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CD74HC40105M96G4

Texas Instruments

CD74HC40105M96G4 by Texas Instruments

CD74HC40105M96G4 by Texas Instruments is a FIFO memory with 16x4 organization, operating at 12 MHz clock frequency. It has a cycle time of 500 ns and can operate in synchronous mode. This small outline package is suitable for military-grade applications requiring fast data storage and retrieval.

Median Price

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Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

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Digiode

USA . 4,682 parts In-Stock

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Vyrian

USA . 2,763 parts In-Stock

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Nova Conductors

Japan . 34 parts In-Stock

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Parana Technologies

USA . 588 parts In-Stock

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$2.182

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$2.693

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DigiPath Technology Company

USA . 1,177 parts In-Stock

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$2.403

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$2.211

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ChromeModa Solutions

Germany . 3,253 parts In-Stock

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$2.452

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IDEA Electronic Components Group

UK . 1,960 parts In-Stock

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$2.452

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$2.207

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AZTECH Wire

Italy . 424 parts In-Stock

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$10.399

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One Stop Electronics

USA . 1,133 parts In-Stock

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$16.000

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Ampacity Inc.

Singapore . 604 parts In-Stock

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$25.000

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Authorized Procurement Solutions

USA . 5,000 parts In-Stock

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Lixinc

USA . 3,289 parts In-Stock

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Argo Parts USA

USA . 2,941 parts In-Stock

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Continental Prestige Electronics

USA . 2,184 parts In-Stock

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Corphita

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Bastille Electronics

Australia . 40 parts In-Stock

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Overview

Experience seamless data transfer with the CD74HC40105M96G4 FIFO by Texas Instruments. Known for their high-quality products, Texas Instruments delivers reliable performance in every application. This FIFO device offers customers value and efficiency, making it ideal for a wide range of industries. Streamline your processes and enhance productivity with this innovative solution.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Durable material that provides protection for the internal components.

Cycle Time: 500 ns

Fast data transfer speeds, suitable for high-speed applications.

Operating Mode: SYNCHRONOUS

Efficient data transfer synchronized with clock signals.

Maximum Operating Temperature: 125 °C

Can withstand high temperatures, suitable for harsh environments.

Memory IC Type: OTHER FIFO

Specifically designed for FIFO (First In, First Out) operations, ensuring efficient data handling.

Technical Specifications

FIFO CD74HC40105M96G4 attributes and parameters. Explore more FIFO devices from Texas Instruments

Specs

Maximum Access Time:

2250 ns

Maximum Clock Frequency (fCLK):

12 MHz

Cycle Time:

500 ns

JESD-30 Code:

R-PDSO-G16

JESD-609 Code:

e4

Length:

9.9 mm

Memory Density:

64 bit

Memory IC Type:

Memory Width:

4

Moisture Sensitivity Level (MSL):

1

No. of Functions:

1

No. of Terminals:

16

No. of Words:

16 words

No. of Words Code:

16

Operating Mode:

SYNCHRONOUS

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-55 Cel

Organization:

16X4

Output Enable:

YES

Package Body Material:

PLASTIC/EPOXY

Package Code:

SOP

Package Equivalence Code:

SOP16,.25

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Parallel or Serial:

PARALLEL

Peak Reflow Temperature (C):

260

Power Supplies (V):

2/6

Qualification:

Not Qualified

Maximum Seated Height:

1.75 mm

Sub-Category:

FIFOs

Maximum Supply Current:

.16 mA

Maximum Supply Voltage (Vsup):

6 V

Minimum Supply Voltage (Vsup):

2 V

Nominal Supply Voltage / Vsup (V):

4.5

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Finish:

NICKEL PALLADIUM GOLD

Terminal Form:

GULL WING

Terminal Pitch:

1.27 mm

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Width:

3.9 mm

Trade Compliance

CD74HC40105M96G4 Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.71

SB

8542.32.00.70

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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