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SN74ACT7206L-15DV

Texas Instruments

SN74ACT7206L-15DV by Texas Instruments

SN74ACT7206L-15DV by Texas Instruments is a 16Kx9 FIFO with 25ns cycle time, operating at 5V. It features a max clock frequency of 40MHz and offers 3-STATE output characteristics. Ideal for applications requiring fast data transfer and storage in commercial temperature environments.

Median Price

-

Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 4,105 parts In-Stock

1+ parts

-

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4,105

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Digiode

USA . 2,008 parts In-Stock

1+ parts

-

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2,008

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Parana Technologies

USA . 1,127 parts In-Stock

1+ parts

$2.947

100+ parts

-

1k+ parts

$3.447

10k+ parts

-

1,127

$2.947

-

$3.447

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DigiPath Technology Company

USA . 1,045 parts In-Stock

1+ parts

$3.245

100+ parts

$2.985

1k+ parts

-

10k+ parts

-

1,045

$3.245

$2.985

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ChromeModa Solutions

Germany . 4,922 parts In-Stock

1+ parts

$3.311

100+ parts

$2.715

1k+ parts

-

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4,922

$3.311

$2.715

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IDEA Electronic Components Group

UK . 460 parts In-Stock

1+ parts

$3.311

100+ parts

-

1k+ parts

$2.980

10k+ parts

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460

$3.311

-

$2.980

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AZTECH Wire

Italy . 322 parts In-Stock

1+ parts

$6.927

100+ parts

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322

$6.927

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One Stop Electronics

USA . 967 parts In-Stock

1+ parts

$9.000

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967

$9.000

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Corphita

USA . 3,025 parts In-Stock

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3,025

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Overview

Elevate your electronics projects with the high-quality SN74ACT7206L-15DV FIFO by Texas Instruments. Designed for optimal performance and reliability, this FIFO offers seamless data storage and retrieval in a compact and versatile package. Ideal for a wide range of applications, this product provides customers with the value and benefits they need to take their designs to the next level. Trust in Texas Instruments for superior technology that delivers exceptional results every time.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy material makes the product lightweight and durable, suitable for various applications.

Cycle Time: 25 ns

The fast cycle time of 25 ns ensures efficient operation and quick data access, enhancing overall performance.

Nominal Supply Voltage / Vsup (V): 5

The nominal supply voltage of 5V provides stable power to the product, ensuring reliable operation.

Maximum Clock Frequency (fCLK): 40 MHz

With a high maximum clock frequency of 40 MHz, the product can process data at a rapid pace, suitable for high-speed applications.

Memory IC Type: OTHER FIFO

The memory IC type of FIFO indicates that the product uses First-In-First-Out technology, which is efficient for data storage and retrieval in sequential order.

Technical Specifications

FIFO SN74ACT7206L-15DV attributes and parameters. Explore more FIFO devices from Texas Instruments

Specs

Maximum Access Time:

15 ns

Maximum Clock Frequency (fCLK):

40 MHz

Cycle Time:

25 ns

JESD-30 Code:

R-PDSO-G28

Length:

18.365 mm

Memory Density:

147456 bit

Memory IC Type:

Memory Width:

9

No. of Functions:

1

No. of Terminals:

28

No. of Words:

16384 words

No. of Words Code:

16K

Operating Mode:

ASYNCHRONOUS

Maximum Operating Temperature:

70 Cel

Minimum Operating Temperature:

0 Cel

Organization:

16KX9

Output Characteristics:

3-STATE

Output Enable:

NO

Package Body Material:

PLASTIC/EPOXY

Package Code:

SOP

Package Equivalence Code:

SOP28,.45

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Parallel or Serial:

PARALLEL

Peak Reflow Temperature (C):

NOT SPECIFIED

Power Supplies (V):

5

Qualification:

Not Qualified

Maximum Seated Height:

3.05 mm

Maximum Standby Current:

.002 Amp

Sub-Category:

FIFOs

Maximum Supply Current:

120 mA

Maximum Supply Voltage (Vsup):

5.5 V

Minimum Supply Voltage (Vsup):

4.5 V

Nominal Supply Voltage / Vsup (V):

5

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Form:

GULL WING

Terminal Pitch:

1.27 mm

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Width:

8.765 mm

Trade Compliance

SN74ACT7206L-15DV Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.71

SB

8542.32.00.70

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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