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SN74ACT7206L-25RJR

Texas Instruments

SN74ACT7206L-25RJR by Texas Instruments

SN74ACT7206L-25RJR by Texas Instruments is a 16Kx9 FIFO chip with a cycle time of 35ns, operating at 5V. It features an asynchronous mode, 3-STATE output characteristics, and parallel organization. This CMOS technology device is ideal for applications requiring fast data storage and retrieval in commercial temperature environments.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

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Vyrian

USA . 3,207 parts In-Stock

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Digiode

USA . 1,628 parts In-Stock

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Distributors (Availability)

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Parana Technologies

USA . 1,111 parts In-Stock

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$3.947

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$4.419

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$4.419

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DigiPath Technology Company

USA . 1,592 parts In-Stock

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$4.346

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$3.999

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ChromeModa Solutions

Germany . 5,814 parts In-Stock

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$4.435

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$3.637

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$4.435

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IDEA Electronic Components Group

UK . 1,172 parts In-Stock

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$4.435

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$3.992

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One Stop Electronics

USA . 937 parts In-Stock

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$9.000

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937

$9.000

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AZTECH Wire

Italy . 796 parts In-Stock

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$9.685

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Corphita

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Overview

Maximize the efficiency and reliability of your systems with the SN74ACT7206L-25RJR FIFO by Texas Instruments. Crafted with precision and expertise, this chip carrier package offers seamless operation in asynchronous mode with a fast cycle time of 35 ns. Perfect for a wide range of applications, from data buffering to digital signal processing, this commercial-grade device ensures top-notch performance and smooth data flow. Upgrade your technology today and experience the superior quality and value that only Texas Instruments can deliver.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material provides durability and protects the internal components of the FIFO, ensuring reliable operation in various environments.

Cycle Time: 35 ns

The fast cycle time of 35 ns allows for quick access and retrieval of data, making the FIFO suitable for high-speed applications.

Nominal Supply Voltage / Vsup (V): 5

Operating at a nominal supply voltage of 5V ensures compatibility with standard electronic systems and power sources.

Memory Width: 9

The memory width of 9 bits per word provides sufficient capacity for storing and transferring data efficiently.

Technology: CMOS

The CMOS technology used in the FIFO offers low power consumption and high noise immunity, contributing to energy efficiency and reliable performance.

Maximum Access Time: 25 ns

With a maximum access time of 25 ns, the FIFO enables quick data retrieval and efficient operation in time-sensitive applications.

Technical Specifications

FIFO SN74ACT7206L-25RJR attributes and parameters. Explore more FIFO devices from Texas Instruments

Specs

Maximum Access Time:

25 ns

Cycle Time:

35 ns

JESD-30 Code:

R-PQCC-J32

Length:

13.995 mm

Memory Density:

147456 bit

Memory Width:

9

No. of Functions:

1

No. of Terminals:

32

No. of Words:

16384 words

No. of Words Code:

16K

Operating Mode:

ASYNCHRONOUS

Maximum Operating Temperature:

70 Cel

Minimum Operating Temperature:

0 Cel

Organization:

16KX9

Output Characteristics:

3-STATE

Output Enable:

NO

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Shape:

Package Style (Meter):

CHIP CARRIER

Parallel or Serial:

PARALLEL

Qualification:

Not Qualified

Maximum Seated Height:

3.56 mm

Maximum Supply Voltage (Vsup):

5.5 V

Minimum Supply Voltage (Vsup):

4.5 V

Nominal Supply Voltage / Vsup (V):

5

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Form:

J BEND

Terminal Pitch:

1.27 mm

Terminal Position:

QUAD

Width:

11.4554 mm

Trade Compliance

SN74ACT7206L-25RJR Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.71

SB

8542.32.00.70

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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