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SN74ACT7204-40FM

Texas Instruments

SN74ACT7204-40FM by Texas Instruments

SN74ACT7204-40FM by Texas Instruments is a FIFO chip with 4Kx9 organization, operating at 20MHz. It has a memory density of 36864 bits and operates on a 5V supply. This CMOS technology chip is ideal for applications requiring fast data transfer and storage in commercial temperature environments.

Median Price

-

Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 7,625 parts In-Stock

1+ parts

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7,625

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Digiode

USA . 2,204 parts In-Stock

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2,204

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Distributors (Availability)

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One Stop Electronics

USA . 1,463 parts In-Stock

1+ parts

$1.000

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1,463

$1.000

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Parana Technologies

USA . 2,200 parts In-Stock

1+ parts

$3.860

100+ parts

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$4.344

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2,200

$3.860

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$4.344

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DigiPath Technology Company

USA . 2,374 parts In-Stock

1+ parts

$4.250

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2,374

$4.250

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ChromeModa Solutions

Germany . 457 parts In-Stock

1+ parts

$4.337

100+ parts

$3.556

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457

$4.337

$3.556

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IDEA Electronic Components Group

UK . 116 parts In-Stock

1+ parts

$4.337

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$3.903

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116

$4.337

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$3.903

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AZTECH Wire

Italy . 801 parts In-Stock

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$18.120

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801

$18.120

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Corphita

USA . 3,757 parts In-Stock

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3,757

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Overview

Unlock seamless data transfer and efficient memory management with the SN74ACT7204-40FM FIFO by Texas Instruments. Known for their top-notch quality and reliability, Texas Instruments delivers cutting-edge solutions for a wide range of applications. With its compact chip carrier package and asynchronous operating mode, this FIFO device ensures smooth operation at a maximum clock frequency of 20 MHz. Perfect for commercial-grade projects, this memory IC boasts a memory density of 36864 bits, a nominal supply voltage of 5V, and a lightning-fast maximum access time of just 40 ns. Trust Texas Instruments to power your next project with superior performance and unmatched value.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy material makes the product lightweight and durable, ideal for portable or rugged applications.

Surface Mount: YES

Being surface mountable makes installation easier and allows for efficient use of PCB space.

Package Shape: RECTANGULAR

Rectangular shape allows for easy integration into existing circuit designs.

Operating Mode: ASYNCHRONOUS

Asynchronous operation allows for flexible data transfer without strict timing requirements.

Nominal Supply Voltage / Vsup (V): 5

Operating at a common 5V supply voltage makes integration with other components convenient.

Maximum Operating Temperature: 70 °C

High maximum operating temperature ensures reliability in various environmental conditions.

No. of Words: 4096 words

Large memory capacity of 4096 words provides ample storage for data buffering.

Maximum Clock Frequency (fCLK): 20 MHz

High clock frequency allows for fast data transfer rates, suitable for applications requiring real-time processing.

Technology: CMOS

CMOS technology offers low power consumption and high noise immunity, enhancing overall performance.

Technical Specifications

FIFO SN74ACT7204-40FM attributes and parameters. Explore more FIFO devices from Texas Instruments

Specs

Maximum Access Time:

40 ns

Maximum Clock Frequency (fCLK):

20 MHz

JESD-30 Code:

R-PQCC-J32

Memory Density:

36864 bit

Memory IC Type:

Memory Width:

9

No. of Terminals:

32

No. of Words:

4096 words

No. of Words Code:

4K

Operating Mode:

ASYNCHRONOUS

Maximum Operating Temperature:

70 Cel

Minimum Operating Temperature:

0 Cel

Organization:

4KX9

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

LDCC32,.5X.6

Package Shape:

Package Style (Meter):

CHIP CARRIER

Peak Reflow Temperature (C):

NOT SPECIFIED

Power Supplies (V):

5

Qualification:

Not Qualified

Maximum Standby Current:

.01 Amp

Sub-Category:

FIFOs

Maximum Supply Current:

95 mA

Nominal Supply Voltage / Vsup (V):

5

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Form:

J BEND

Terminal Pitch:

1.27 mm

Terminal Position:

QUAD

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Trade Compliance

SN74ACT7204-40FM Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.71

SB

8542.32.00.70

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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