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SN74ABT3612-20PCBR

Texas Instruments

SN74ABT3612-20PCBR by Texas Instruments

SN74ABT3612-20PCBR by Texas Instruments is a FIFO with 64x36 organization, 20 ns cycle time, and 5V nominal voltage. It is used in applications requiring fast data transfer and storage, such as networking equipment and communication systems.

Median Price

-

Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 3,504 parts In-Stock

1+ parts

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3,504

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Digiode

USA . 3,386 parts In-Stock

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3,386

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Parana Technologies

USA . 83 parts In-Stock

1+ parts

$3.505

100+ parts

-

1k+ parts

$4.030

10k+ parts

-

83

$3.505

-

$4.030

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ChromeModa Solutions

Germany . 6,229 parts In-Stock

1+ parts

$3.938

100+ parts

$3.229

1k+ parts

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6,229

$3.938

$3.229

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IDEA Electronic Components Group

UK . 1,491 parts In-Stock

1+ parts

$3.938

100+ parts

-

1k+ parts

$3.544

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1,491

$3.938

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$3.544

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One Stop Electronics

USA . 170 parts In-Stock

1+ parts

$13.000

100+ parts

-

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170

$13.000

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AZTECH Wire

Italy . 368 parts In-Stock

1+ parts

$18.822

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368

$18.822

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DigiPath Technology Company

USA . 1,305 parts In-Stock

1+ parts

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100+ parts

$3.551

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1,305

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$3.551

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Corphita

USA . 847 parts In-Stock

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847

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Overview

Enhance your electronics projects with the Texas Instruments SN74ABT3612-20PCBR FIFO, a high-quality product designed for optimal performance. Texas Instruments, known for their reliability and innovation, delivers a top-tier FIFO that guarantees seamless operation in various applications. With a cycle time of 20 ns and synchronous operating mode, this FIFO offers speed and precision. Its 3-STATE output characteristics and 64x36 organization ensure efficient data transfer. Trust Texas Instruments to provide cutting-edge technology that exceeds expectations, making the SN74ABT3612-20PCBR a valuable addition to your toolkit.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Plastic/Epoxy material is durable and lightweight, making the product easy to handle and transport.

Nominal Supply Voltage / Vsup (V): 5

Operating at 5V ensures stable and reliable performance for the product.

Cycle Time: 20 ns

Fast cycle time of 20 ns ensures efficient data processing and retrieval.

Organization: 64X36

The organization of 64 words by 36 memory width allows for effective storage and retrieval of data.

Maximum Operating Temperature: 70 °C

With a maximum operating temperature of 70°C, the product can function reliably even under high heat conditions.

Output Characteristics: 3-STATE

3-STATE output characteristics allow for multiple devices to be connected without interference, enhancing overall system efficiency.

Technology: BICMOS

Using BICMOS technology ensures a balance of high speed and low power consumption for optimal performance.

Width: 14 mm

Compact width of 14 mm makes the product suitable for space-constrained applications.

Temperature Grade: COMMERCIAL

Commercial temperature grade indicates that the product is suitable for standard operating conditions in commercial environments.

Memory Density: 2304 bit

High memory density of 2304 bits allows for ample storage capacity for data-intensive applications.

Output Enable: YES

Output enable feature provides flexibility in controlling the product's output signal, enhancing its functionality.

Maximum Access Time: 12 ns

Fast maximum access time of 12 ns ensures quick retrieval of data when needed.

Technical Specifications

FIFO SN74ABT3612-20PCBR attributes and parameters. Explore more FIFO devices from Texas Instruments

Specs

Maximum Access Time:

12 ns

Additional Features:

PARITY GENERATOR/CHECKER; MAILBOX

Cycle Time:

20 ns

JESD-30 Code:

S-PQFP-G120

Length:

14 mm

Memory Density:

2304 bit

Memory Width:

36

No. of Functions:

1

No. of Terminals:

120

No. of Words:

64 words

No. of Words Code:

64

Operating Mode:

SYNCHRONOUS

Maximum Operating Temperature:

70 Cel

Minimum Operating Temperature:

0 Cel

Organization:

64X36

Output Characteristics:

3-STATE

Output Enable:

YES

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Shape:

Package Style (Meter):

FLATPACK, HEAT SINK/SLUG, LOW PROFILE, FINE PITCH

Parallel or Serial:

PARALLEL

Qualification:

Not Qualified

Maximum Seated Height:

1.6 mm

Maximum Supply Voltage (Vsup):

5.5 V

Minimum Supply Voltage (Vsup):

4.5 V

Nominal Supply Voltage / Vsup (V):

5

Surface Mount:

YES

Technology:

BICMOS

Temperature Grade:

Terminal Form:

GULL WING

Terminal Pitch:

.4 mm

Terminal Position:

QUAD

Width:

14 mm

Trade Compliance

SN74ABT3612-20PCBR Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.71

SB

8542.32.00.70

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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