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SN74ACT7201LA-25DV

Texas Instruments

SN74ACT7201LA-25DV by Texas Instruments

SN74ACT7201LA-25DV by Texas Instruments is a FIFO with 512x9 organization, 35ns cycle time, and 28.5MHz max clock frequency. It operates asynchronously at 5V and is ideal for applications requiring fast data storage and retrieval in commercial temperature environments.

Median Price

-

Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 4,184 parts In-Stock

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Vyrian

USA . 3,991 parts In-Stock

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3,991

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Distributors (Availability)

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Parana Technologies

USA . 1,117 parts In-Stock

1+ parts

$4.928

100+ parts

-

1k+ parts

$5.462

10k+ parts

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1,117

$4.928

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$5.462

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DigiPath Technology Company

USA . 1,863 parts In-Stock

1+ parts

$5.426

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1,863

$5.426

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ChromeModa Solutions

Germany . 1,852 parts In-Stock

1+ parts

$5.537

100+ parts

$4.540

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1,852

$5.537

$4.540

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IDEA Electronic Components Group

UK . 662 parts In-Stock

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$5.537

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$4.983

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662

$5.537

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$4.983

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AZTECH Wire

Italy . 542 parts In-Stock

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$5.793

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542

$5.793

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One Stop Electronics

USA . 1,588 parts In-Stock

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$15.000

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1,588

$15.000

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Corphita

USA . 1,766 parts In-Stock

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Overview

Texas Instruments presents the SN74ACT7201LA-25DV, a high-quality FIFO memory IC designed to meet your demanding application needs. With Texas Instruments' reputation for excellence in technology and innovation, this product offers reliable performance and exceptional value. Ideal for applications requiring fast data access and storage, the SN74ACT7201LA-25DV provides seamless integration and optimal efficiency. Upgrade your system with this versatile FIFO memory IC and experience the benefits of superior performance and reliability. Trust Texas Instruments for cutting-edge solutions that exceed expectations.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Plastic and epoxy materials make the package durable and resistant to damage, ensuring the longevity of the product.

Cycle Time: 35 ns

The fast cycle time of 35 ns allows for quick and efficient data processing, making this FIFO a reliable choice for high-speed applications.

Nominal Supply Voltage / Vsup (V): 5

Operating at a standard supply voltage of 5V, this FIFO is compatible with most systems and provides stable performance.

Maximum Operating Temperature: 70 °C

With a maximum operating temperature of 70°C, this FIFO can withstand high heat environments without any issues.

Technology: CMOS

Using CMOS technology, this FIFO offers low power consumption and high noise immunity, making it efficient and reliable for various applications.

Technical Specifications

FIFO SN74ACT7201LA-25DV attributes and parameters. Explore more FIFO devices from Texas Instruments

Specs

Maximum Access Time:

25 ns

Additional Features:

RETRANSMIT

Maximum Clock Frequency (fCLK):

28.5 MHz

Cycle Time:

35 ns

JESD-30 Code:

R-PDSO-G28

JESD-609 Code:

e0

Length:

18.365 mm

Memory Density:

4608 bit

Memory IC Type:

Memory Width:

9

No. of Functions:

1

No. of Terminals:

28

No. of Words:

512 words

No. of Words Code:

512

Operating Mode:

ASYNCHRONOUS

Maximum Operating Temperature:

70 Cel

Minimum Operating Temperature:

0 Cel

Organization:

512X9

Output Characteristics:

3-STATE

Output Enable:

NO

Package Body Material:

PLASTIC/EPOXY

Package Code:

SOP

Package Equivalence Code:

SOP28,.45

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Parallel or Serial:

PARALLEL

Power Supplies (V):

5

Qualification:

Not Qualified

Maximum Seated Height:

3.05 mm

Maximum Standby Current:

.0005 Amp

Sub-Category:

FIFOs

Maximum Supply Current:

125 mA

Maximum Supply Voltage (Vsup):

5.5 V

Minimum Supply Voltage (Vsup):

4.5 V

Nominal Supply Voltage / Vsup (V):

5

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Finish:

TIN LEAD

Terminal Form:

GULL WING

Terminal Pitch:

1.27 mm

Terminal Position:

DUAL

Width:

8.765 mm

Trade Compliance

SN74ACT7201LA-25DV Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.71

SB

8542.32.00.70

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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