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SN74ACT3631-15PQR

Texas Instruments

SN74ACT3631-15PQR by Texas Instruments

SN74ACT3631-15PQR by Texas Instruments is a FIFO with 512x36 organization, operating at 15 ns cycle time. It features synchronous operation, 3-STATE output characteristics, and parallel interface. This device is commonly used in applications requiring fast data storage and retrieval with a memory density of 18432 bits.

Median Price

-

Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 8,475 parts In-Stock

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8,475

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Digiode

USA . 3,143 parts In-Stock

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3,143

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Distributors (Availability)

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Parana Technologies

USA . 1,323 parts In-Stock

1+ parts

$3.638

100+ parts

-

1k+ parts

$4.148

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1,323

$3.638

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$4.148

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ChromeModa Solutions

Germany . 6,695 parts In-Stock

1+ parts

$4.088

100+ parts

$3.352

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6,695

$4.088

$3.352

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IDEA Electronic Components Group

UK . 1,344 parts In-Stock

1+ parts

$4.088

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$3.679

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1,344

$4.088

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$3.679

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AZTECH Wire

Italy . 188 parts In-Stock

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$10.612

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188

$10.612

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One Stop Electronics

USA . 1,058 parts In-Stock

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$17.000

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1,058

$17.000

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Corphita

USA . 4,529 parts In-Stock

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4,529

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DigiPath Technology Company

USA . 182 parts In-Stock

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$3.686

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$3.686

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Overview

Enhance your electronic designs with the SN74ACT3631-15PQR from Texas Instruments, a top-of-the-line FIFO device that guarantees reliable performance and exceptional quality. With its 512x36 memory organization and 15 ns cycle time, this synchronous operating mode component is perfect for a wide range of applications. Whether you're working on telecommunications, industrial control, or embedded systems, this product offers unmatched value, benefits, and advantages to meet your specific needs. Trust in Texas Instruments for superior technology and innovation in every product they create.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the internal components of the FIFO, ensuring reliable performance over time.

Cycle Time: 15 ns

Fast data access and retrieval speed, making it suitable for high-speed data processing applications.

Operating Mode: SYNCHRONOUS

Synchronous operation ensures data is transferred at a consistent and controlled rate, minimizing the risk of errors.

Nominal Supply Voltage / Vsup (V): 5

Operates at a standard voltage level, making it compatible with most systems and reducing the need for additional voltage regulation.

No. of Terminals: 132

Sufficient number of terminals for connecting with other components and peripherals, enabling versatile integration into different systems.

Memory Density: 18432 bit

Offers a high memory density, allowing for storage of a large amount of data in a compact form factor.

Technical Specifications

FIFO SN74ACT3631-15PQR attributes and parameters. Explore more FIFO devices from Texas Instruments

Specs

Maximum Access Time:

11 ns

Additional Features:

MAILBOX

Cycle Time:

15 ns

JESD-30 Code:

S-PQFP-G132

Length:

24.13 mm

Memory Density:

18432 bit

Memory Width:

36

No. of Functions:

1

No. of Terminals:

132

No. of Words:

512 words

No. of Words Code:

512

Operating Mode:

SYNCHRONOUS

Maximum Operating Temperature:

70 Cel

Minimum Operating Temperature:

0 Cel

Organization:

512X36

Output Characteristics:

3-STATE

Output Enable:

YES

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Shape:

Package Style (Meter):

FLATPACK, BUMPER

Parallel or Serial:

PARALLEL

Qualification:

Not Qualified

Maximum Seated Height:

4.57 mm

Maximum Supply Voltage (Vsup):

5.5 V

Minimum Supply Voltage (Vsup):

4.5 V

Nominal Supply Voltage / Vsup (V):

5

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Form:

GULL WING

Terminal Pitch:

.635 mm

Terminal Position:

QUAD

Width:

24.13 mm

Trade Compliance

SN74ACT3631-15PQR Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.71

SB

8542.32.00.70

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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