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5962-9650901QXA

Texas Instruments

5962-9650901QXA by Texas Instruments

The Texas Instruments 5962-9650901QXA is a MILITARY-grade FIFO memory IC with 512x18 organization, operating at 40 MHz clock frequency. It features a cycle time of 25 ns and can operate in synchronous mode. Ideal for applications requiring high-speed data storage and retrieval in harsh environments.

Median Price

-

Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 4,156 parts In-Stock

1+ parts

-

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4,156

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Vyrian

USA . 2,760 parts In-Stock

1+ parts

-

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2,760

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Parana Technologies

USA . 2,235 parts In-Stock

1+ parts

$3.643

100+ parts

-

1k+ parts

$4.152

10k+ parts

-

2,235

$3.643

-

$4.152

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ChromeModa Solutions

Germany . 4,570 parts In-Stock

1+ parts

$4.093

100+ parts

$3.356

1k+ parts

-

10k+ parts

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4,570

$4.093

$3.356

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IDEA Electronic Components Group

UK . 2,106 parts In-Stock

1+ parts

$4.093

100+ parts

-

1k+ parts

$3.684

10k+ parts

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2,106

$4.093

-

$3.684

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One Stop Electronics

USA . 812 parts In-Stock

1+ parts

$6.000

100+ parts

-

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812

$6.000

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AZTECH Wire

Italy . 584 parts In-Stock

1+ parts

$12.740

100+ parts

-

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584

$12.740

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Native Components

USA . 207 parts In-Stock

1+ parts

$124.958

100+ parts

-

1k+ parts

-

10k+ parts

$119.959

207

$124.958

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-

$119.959

Northwest PG Solutions

USA . 437 parts In-Stock

1+ parts

$137.453

100+ parts

-

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437

$137.453

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Corphita

USA . 4,402 parts In-Stock

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4,402

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DigiPath Technology Company

USA . 1,266 parts In-Stock

1+ parts

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100+ parts

$3.690

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1,266

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$3.690

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Overview

Unleash the power of seamless data transfer with the Texas Instruments 5962-9650901QXA FIFO memory. Crafted with precision using high-quality materials, this military-grade component ensures reliable performance in even the harshest conditions. Ideal for a wide range of applications, from aerospace to industrial automation, this synchronous FIFO memory offers blazing-fast cycle times and a generous memory density to optimize your system's efficiency. Experience unparalleled speed and accuracy with Texas Instruments - trust in innovation, trust in quality.

Feature Benefit Bullets

Package Body Material: CERAMIC, METAL-SEALED COFIRED

This material provides durability and reliability to the product, making it suitable for harsh environments.

Cycle Time: 25 ns

The fast cycle time ensures quick data processing and efficient operation.

Screening Level: MIL-PRF-38535 Class Q

This high screening level indicates that the product meets stringent military standards for quality and reliability.

Operating Mode: SYNCHRONOUS

Synchronous operation ensures that data transmission is synchronized, leading to smoother performance.

Maximum Operating Temperature: 125 °C

The high maximum operating temperature allows the product to function reliably even in extreme heat conditions.

Memory IC Type: BI-DIRECTIONAL FIFO

The bidirectional FIFO memory type is efficient for managing data in both directions, enhancing overall performance.

Technical Specifications

FIFO 5962-9650901QXA attributes and parameters. Explore more FIFO devices from Texas Instruments

Specs

Maximum Access Time:

18 ns

Maximum Clock Frequency (fCLK):

40 MHz

Cycle Time:

25 ns

JESD-30 Code:

S-CPGA-P84

Length:

29.464 mm

Memory Density:

9216 bit

Memory IC Type:

Memory Width:

18

No. of Functions:

1

No. of Terminals:

84

No. of Words:

512 words

No. of Words Code:

512

Operating Mode:

SYNCHRONOUS

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-55 Cel

Organization:

512X18

Output Enable:

YES

Package Body Material:

CERAMIC, METAL-SEALED COFIRED

Package Code:

PGA

Package Equivalence Code:

PGA84M,11X11

Package Shape:

Package Style (Meter):

GRID ARRAY

Parallel or Serial:

PARALLEL

Peak Reflow Temperature (C):

NOT SPECIFIED

Power Supplies (V):

5

Qualification:

Not Qualified

Screening Level:

MIL-PRF-38535 Class Q

Maximum Seated Height:

5.21 mm

Maximum Standby Current:

.015 Amp

Sub-Category:

FIFOs

Maximum Supply Voltage (Vsup):

5.5 V

Minimum Supply Voltage (Vsup):

4.5 V

Nominal Supply Voltage / Vsup (V):

5

Surface Mount:

NO

Technology:

BICMOS

Temperature Grade:

Terminal Form:

PIN/PEG

Terminal Pitch:

2.54 mm

Terminal Position:

PERPENDICULAR

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Width:

29.464 mm

Trade Compliance

5962-9650901QXA Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.71

SB

8542.32.00.70

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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