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SN74ABT7819-15PN

Texas Instruments

SN74ABT7819-15PN by Texas Instruments

SN74ABT7819-15PN by Texas Instruments is a FIFO memory with 512x18 organization, operating at 67 MHz clock frequency. It features 3-STATE output characteristics and synchronous operation mode. Ideal for applications requiring fast data storage and retrieval in commercial temperature environments.

Median Price

-

Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 6,375 parts In-Stock

1+ parts

-

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6,375

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Digiode

USA . 321 parts In-Stock

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-

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321

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Parana Technologies

USA . 1,128 parts In-Stock

1+ parts

$2.387

100+ parts

-

1k+ parts

$2.885

10k+ parts

-

1,128

$2.387

-

$2.885

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IDEA Electronic Components Group

UK . 738 parts In-Stock

1+ parts

$2.682

100+ parts

-

1k+ parts

$2.414

10k+ parts

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738

$2.682

-

$2.414

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ChromeModa Solutions

Germany . 489 parts In-Stock

1+ parts

$2.682

100+ parts

$2.199

1k+ parts

-

10k+ parts

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489

$2.682

$2.199

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AZTECH Wire

Italy . 385 parts In-Stock

1+ parts

$11.249

100+ parts

-

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385

$11.249

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Ampacity Inc.

Singapore . 985 parts In-Stock

1+ parts

$19.000

100+ parts

-

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985

$19.000

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One Stop Electronics

USA . 388 parts In-Stock

1+ parts

$24.000

100+ parts

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388

$24.000

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DigiPath Technology Company

USA . 798 parts In-Stock

1+ parts

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100+ parts

$2.418

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798

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$2.418

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Corphita

USA . 302 parts In-Stock

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302

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Overview

Enhance your electronic projects with the SN74ABT7819-15PN by Texas Instruments, a high-quality FIFO memory IC that offers reliable performance and versatility. Designed with precision and expertise, Texas Instruments ensures top-notch manufacturing standards in every product. This FIFO memory is perfect for applications requiring fast and efficient data storage and retrieval, making it an essential component for your next project. With its 512X18 organization and 67 MHz maximum clock frequency, this FIFO memory provides exceptional value, benefits, and advantages to customers looking for a dependable solution. Upgrade your designs with the SN74ABT7819-15PN and experience the difference today!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the internal components of the FIFO, ensuring long-term reliability.

Cycle Time: 14.92 ns

Fast cycle time allows for quick data retrieval and processing, making this FIFO efficient for high-speed applications.

Nominal Supply Voltage / Vsup (V): 5

Standard 5V supply voltage ensures compatibility with common power sources, making integration easier.

Maximum Clock Frequency (fCLK): 67 MHz

High clock frequency allows for rapid data transfer and performance, suitable for demanding tasks.

Memory IC Type: BI-DIRECTIONAL FIFO

Bi-directional FIFO design enables simultaneous read and write operations, enhancing overall data processing capabilities.

Technical Specifications

FIFO SN74ABT7819-15PN attributes and parameters. Explore more FIFO devices from Texas Instruments

Specs

Maximum Access Time:

10 ns

Maximum Clock Frequency (fCLK):

67 MHz

Cycle Time:

14.92 ns

JESD-30 Code:

S-PQFP-G80

Length:

12 mm

Memory Density:

9216 bit

Memory IC Type:

Memory Width:

18

No. of Functions:

1

No. of Terminals:

80

No. of Words:

512 words

No. of Words Code:

512

Operating Mode:

SYNCHRONOUS

Maximum Operating Temperature:

70 Cel

Minimum Operating Temperature:

0 Cel

Organization:

512X18

Output Characteristics:

3-STATE

Output Enable:

YES

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

QFP80,.55SQ,20

Package Shape:

Package Style (Meter):

FLATPACK, LOW PROFILE, FINE PITCH

Parallel or Serial:

PARALLEL

Peak Reflow Temperature (C):

NOT SPECIFIED

Power Supplies (V):

5

Qualification:

Not Qualified

Maximum Seated Height:

1.6 mm

Sub-Category:

FIFOs

Maximum Supply Current:

95 mA

Maximum Supply Voltage (Vsup):

5.5 V

Minimum Supply Voltage (Vsup):

4.5 V

Nominal Supply Voltage / Vsup (V):

5

Surface Mount:

YES

Technology:

BICMOS

Temperature Grade:

Terminal Form:

GULL WING

Terminal Pitch:

.5 mm

Terminal Position:

QUAD

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Width:

12 mm

Trade Compliance

SN74ABT7819-15PN Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.71

SB

8542.32.00.70

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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