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SN74ABT3611-20PQR

Texas Instruments

SN74ABT3611-20PQR by Texas Instruments

SN74ABT3611-20PQR by Texas Instruments is a FIFO with 64x36 organization, 20 ns cycle time, and 5V nominal voltage. It is used in applications requiring synchronous operation, such as data buffering and communication systems.

Median Price

-

Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 5,498 parts In-Stock

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5,498

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Digiode

USA . 1,566 parts In-Stock

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1,566

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Parana Technologies

USA . 1,847 parts In-Stock

1+ parts

$4.382

100+ parts

-

1k+ parts

$4.800

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1,847

$4.382

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$4.800

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DigiPath Technology Company

USA . 2,219 parts In-Stock

1+ parts

$4.826

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2,219

$4.826

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ChromeModa Solutions

Germany . 6,694 parts In-Stock

1+ parts

$4.924

100+ parts

$4.038

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6,694

$4.924

$4.038

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IDEA Electronic Components Group

UK . 1,043 parts In-Stock

1+ parts

$4.924

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$4.432

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1,043

$4.924

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$4.432

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AZTECH Wire

Italy . 783 parts In-Stock

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$7.552

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783

$7.552

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One Stop Electronics

USA . 222 parts In-Stock

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$25.000

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222

$25.000

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Corphita

USA . 2,211 parts In-Stock

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Overview

Experience the unmatched quality and reliability of Texas Instruments with the SN74ABT3611-20PQR. As a leading manufacturer in the industry, Texas Instruments delivers top-notch FIFO products that are essential for various applications. This FIFO package offers a fast cycle time of 20 ns and operates in synchronous mode, ensuring efficient performance. With a nominal supply voltage of 5V and 3-state output characteristics, this product provides exceptional value and benefits to customers looking for reliable memory solutions. Trust Texas Instruments for all your FIFO needs and experience the difference in quality today.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy material makes the product lightweight and durable, ideal for compact electronic devices.

Cycle Time: 20 ns

The quick cycle time of 20 ns ensures fast data processing and retrieval, making the product efficient in handling high-speed data.

Nominal Supply Voltage / Vsup (V): 5

The nominal supply voltage of 5V ensures compatibility with standard power sources, making the product easy to integrate into existing systems.

No. of Terminals: 132

With 132 terminals, the product allows for versatile connectivity options, enabling it to interface with multiple other components seamlessly.

Operating Mode: SYNCHRONOUS

The synchronous operating mode ensures precise coordination of data transfer, reducing the risk of errors and improving overall system performance.

Output Characteristics: 3-STATE

The 3-STATE output characteristics offer flexibility in controlling the output signal, allowing the product to support various data processing requirements.

Technology: BICMOS

The BICMOS technology combines the advantages of both bipolar and CMOS technologies, resulting in a product that offers high speed, low power consumption, and improved reliability.

Memory Width: 36

With a memory width of 36 bits, the product can store and manipulate large amounts of data efficiently, making it suitable for applications requiring extensive data processing.

Output Enable: YES

The output enable feature allows for the control of data output, enhancing the product's versatility and compatibility with various systems.

Maximum Access Time: 12 ns

The maximum access time of 12 ns ensures quick retrieval of data, making the product suitable for time-sensitive applications where fast response is critical.

Technical Specifications

FIFO SN74ABT3611-20PQR attributes and parameters. Explore more FIFO devices from Texas Instruments

Specs

Maximum Access Time:

12 ns

Additional Features:

PARITY GENERATOR/CHECKER; MAILBOX

Cycle Time:

20 ns

JESD-30 Code:

S-PQFP-G132

Length:

24.13 mm

Memory Density:

2304 bit

Memory Width:

36

No. of Functions:

1

No. of Terminals:

132

No. of Words:

64 words

No. of Words Code:

64

Operating Mode:

SYNCHRONOUS

Maximum Operating Temperature:

70 Cel

Minimum Operating Temperature:

0 Cel

Organization:

64X36

Output Characteristics:

3-STATE

Output Enable:

YES

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Shape:

Package Style (Meter):

FLATPACK, BUMPER

Parallel or Serial:

PARALLEL

Qualification:

Not Qualified

Maximum Seated Height:

4.57 mm

Maximum Supply Voltage (Vsup):

5.5 V

Minimum Supply Voltage (Vsup):

4.5 V

Nominal Supply Voltage / Vsup (V):

5

Surface Mount:

YES

Technology:

BICMOS

Temperature Grade:

Terminal Form:

GULL WING

Terminal Pitch:

.635 mm

Terminal Position:

QUAD

Width:

24.13 mm

Trade Compliance

SN74ABT3611-20PQR Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.71

SB

8542.32.00.70

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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