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SN74ACT7201A-50N

Texas Instruments

SN74ACT7201A-50N by Texas Instruments

SN74ACT7201A-50N by Texas Instruments is a FIFO with 512x9 organization, 65ns cycle time, and 15MHz clock frequency. It operates synchronously at 5V and has a temperature range of 0-70°C. Ideal for applications requiring fast data storage and retrieval in commercial-grade environments.

Median Price

-

Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 8,590 parts In-Stock

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8,590

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Digiode

USA . 2,513 parts In-Stock

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2,513

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Distributors (Availability)

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Parana Technologies

USA . 743 parts In-Stock

1+ parts

$2.394

100+ parts

-

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$2.892

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743

$2.394

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$2.892

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DigiPath Technology Company

USA . 787 parts In-Stock

1+ parts

$2.636

100+ parts

$2.425

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787

$2.636

$2.425

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ChromeModa Solutions

Germany . 5,263 parts In-Stock

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$2.690

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$2.206

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$2.690

$2.206

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IDEA Electronic Components Group

UK . 896 parts In-Stock

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$2.690

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$2.421

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896

$2.690

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One Stop Electronics

USA . 1,208 parts In-Stock

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$19.000

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$19.000

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AZTECH Wire

Italy . 816 parts In-Stock

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$19.866

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$19.866

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Corphita

USA . 459 parts In-Stock

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Overview

Experience seamless data transfer and efficient storage with the SN74ACT7201A-50N FIFO memory chip from Texas Instruments. As a leading manufacturer in the industry, Texas Instruments ensures top-notch quality and reliability in all their products. Ideal for a wide range of applications, this FIFO chip offers unparalleled value by providing fast access times, low power consumption, and a wide operating temperature range. Upgrade your system with the SN74ACT7201A-50N and enjoy the benefits of superior performance and robust design that only Texas Instruments can deliver.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection to the internal components of the FIFO, ensuring a longer lifespan.

Cycle Time: 65 ns

Fast cycle time allows for quick access and retrieval of data, increasing overall efficiency.

Nominal Supply Voltage / Vsup (V): 5

Standard supply voltage ensures compatibility with most electronic systems and devices.

Maximum Operating Temperature: 70 °C

Wide operating temperature range makes the FIFO suitable for various environments and applications.

Technology: CMOS

CMOS technology provides low power consumption and high noise immunity, making the FIFO energy-efficient and reliable.

No. of Words: 512 words

Large capacity allows for storage of a significant amount of data, making the FIFO versatile and scalable.

Memory Width: 9

High memory width enables efficient data transfer and processing, improving overall performance.

Technical Specifications

FIFO SN74ACT7201A-50N attributes and parameters. Explore more FIFO devices from Texas Instruments

Specs

Maximum Access Time:

50 ns

Additional Features:

RETRANSMIT

Maximum Clock Frequency (fCLK):

15 MHz

Cycle Time:

65 ns

JESD-30 Code:

R-PDIP-T28

Length:

36.32 mm

Memory Density:

4608 bit

Memory IC Type:

Memory Width:

9

No. of Functions:

1

No. of Terminals:

28

No. of Words:

512 words

No. of Words Code:

512

Operating Mode:

SYNCHRONOUS

Maximum Operating Temperature:

70 Cel

Minimum Operating Temperature:

0 Cel

Organization:

512X9

Output Characteristics:

3-STATE

Output Enable:

NO

Package Body Material:

PLASTIC/EPOXY

Package Code:

DIP

Package Equivalence Code:

DIP28,.6

Package Shape:

Package Style (Meter):

IN-LINE

Parallel or Serial:

PARALLEL

Power Supplies (V):

5

Qualification:

Not Qualified

Maximum Seated Height:

5.08 mm

Maximum Standby Current:

.008 Amp

Sub-Category:

FIFOs

Maximum Supply Current:

80 mA

Maximum Supply Voltage (Vsup):

5.5 V

Minimum Supply Voltage (Vsup):

4.5 V

Nominal Supply Voltage / Vsup (V):

5

Surface Mount:

NO

Technology:

CMOS

Temperature Grade:

Terminal Form:

THROUGH-HOLE

Terminal Pitch:

2.54 mm

Terminal Position:

DUAL

Width:

15.24 mm

Trade Compliance

SN74ACT7201A-50N Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.71

SB

8542.32.00.70

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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