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SN74ACT7202LA-15RJR

Texas Instruments

SN74ACT7202LA-15RJR by Texas Instruments

SN74ACT7202LA-15RJR by Texas Instruments is a FIFO chip with 1KX9 organization, 25 ns cycle time, and 5V nominal voltage. It operates in asynchronous mode and has a memory width of 9 bits. This chip is commonly used in applications requiring fast data storage and retrieval in parallel processing systems.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

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Vyrian

USA . 7,660 parts In-Stock

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7,660

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Digiode

USA . 4,011 parts In-Stock

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4,011

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Distributors (Availability)

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Parana Technologies

USA . 1,048 parts In-Stock

1+ parts

$1.878

100+ parts

-

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$2.422

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1,048

$1.878

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$2.422

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DigiPath Technology Company

USA . 1,574 parts In-Stock

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$2.068

100+ parts

$1.902

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1,574

$2.068

$1.902

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ChromeModa Solutions

Germany . 5,448 parts In-Stock

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$2.110

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$1.730

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$2.110

$1.730

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IDEA Electronic Components Group

UK . 651 parts In-Stock

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$2.110

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$1.899

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651

$2.110

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$1.899

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One Stop Electronics

USA . 349 parts In-Stock

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$3.000

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349

$3.000

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AZTECH Wire

Italy . 829 parts In-Stock

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$10.196

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829

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Corphita

USA . 1,423 parts In-Stock

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Overview

Experience the seamless performance and reliability of the SN74ACT7202LA-15RJR by Texas Instruments, a leading manufacturer in the industry. This FIFO device offers unparalleled speed with a cycle time of just 25 ns, making it ideal for applications requiring high-speed data transfer. With a wide operating temperature range and 3-state output characteristics, this chip carrier package ensures optimal functionality in various environments. Trust Texas Instruments to deliver top-notch quality and performance with the SN74ACT7202LA-15RJR, providing you with the innovative solutions you need to stay ahead in today's competitive market.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material provides durability and protection for the components inside, making the product long-lasting and reliable.

Cycle Time: 25 ns

The fast cycle time ensures quick data processing and efficient operation of the FIFO, making it suitable for high-speed applications.

Operating Mode: ASYNCHRONOUS

The asynchronous operation allows for independent and flexible data transfer, making the FIFO compatible with various systems and protocols.

Nominal Supply Voltage: 5V

The standard supply voltage of 5V ensures compatibility with most electronic systems and components.

Memory Width: 9

The wide memory width of 9 bits allows the FIFO to store and process larger chunks of data efficiently.

Technology: CMOS

CMOS technology offers low power consumption and high noise immunity, making the FIFO energy-efficient and reliable in noisy environments.

Technical Specifications

FIFO SN74ACT7202LA-15RJR attributes and parameters. Explore more FIFO devices from Texas Instruments

Specs

Maximum Access Time:

15 ns

Additional Features:

RETRANSMIT

Cycle Time:

25 ns

JESD-30 Code:

R-PQCC-J32

Length:

13.995 mm

Memory Density:

9216 bit

Memory Width:

9

No. of Functions:

1

No. of Terminals:

32

No. of Words:

1024 words

No. of Words Code:

1K

Operating Mode:

ASYNCHRONOUS

Maximum Operating Temperature:

70 Cel

Minimum Operating Temperature:

0 Cel

Organization:

1KX9

Output Characteristics:

3-STATE

Output Enable:

NO

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Shape:

Package Style (Meter):

CHIP CARRIER

Parallel or Serial:

PARALLEL

Qualification:

Not Qualified

Maximum Seated Height:

3.56 mm

Maximum Supply Voltage (Vsup):

5.5 V

Minimum Supply Voltage (Vsup):

4.5 V

Nominal Supply Voltage / Vsup (V):

5

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Form:

J BEND

Terminal Pitch:

1.27 mm

Terminal Position:

QUAD

Width:

11.4554 mm

Trade Compliance

SN74ACT7202LA-15RJR Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.71

SB

8542.32.00.70

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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