Loading...

SN74ACT53861PZ

Texas Instruments

SN74ACT53861PZ by Texas Instruments

SN74ACT53861PZ by Texas Instruments is a FIFO memory IC with 4Kx18 organization, operating at 50 MHz with a cycle time of 20 ns. It features synchronous operation, 3-STATE output characteristics, and parallel interface. This device is ideal for applications requiring fast data storage and retrieval in commercial temperature environments.

Median Price

-

Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 2,066 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

2,066

-

-

-

-

Digiode

USA . 1,170 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

1,170

-

-

-

-

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Parana Technologies

USA . 179 parts In-Stock

1+ parts

$4.614

100+ parts

-

1k+ parts

$5.083

10k+ parts

-

179

$4.614

-

$5.083

-

DigiPath Technology Company

USA . 2,298 parts In-Stock

1+ parts

$5.080

100+ parts

-

1k+ parts

-

10k+ parts

-

2,298

$5.080

-

-

-

IDEA Electronic Components Group

UK . 1,474 parts In-Stock

1+ parts

$5.184

100+ parts

-

1k+ parts

$4.666

10k+ parts

-

1,474

$5.184

-

$4.666

-

ChromeModa Solutions

Germany . 1,145 parts In-Stock

1+ parts

$5.184

100+ parts

$4.251

1k+ parts

-

10k+ parts

-

1,145

$5.184

$4.251

-

-

AZTECH Wire

Italy . 895 parts In-Stock

1+ parts

$7.380

100+ parts

-

1k+ parts

-

10k+ parts

-

895

$7.380

-

-

-

One Stop Electronics

USA . 216 parts In-Stock

1+ parts

$9.000

100+ parts

-

1k+ parts

-

10k+ parts

-

216

$9.000

-

-

-

Corphita

USA . 2,363 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

2,363

-

-

-

-

Overview

Elevate your electronics projects with the SN74ACT53861PZ by Texas Instruments, a top-tier manufacturer known for its superior quality and reliability. This FIFO device offers seamless data transfer with a fast cycle time of 20 ns, making it ideal for applications requiring high-speed operation. With a wide operating voltage range and a compact flatpack design, this product provides unmatched value and versatility for your designs. Upgrade your projects today with the SN74ACT53861PZ and experience the benefits of cutting-edge technology at your fingertips.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy as the package body material makes the product lightweight and durable, ideal for electronic applications.

Cycle Time: 20 ns

The fast cycle time of 20 ns ensures quick and efficient operation, making the product suitable for high-speed data processing.

Nominal Supply Voltage / Vsup: 5V

The nominal supply voltage of 5V provides stable and reliable power to the product, ensuring consistent performance.

Maximum Clock Frequency (fCLK): 50 MHz

With a maximum clock frequency of 50 MHz, this product can handle high-speed data transfer and processing efficiently.

Technology: CMOS

The CMOS technology used in this product offers low power consumption and high noise immunity, making it energy-efficient and reliable.

Technical Specifications

FIFO SN74ACT53861PZ attributes and parameters. Explore more FIFO devices from Texas Instruments

Specs

Maximum Access Time:

20 ns

Maximum Clock Frequency (fCLK):

50 MHz

Cycle Time:

20 ns

JESD-30 Code:

S-PQFP-G100

Length:

14 mm

Memory Density:

73728 bit

Memory IC Type:

Memory Width:

18

No. of Functions:

1

No. of Terminals:

100

No. of Words:

4096 words

No. of Words Code:

4K

Operating Mode:

SYNCHRONOUS

Maximum Operating Temperature:

70 Cel

Minimum Operating Temperature:

0 Cel

Organization:

4KX18

Output Characteristics:

3-STATE

Output Enable:

YES

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

QFP100,.63SQ,20

Package Shape:

Package Style (Meter):

FLATPACK, LOW PROFILE, FINE PITCH

Parallel or Serial:

PARALLEL

Peak Reflow Temperature (C):

NOT SPECIFIED

Power Supplies (V):

5

Qualification:

Not Qualified

Maximum Seated Height:

1.6 mm

Sub-Category:

FIFOs

Maximum Supply Current:

.4 mA

Maximum Supply Voltage (Vsup):

5.5 V

Minimum Supply Voltage (Vsup):

4.5 V

Nominal Supply Voltage / Vsup (V):

5

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Form:

GULL WING

Terminal Pitch:

.5 mm

Terminal Position:

QUAD

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Width:

14 mm

Trade Compliance

SN74ACT53861PZ Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.71

SB

8542.32.00.70

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

Category top products 20

Authentic purchasing experiences

Partstack™ will investigate all reported instances of potential suspect/counterfeit part listings.

New products
from Texas Instruments 7

Similar products 20