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5962-8986305YA

Qp Semiconductor

5962-8986305YA by Qp Semiconductor

5962-8986305YA by Qp Semiconductor is a FIFO memory with a cycle time of 40 ns. It has an organization of 512X9 and a memory density of 4608 bit. This CMOS technology device operates in an asynchronous mode and is suitable for military applications.

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Vyrian

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Aztec Data Supply Inc.

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Advanced Electronics

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Overview

Experience the unmatched quality and performance of Qp Semiconductor's 5962-8986305YA FIFO. As a leader in semiconductor manufacturing, Qp Semiconductor brings decades of expertise and innovation to every product. The 5962-8986305YA offers lightning-fast cycle times and operates seamlessly in asynchronous mode. With its compact rectangular shape and versatile in-line package style, this FIFO is perfect for a wide range of applications. From military-grade temperature tolerance to a robust CMOS technology, our product exceeds expectations. Unlock the power of 512x9 organization and 512-word code, providing a memory density of 4608 bits. Trust Qp Semiconductor for unrivaled reliability, efficiency, and value.

Feature Benefit Bullets

Cycle Time: 40 ns

This fast cycle time ensures efficient and quick data access, making it suitable for high-speed data processing applications.

Package Shape: RECTANGULAR

The rectangular package shape allows for easy integration and placement within electronic systems.

Operating Mode: ASYNCHRONOUS

The asynchronous operating mode provides flexibility in data retrieval without being dependent on a clock signal, making it suitable for diverse applications.

Nominal Supply Voltage / Vsup (V): 5

The nominal supply voltage of 5V ensures stable and reliable operation of the product.

No. of Terminals: 28

The ample number of terminals allows for easy connectivity and interfacing with other components in a system.

Package Style (Meter): IN-LINE

The in-line package style offers a compact and space-saving design.

Maximum Operating Temperature: 125 °C

The high maximum operating temperature tolerance ensures the product can withstand harsh environmental conditions.

Organization: 512X9

The organization of 512x9 provides a good balance between storage capacity and data width, suitable for various applications.

Minimum Operating Temperature: -55 °C

The low minimum operating temperature tolerance allows for reliable operation even in cold environments.

Terminal Finish: TIN LEAD

The TIN LEAD terminal finish ensures good conductivity and solderability.

Terminal Position: DUAL

The dual terminal position offers flexibility in installation and connection options.

Minimum Supply Voltage (Vsup): 4.5 V

The minimum supply voltage requirement of 4.5V ensures the product can function even with slightly lower voltage inputs.

Temperature Grade: MILITARY

The military-grade temperature tolerance ensures reliable performance in demanding and rugged environments.

Technology: CMOS

The CMOS technology offers low power consumption and high noise immunity, making it energy-efficient and reliable.

Parallel or Serial: PARALLEL

The parallel data transfer mode allows for faster data access and transmission in comparison to serial communication methods.

Terminal Form: THROUGH-HOLE

The through-hole terminal form provides reliable mechanical strength and robustness for secure connections.

No. of Words: 512 words

The 512-word capacity provides ample storage for data processing and retrieval requirements.

Memory Width: 9

The memory width of 9 bits allows for efficient handling of data with a good balance between granularity and capacity.

No. of Words Code: 512

The 512-word code ensures compatibility and seamless integration with systems requiring specific memory configurations.

Maximum Supply Voltage (Vsup): 5.5 V

The maximum supply voltage tolerance of 5.5V provides a safety margin for voltage fluctuations and ensures reliable operation.

Memory Density: 4608 bit

The high memory density of 4608 bits offers ample storage capacity for data-intensive applications.

Maximum Access Time: 30 ns

The fast maximum access time of 30 ns ensures quick data retrieval and processing, contributing to high performance and efficiency.

Technical Specifications

FIFO 5962-8986305YA attributes and parameters. Explore more FIFO devices from Qp Semiconductor

Specs

Maximum Access Time:

30 ns

Cycle Time:

40 ns

JESD-30 Code:

R-XDIP-T28

JESD-609 Code:

e0

Memory Density:

4608 bit

Memory Width:

9

No. of Functions:

1

No. of Terminals:

28

No. of Words:

512 words

No. of Words Code:

512

Operating Mode:

ASYNCHRONOUS

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-55 Cel

Organization:

512X9

Output Enable:

NO

Package Body Material:

UNSPECIFIED

Package Code:

DIP

Package Shape:

Package Style (Meter):

IN-LINE

Parallel or Serial:

PARALLEL

Qualification:

Not Qualified

Maximum Supply Voltage (Vsup):

5.5 V

Minimum Supply Voltage (Vsup):

4.5 V

Nominal Supply Voltage / Vsup (V):

5

Surface Mount:

NO

Technology:

CMOS

Temperature Grade:

Terminal Finish:

TIN LEAD

Terminal Form:

THROUGH-HOLE

Terminal Position:

DUAL

Trade Compliance

5962-8986305YA Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.71

SB

8542.32.00.70

Manufacturer Highlights

Qp Semiconductor

P Semiconductor is a privately held California company incorporated in October 1985. QP Semiconductor was formed initially to provide semiconductor assembly, electrical test and qualification services to the military, aerospace and high reliability industries. The company has since evolved into a true fabless semiconductor company with a complete range of manufacturing capability by establishing product design and fab foundry relationships to complement its assembly, test and qualification capability. The products and services offered, focus on providing total parts solutions for DMS, (Diminished Manufacturing Sources) and EOL (End of Life) semiconductor components to the military, aerospace and high reliability markets. QP Semiconductor was acquired by British company e2v in October, 2008.

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