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SN74ACT2235-30PAGR

Texas Instruments

SN74ACT2235-30PAGR by Texas Instruments

SN74ACT2235-30PAGR by Texas Instruments is a FIFO with 1KX9 organization, 30 ns cycle time, and 3-STATE output characteristics. It operates at 5V with a temperature range of 0-70 °C and is suitable for parallel applications requiring fast access times.

Median Price

-

Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

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Digiode

USA . 3,296 parts In-Stock

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Vyrian

USA . 2,679 parts In-Stock

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2,679

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Distributors (Availability)

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Parana Technologies

USA . 2,257 parts In-Stock

1+ parts

$4.538

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$4.984

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2,257

$4.538

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$4.984

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DigiPath Technology Company

USA . 878 parts In-Stock

1+ parts

$4.997

100+ parts

$4.597

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878

$4.997

$4.597

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ChromeModa Solutions

Germany . 2,241 parts In-Stock

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$5.099

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$4.181

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$5.099

$4.181

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IDEA Electronic Components Group

UK . 1,116 parts In-Stock

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$5.099

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$4.589

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One Stop Electronics

USA . 395 parts In-Stock

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$15.000

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395

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AZTECH Wire

Italy . 484 parts In-Stock

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$18.743

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Corphita

USA . 3,051 parts In-Stock

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Overview

Experience seamless data transfer and reliable performance with the SN74ACT2235-30PAGR FIFO by Texas Instruments. As a leading manufacturer in the industry, Texas Instruments ensures top-notch quality and innovation. This FIFO device is perfect for a wide range of applications, offering fast cycle times and low power consumption. With a 1Kx9 organization and 1024 words capacity, this FIFO provides efficient parallel data transfer. Trust in Texas Instruments for cutting-edge technology and enhance your product's performance today.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Plastic/Epoxy material provides durability and protection to the internal components of the FIFO, making it suitable for various environments.

Cycle Time: 30 ns

With a fast cycle time of 30 ns, this FIFO can efficiently handle data transfers and ensure smooth operation in high-speed applications.

Operating Mode: ASYNCHRONOUS

The asynchronous operation mode allows for flexible and independent data transfers within the FIFO, providing versatility in different system configurations.

Nominal Supply Voltage: 5V

Operating at a nominal supply voltage of 5V ensures compatibility with standard power sources and simplifies integration into existing systems.

Memory Width: 9

The 9-bit memory width of this FIFO allows for efficient storage and retrieval of data, making it suitable for a wide range of applications requiring data buffering.

Technology: CMOS

Utilizing CMOS technology ensures low power consumption and high noise immunity, enhancing the overall performance and reliability of the FIFO.

Technical Specifications

FIFO SN74ACT2235-30PAGR attributes and parameters. Explore more FIFO devices from Texas Instruments

Specs

Maximum Access Time:

25 ns

Additional Features:

BYPASS-XCVR

Cycle Time:

30 ns

JESD-30 Code:

S-PQFP-G64

Length:

10 mm

Memory Density:

9216 bit

Memory Width:

9

No. of Functions:

1

No. of Terminals:

64

No. of Words:

1024 words

No. of Words Code:

1K

Operating Mode:

ASYNCHRONOUS

Maximum Operating Temperature:

70 Cel

Minimum Operating Temperature:

0 Cel

Organization:

1KX9

Output Characteristics:

3-STATE

Output Enable:

YES

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Shape:

Package Style (Meter):

FLATPACK, THIN PROFILE, FINE PITCH

Parallel or Serial:

PARALLEL

Qualification:

Not Qualified

Maximum Seated Height:

1.2 mm

Maximum Supply Voltage (Vsup):

5.5 V

Minimum Supply Voltage (Vsup):

4.5 V

Nominal Supply Voltage / Vsup (V):

5

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Form:

GULL WING

Terminal Pitch:

.5 mm

Terminal Position:

QUAD

Width:

10 mm

Trade Compliance

SN74ACT2235-30PAGR Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.71

SB

8542.32.00.70

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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