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SN74ACT7203-40N

Texas Instruments

SN74ACT7203-40N by Texas Instruments

SN74ACT7203-40N by Texas Instruments is a 2Kx9 FIFO with 20MHz clock frequency, operating at 5V. It has a memory density of 18432 bits and can handle up to 0.01A standby current. Ideal for applications requiring fast data transfer and storage in commercial temperature environments.

Median Price

-

Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 5,475 parts In-Stock

1+ parts

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5,475

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Digiode

USA . 3,554 parts In-Stock

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3,554

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Parana Technologies

USA . 88 parts In-Stock

1+ parts

$3.863

100+ parts

-

1k+ parts

$4.347

10k+ parts

-

88

$3.863

-

$4.347

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IDEA Electronic Components Group

UK . 2,123 parts In-Stock

1+ parts

$4.340

100+ parts

-

1k+ parts

$3.906

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2,123

$4.340

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$3.906

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ChromeModa Solutions

Germany . 11 parts In-Stock

1+ parts

$4.340

100+ parts

$3.559

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-

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11

$4.340

$3.559

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AZTECH Wire

Italy . 695 parts In-Stock

1+ parts

$4.965

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695

$4.965

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One Stop Electronics

USA . 441 parts In-Stock

1+ parts

$6.000

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441

$6.000

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DigiPath Technology Company

USA . 2,178 parts In-Stock

1+ parts

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100+ parts

$3.913

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2,178

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$3.913

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Corphita

USA . 1,841 parts In-Stock

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1,841

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Overview

Elevate your projects with the SN74ACT7203-40N FIFO by Texas Instruments, a top-tier manufacturer known for delivering high-quality electronic components. This versatile FIFO device offers seamless data storage and retrieval capabilities in various applications, ensuring optimal performance and reliability. With a nominal supply voltage of 5V and a maximum clock frequency of 20 MHz, this FIFO module provides unmatched value and efficiency to customers looking for a reliable memory solution. Upgrade your system's memory management with the SN74ACT7203-40N and experience enhanced functionality like never before.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Durable and lightweight material that provides good protection for the internal components of the FIFO, making it suitable for various applications.

Operating Mode: ASYNCHRONOUS

Allows for independent control of read and write operations, providing flexibility in data transfer and ensuring seamless communication between devices.

Nominal Supply Voltage / Vsup (V): 5

Standard voltage requirement that is commonly available, ensuring easy compatibility with different systems and components.

Maximum Operating Temperature: 70 °C

Wide temperature range that allows the FIFO to operate effectively in various environmental conditions, increasing its versatility.

Maximum Clock Frequency (fCLK): 20 MHz

High clock frequency that enables fast data transfer and processing speeds, making the FIFO ideal for applications requiring quick response times.

Memory Density: 18432 bit

Large memory capacity that can store a significant amount of data, making the FIFO suitable for applications with high storage requirements.

Technical Specifications

FIFO SN74ACT7203-40N attributes and parameters. Explore more FIFO devices from Texas Instruments

Specs

Maximum Access Time:

40 ns

Maximum Clock Frequency (fCLK):

20 MHz

JESD-30 Code:

R-PDIP-T28

Memory Density:

18432 bit

Memory IC Type:

Memory Width:

9

No. of Terminals:

28

No. of Words:

2048 words

No. of Words Code:

2K

Operating Mode:

ASYNCHRONOUS

Maximum Operating Temperature:

70 Cel

Minimum Operating Temperature:

0 Cel

Organization:

2KX9

Package Body Material:

PLASTIC/EPOXY

Package Code:

DIP

Package Equivalence Code:

DIP28,.3

Package Shape:

Package Style (Meter):

IN-LINE

Peak Reflow Temperature (C):

NOT SPECIFIED

Power Supplies (V):

5

Qualification:

Not Qualified

Maximum Standby Current:

.01 Amp

Sub-Category:

FIFOs

Maximum Supply Current:

95 mA

Nominal Supply Voltage / Vsup (V):

5

Surface Mount:

NO

Technology:

CMOS

Temperature Grade:

Terminal Form:

THROUGH-HOLE

Terminal Pitch:

2.54 mm

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Trade Compliance

SN74ACT7203-40N Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.71

SB

8542.32.00.70

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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