4.063

1k+ parts

-

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2,590

$4.955

$4.063

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IDEA Electronic Components Group

UK . 1,559 parts In-Stock

1+ parts

$4.955

100+ parts

-

1k+ parts

$4.460

10k+ parts

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1,559

$4.955

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$4.460

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AZTECH Wire

Italy . 304 parts In-Stock

1+ parts

$12.361

100+ parts

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304

$12.361

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One Stop Electronics

USA . 328 parts In-Stock

1+ parts

$13.000

100+ parts

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328

$13.000

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Corphita

USA . 2,288 parts In-Stock

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2,288

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DigiPath Technology Company

USA . 1,219 parts In-Stock

1+ parts

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100+ parts

$4.467

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1,219

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$4.467

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Overview

Enhance your electronic projects with the SN74ACT2235-30PM by Texas Instruments, a high-quality FIFO memory IC that offers reliable performance and seamless operation. Designed with precision and expertise, this product is perfect for applications requiring fast data transfer and efficient memory management. With a cycle time of just 30 ns and an operating frequency of up to 33 MHz, this device delivers exceptional speed and responsiveness. Trust in Texas Instruments to provide you with innovative solutions that elevate your designs and streamline your workflow. Upgrade your projects today with the SN74ACT2235-30PM and experience the difference in performance and reliability.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Plastic/Epoxy material provides durability and protection for the internal components of the FIFO, ensuring a long lifespan.

Cycle Time: 30 ns

Fast cycle time of 30 ns allows for quick data transfer and processing, making this FIFO suitable for high-speed applications.

Nominal Supply Voltage / Vsup (V): 5

Operates at a standard 5V supply voltage, making it compatible with many existing systems.

No. of Terminals: 64

Having 64 terminals allows for a wide range of input and output capabilities, making it versatile for various connectivity options.

Output Characteristics: 3-STATE

3-STATE output characteristics provide flexibility in controlling the output signals, allowing for efficient data handling and management.

Technology: CMOS

CMOS technology offers low power consumption and high noise immunity, making this FIFO energy-efficient and reliable in noisy environments.

Memory Density: 9216 bit

With a high memory density of 9216 bits, this FIFO can store a large amount of data efficiently, suitable for applications requiring extensive data buffering.

Technical Specifications

FIFO SN74ACT2235-30PM attributes and parameters. Explore more FIFO devices from Texas Instruments

Specs

Maximum Access Time:

25 ns

Additional Features:

BYPASS-XCVR

Maximum Clock Frequency (fCLK):

33 MHz

Cycle Time:

30 ns

JESD-30 Code:

S-PQFP-G64

Length:

10 mm

Memory Density:

9216 bit

Memory IC Type:

Memory Width:

9

No. of Functions:

1

No. of Terminals:

64

No. of Words:

1024 words

No. of Words Code:

1K

Operating Mode:

ASYNCHRONOUS

Maximum Operating Temperature:

70 Cel

Minimum Operating Temperature:

0 Cel

Organization:

1KX9

Output Characteristics:

3-STATE

Output Enable:

YES

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

QFP64,.47SQ,20

Package Shape:

Package Style (Meter):

FLATPACK, LOW PROFILE, FINE PITCH

Parallel or Serial:

PARALLEL

Peak Reflow Temperature (C):

NOT SPECIFIED

Power Supplies (V):

5

Qualification:

Not Qualified

Maximum Seated Height:

1.6 mm

Sub-Category:

FIFOs

Maximum Supply Voltage (Vsup):

5.5 V

Minimum Supply Voltage (Vsup):

4.5 V

Nominal Supply Voltage / Vsup (V):

5

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Form:

GULL WING

Terminal Pitch:

.5 mm

Terminal Position:

QUAD

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Width:

10 mm

Trade Compliance

SN74ACT2235-30PM Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.71

SB

8542.32.00.70

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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