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1M7805-15DLG4

Texas Instruments

1M7805-15DLG4 by Texas Instruments

1M7805-15DLG4 by Texas Instruments is a 256x18 FIFO with 67MHz clock frequency, operating at 5V. Ideal for commercial applications, it features synchronous operation and GULL WING terminals in a small outline package.

Median Price

-

Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 8,082 parts In-Stock

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Digiode

USA . 3,118 parts In-Stock

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3,118

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Native Components

USA . 813 parts In-Stock

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$1.490

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813

$1.490

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Northwest PG Solutions

USA . 1,198 parts In-Stock

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$1.639

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$1.639

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Parana Technologies

USA . 196 parts In-Stock

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$3.162

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$3.683

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196

$3.162

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$3.683

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DigiPath Technology Company

USA . 1,493 parts In-Stock

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$3.482

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$3.203

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1,493

$3.482

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ChromeModa Solutions

Germany . 6,769 parts In-Stock

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$3.553

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$2.913

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6,769

$3.553

$2.913

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IDEA Electronic Components Group

UK . 1,023 parts In-Stock

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$3.553

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$3.198

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$3.553

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AZTECH Wire

Italy . 805 parts In-Stock

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$6.379

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805

$6.379

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One Stop Electronics

USA . 1,602 parts In-Stock

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$26.000

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Corphita

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Overview

Experience seamless data handling with the Texas Instruments 1M7805-15DLG4 FIFO memory IC. Crafted with precision and expertise by Texas Instruments, this high-quality product offers unparalleled performance and reliability. Ideal for a wide range of applications, this FIFO memory IC ensures smooth operations and efficient data storage. Unlock the potential of your devices with the value and benefits that this product brings, providing you with a competitive edge in today's fast-paced market. Trust Texas Instruments to deliver excellence in every product, elevating your experience to the next level.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Plastic/Epoxy material provides durability and protection for the internal components of the FIFO, ensuring long-term reliability.

Operating Mode: SYNCHRONOUS

Synchronous operation allows for precise timing and coordination of data transfer, reducing the risk of data errors or loss.

Nominal Supply Voltage / Vsup (V): 5

Operating at a standard voltage of 5V ensures compatibility with a wide range of systems and devices.

Maximum Clock Frequency (fCLK): 67 MHz

High clock frequency of 67 MHz enables fast data processing and efficient operation of the FIFO.

Memory Density: 4608 bit

High memory density of 4608 bits allows for storing a large amount of data in the FIFO, making it suitable for various applications.

Output Enable: YES

Output enable feature provides flexibility in controlling data output from the FIFO, allowing for optimal data handling and processing.

Technical Specifications

FIFO 1M7805-15DLG4 attributes and parameters. Explore more FIFO devices from Texas Instruments

Specs

Maximum Access Time:

12 ns

Maximum Clock Frequency (fCLK):

67 MHz

JESD-30 Code:

R-PDSO-G56

JESD-609 Code:

e4

Length:

18.415 mm

Memory Density:

4608 bit

Memory IC Type:

Memory Width:

18

Moisture Sensitivity Level (MSL):

1

No. of Functions:

1

No. of Terminals:

56

No. of Words:

256 words

No. of Words Code:

256

Operating Mode:

SYNCHRONOUS

Maximum Operating Temperature:

70 Cel

Minimum Operating Temperature:

0 Cel

Organization:

256X18

Output Enable:

YES

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

SSOP56,.4

Package Shape:

Package Style (Meter):

SMALL OUTLINE, SHRINK PITCH

Parallel or Serial:

PARALLEL

Peak Reflow Temperature (C):

260

Power Supplies (V):

5

Qualification:

Not Qualified

Maximum Seated Height:

2.79 mm

Sub-Category:

FIFOs

Maximum Supply Current:

.4 mA

Maximum Supply Voltage (Vsup):

5.5 V

Minimum Supply Voltage (Vsup):

4.5 V

Nominal Supply Voltage / Vsup (V):

5

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Finish:

NICKEL PALLADIUM GOLD

Terminal Form:

GULL WING

Terminal Pitch:

.635 mm

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Width:

7.5 mm

Trade Compliance

1M7805-15DLG4 Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.71

SB

8542.32.00.70

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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