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SN74ABT3612-30PCBR

Texas Instruments

SN74ABT3612-30PCBR by Texas Instruments

SN74ABT3612-30PCBR by Texas Instruments is a FIFO with 64x36 organization, 30 ns cycle time, and 5V nominal voltage. It is used in applications requiring fast synchronous operation and 3-STATE output characteristics. Ideal for commercial temperature grade environments needing high memory density and low profile packaging.

Median Price

-

Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 6,531 parts In-Stock

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Digiode

USA . 1,508 parts In-Stock

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1,508

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One Stop Electronics

USA . 1,355 parts In-Stock

1+ parts

$4.000

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$4.000

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Parana Technologies

USA . 113 parts In-Stock

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$4.678

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$5.162

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113

$4.678

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$5.162

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ChromeModa Solutions

Germany . 6,406 parts In-Stock

1+ parts

$5.256

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$4.310

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6,406

$5.256

$4.310

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IDEA Electronic Components Group

UK . 1,087 parts In-Stock

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$5.256

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$4.730

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1,087

$5.256

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$4.730

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AZTECH Wire

Italy . 617 parts In-Stock

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$12.942

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617

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Corphita

USA . 4,546 parts In-Stock

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DigiPath Technology Company

USA . 556 parts In-Stock

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$4.739

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$4.739

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Overview

Elevate your electronics projects with the SN74ABT3612-30PCBR FIFO by Texas Instruments. Crafted with precision and expertise, this FIFO offers seamless synchronization and efficient data storage capabilities. Ideal for a wide range of applications, this device ensures reliable performance and high-speed data transfer. With a nominal supply voltage of 5V and a cycle time of just 30ns, the SN74ABT3612-30PCBR delivers superior functionality while maintaining a compact design. Experience unmatched quality and value with this cutting-edge product from Texas Instruments.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the internal components of the FIFO, ensuring long-term reliability.

Cycle Time: 30 ns

Fast operation speed allows for quick data retrieval and processing, making it suitable for high-performance applications.

Operating Mode: SYNCHRONOUS

Synchronous operation ensures data is processed at a consistent rate, reducing the risk of errors or data loss.

Nominal Supply Voltage / Vsup (V): 5

Works within a standard voltage range, ensuring compatibility with existing systems and power sources.

No. of Terminals: 120

Sufficient number of terminals for connecting to other components, enabling versatile integration into different electronic systems.

Maximum Seated Height: 1.6 mm

Compact design with low seated height allows for space-efficient installation in various electronic devices.

Technology: BICMOS

Utilizes BiCMOS technology for a combination of high-speed CMOS and low-power bipolar transistors, offering a balance of performance and energy efficiency.

Technical Specifications

FIFO SN74ABT3612-30PCBR attributes and parameters. Explore more FIFO devices from Texas Instruments

Specs

Maximum Access Time:

15 ns

Additional Features:

PARITY GENERATOR/CHECKER; MAILBOX

Cycle Time:

30 ns

JESD-30 Code:

S-PQFP-G120

Length:

14 mm

Memory Density:

2304 bit

Memory Width:

36

No. of Functions:

1

No. of Terminals:

120

No. of Words:

64 words

No. of Words Code:

64

Operating Mode:

SYNCHRONOUS

Maximum Operating Temperature:

70 Cel

Minimum Operating Temperature:

0 Cel

Organization:

64X36

Output Characteristics:

3-STATE

Output Enable:

YES

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Shape:

Package Style (Meter):

FLATPACK, HEAT SINK/SLUG, LOW PROFILE, FINE PITCH

Parallel or Serial:

PARALLEL

Qualification:

Not Qualified

Maximum Seated Height:

1.6 mm

Maximum Supply Voltage (Vsup):

5.5 V

Minimum Supply Voltage (Vsup):

4.5 V

Nominal Supply Voltage / Vsup (V):

5

Surface Mount:

YES

Technology:

BICMOS

Temperature Grade:

Terminal Form:

GULL WING

Terminal Pitch:

.4 mm

Terminal Position:

QUAD

Width:

14 mm

Trade Compliance

SN74ABT3612-30PCBR Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.71

SB

8542.32.00.70

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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