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SN74ACT3622-20PQR

Texas Instruments

SN74ACT3622-20PQR by Texas Instruments

SN74ACT3622-20PQR by Texas Instruments is a FIFO with 256x36 organization, operating at 20 ns cycle time. It features 3-STATE output characteristics and synchronous operation mode, suitable for applications requiring fast data transfer and storage in commercial temperature environments. With a package style of FLATPACK, BUMPER and GULL WING terminal form, it offers parallel data processing with a memory width of 36 bits.

Median Price

-

Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

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Digiode

USA . 4,728 parts In-Stock

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Vyrian

USA . 4,108 parts In-Stock

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4,108

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Parana Technologies

USA . 1,957 parts In-Stock

1+ parts

$4.794

100+ parts

-

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$5.302

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1,957

$4.794

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$5.302

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One Stop Electronics

USA . 969 parts In-Stock

1+ parts

$5.000

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-

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969

$5.000

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AZTECH Wire

Italy . 612 parts In-Stock

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$5.195

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612

$5.195

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DigiPath Technology Company

USA . 217 parts In-Stock

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$5.279

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$4.857

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217

$5.279

$4.857

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ChromeModa Solutions

Germany . 6,237 parts In-Stock

1+ parts

$5.387

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$4.417

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6,237

$5.387

$4.417

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IDEA Electronic Components Group

UK . 844 parts In-Stock

1+ parts

$5.387

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$4.848

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844

$5.387

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$4.848

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Corphita

USA . 4,075 parts In-Stock

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4,075

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Overview

Unleash the power of efficient data storage and retrieval with the SN74ACT3622-20PQR by Texas Instruments. As a leader in semiconductor technology, Texas Instruments delivers top-quality FIFO products like this one, designed for maximum performance and reliability. Ideal for a wide range of applications, from telecommunications to industrial automation, this FIFO device offers fast cycle times and synchronous operation, ensuring seamless data flow. Experience the value and benefits of this high-quality product, providing customers with a dependable solution for their data management needs.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy material makes the product lightweight and durable, ideal for portable electronic devices.

Cycle Time: 20 ns

With a fast cycle time of 20 ns, this FIFO ensures quick data access and transfer, improving overall system performance.

Nominal Supply Voltage / Vsup (V): 5

The 5V supply voltage ensures compatibility with standard power sources, making integration easier.

Organization: 256X36

The 256x36 organization allows for efficient data storage and retrieval, making this FIFO suitable for applications requiring large memory capacity.

Output Characteristics: 3-STATE

The 3-STATE output characteristics provide flexibility in controlling data output, allowing for more versatile usage scenarios.

Technical Specifications

FIFO SN74ACT3622-20PQR attributes and parameters. Explore more FIFO devices from Texas Instruments

Specs

Maximum Access Time:

13 ns

Additional Features:

MAILBOX

Cycle Time:

20 ns

JESD-30 Code:

S-PQFP-G132

Length:

24.13 mm

Memory Density:

9216 bit

Memory Width:

36

No. of Functions:

1

No. of Terminals:

132

No. of Words:

256 words

No. of Words Code:

256

Operating Mode:

SYNCHRONOUS

Maximum Operating Temperature:

70 Cel

Minimum Operating Temperature:

0 Cel

Organization:

256X36

Output Characteristics:

3-STATE

Output Enable:

YES

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Shape:

Package Style (Meter):

FLATPACK, BUMPER

Parallel or Serial:

PARALLEL

Qualification:

Not Qualified

Maximum Seated Height:

4.57 mm

Maximum Supply Voltage (Vsup):

5.5 V

Minimum Supply Voltage (Vsup):

4.5 V

Nominal Supply Voltage / Vsup (V):

5

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Form:

GULL WING

Terminal Pitch:

.635 mm

Terminal Position:

QUAD

Width:

24.13 mm

Trade Compliance

SN74ACT3622-20PQR Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.71

SB

8542.32.00.70

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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