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1M7804-20DLRG4

Texas Instruments

1M7804-20DLRG4 by Texas Instruments

1M7804-20DLRG4 by Texas Instruments is a 512x18 FIFO with synchronous operation, 50 MHz clock frequency, and 15 ns access time. Ideal for commercial applications requiring fast data storage and retrieval in a compact small outline package.

Median Price

-

Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 5,571 parts In-Stock

1+ parts

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5,571

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Digiode

USA . 2,013 parts In-Stock

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2,013

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Distributors (Availability)

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Parana Technologies

USA . 875 parts In-Stock

1+ parts

$2.215

100+ parts

-

1k+ parts

$2.721

10k+ parts

-

875

$2.215

-

$2.721

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DigiPath Technology Company

USA . 208 parts In-Stock

1+ parts

$2.439

100+ parts

$2.244

1k+ parts

-

10k+ parts

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208

$2.439

$2.244

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ChromeModa Solutions

Germany . 4,341 parts In-Stock

1+ parts

$2.489

100+ parts

$2.041

1k+ parts

-

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4,341

$2.489

$2.041

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IDEA Electronic Components Group

UK . 1,568 parts In-Stock

1+ parts

$2.489

100+ parts

-

1k+ parts

$2.240

10k+ parts

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1,568

$2.489

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$2.240

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One Stop Electronics

USA . 636 parts In-Stock

1+ parts

$13.000

100+ parts

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636

$13.000

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Ampacity Inc.

Singapore . 154 parts In-Stock

1+ parts

$13.000

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154

$13.000

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AZTECH Wire

Italy . 260 parts In-Stock

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$19.418

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260

$19.418

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Corphita

USA . 4,533 parts In-Stock

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4,533

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Native Components

USA . 652 parts In-Stock

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$3.492

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652

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$3.492

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Northwest PG Solutions

USA . 66 parts In-Stock

1+ parts

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100+ parts

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$3.528

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66

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$3.528

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Overview

Experience seamless data transfer and enhanced performance with the 1M7804-20DLRG4 by Texas Instruments. As a leading manufacturer in the industry, Texas Instruments guarantees top-notch quality and reliability. This FIFO device is perfect for a wide range of applications, offering customers a versatile solution for their needs. With a nominal supply voltage of 5V and a maximum clock frequency of 50 MHz, this product delivers exceptional value and efficiency. Upgrade your systems today with the innovative technology and superior design of the 1M7804-20DLRG4.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Plastic/Epoxy material provides durability and protection for the internal components of the FIFO, ensuring reliable performance over time.

Operating Mode: SYNCHRONOUS

Synchronous operation allows for precise timing and coordination within the FIFO, improving data integrity and transfer efficiency.

Maximum Clock Frequency (fCLK): 50 MHz

High clock frequency of 50 MHz enables fast data transfer rates, making this FIFO ideal for high-speed applications.

Memory Density: 9216 bit

With a high memory density of 9216 bits, this FIFO can store a large amount of data efficiently, making it suitable for handling complex data processing tasks.

Output Enable: YES

The output enable feature allows for flexible control over data output, enabling efficient management of data flow in the FIFO.

Technical Specifications

FIFO 1M7804-20DLRG4 attributes and parameters. Explore more FIFO devices from Texas Instruments

Specs

Maximum Access Time:

15 ns

Maximum Clock Frequency (fCLK):

50 MHz

JESD-30 Code:

R-PDSO-G56

JESD-609 Code:

e4

Length:

18.415 mm

Memory Density:

9216 bit

Memory IC Type:

Memory Width:

18

Moisture Sensitivity Level (MSL):

1

No. of Functions:

1

No. of Terminals:

56

No. of Words:

512 words

No. of Words Code:

512

Operating Mode:

SYNCHRONOUS

Maximum Operating Temperature:

70 Cel

Minimum Operating Temperature:

0 Cel

Organization:

512X18

Output Enable:

YES

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

SSOP56,.4

Package Shape:

Package Style (Meter):

SMALL OUTLINE, SHRINK PITCH

Parallel or Serial:

PARALLEL

Peak Reflow Temperature (C):

260

Power Supplies (V):

5

Qualification:

Not Qualified

Maximum Seated Height:

2.79 mm

Sub-Category:

FIFOs

Maximum Supply Current:

.4 mA

Maximum Supply Voltage (Vsup):

5.5 V

Minimum Supply Voltage (Vsup):

4.5 V

Nominal Supply Voltage / Vsup (V):

5

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Finish:

NICKEL PALLADIUM GOLD

Terminal Form:

GULL WING

Terminal Pitch:

.635 mm

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Width:

7.5 mm

Trade Compliance

1M7804-20DLRG4 Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.71

SB

8542.32.00.70

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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