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74HC40105PW,118

NXP Semiconductors

74HC40105PW,118 by NXP Semiconductors

74HC40105PW,118 by NXP Semiconductors is a FIFO device with a cycle time of 71.428 ns and an operating mode of asynchronous. It has a memory width of 4 and can be used in automotive applications due to its temperature grade.

Median Price

$1.475

Lifecycle Status

Suppliers In-Stock

8

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Rochester

USA . 1,058 parts In-Stock

1+ parts

-

100+ parts

$1.420

1k+ parts

$1.180

10k+ parts

$1.050

1,058

-

$1.420

$1.180

$1.050

DigiKey

USA . 1,058 parts In-Stock

1+ parts

-

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-

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$1.780

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1,058

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-

$1.780

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Verical

USA . 1,058 parts In-Stock

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-

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-

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$1.475

10k+ parts

$1.313

1,058

-

-

$1.475

$1.313

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Nova Conductors

Japan . 10 parts In-Stock

1+ parts

$0.560

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10

$0.560

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Digiode

USA . 1,766 parts In-Stock

1+ parts

$0.566

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1,766

$0.566

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Vyrian

USA . 6,681 parts In-Stock

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6,681

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VNN

France . 2,867 parts In-Stock

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Anansix

USA . 2,377 parts In-Stock

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Distributors (Availability)

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Ampacity Inc.

Singapore . 928 parts In-Stock

1+ parts

$0.510

100+ parts

-

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928

$0.510

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Corphita

USA . 4,275 parts In-Stock

1+ parts

$0.536

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4,275

$0.536

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Continental Prestige Electronics

USA . 6,886 parts In-Stock

1+ parts

$0.560

100+ parts

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10k+ parts

$0.548

6,886

$0.560

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$0.548

Argo Parts USA

USA . 4,390 parts In-Stock

1+ parts

$0.560

100+ parts

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10k+ parts

$0.543

4,390

$0.560

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$0.543

Netroflash

USA . 100 parts In-Stock

1+ parts

$0.560

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100

$0.560

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AZTECH Wire

Italy . 13,143 parts In-Stock

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$0.630

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13,143

$0.630

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Microchip USA

USA . 314 parts In-Stock

1+ parts

$4.030

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314

$4.030

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Supply Digital

USA . 2,116 parts In-Stock

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UNI Independent Distributors

Spain . 1,415 parts In-Stock

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Overview

Discover the power of the 74HC40105PW,118 by NXP Semiconductors. As a leading manufacturer in the industry, NXP delivers high-quality products that are built to last. This FIFO device is designed for asynchronous operation and offers a range of benefits and advantages for customers. With its compact size and surface-mount capability, it is perfect for a wide range of applications. Whether you need to store and retrieve data quickly or streamline your operations, this product has you covered. Its reliable performance and impressive memory density of 64 bits make it an essential component for any project. Experience the value and reliability that NXP brings to the table with the 74HC40105PW,118.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the internal components of the FIFO, ensuring long-term reliability.

Cycle Time: 71.428 ns

Offers fast data transfer speeds, making the FIFO efficient for handling data in real-time applications.

Operating Mode: ASYNCHRONOUS

Allows for independent operation and communication, enhancing flexibility and compatibility with various systems.

Nominal Supply Voltage / Vsup (V): 4.5

Optimal voltage supply for stable and efficient performance of the FIFO.

Maximum Operating Temperature: 125 °C

Can withstand high temperatures, making it suitable for automotive and industrial applications.

Organization: 16X4

Provides a good balance between storage capacity and data retrieval speed.

Minimum Operating Temperature: -40 °C

Capable of operating in extreme cold environments, ensuring versatility in various conditions.

Technology: CMOS

Utilizes low power consumption and offers high noise immunity, enhancing overall performance and efficiency.

Output Enable: YES

Allows for control over the output data, enabling efficient data flow management in the FIFO.

Maximum Access Time: 600 ns

Ensures quick access to stored data, making the FIFO suitable for time-sensitive applications.

Technical Specifications

FIFO 74HC40105PW,118 attributes and parameters. Explore more FIFO devices from NXP Semiconductors

Specs

Maximum Access Time:

600 ns

Cycle Time:

71.428 ns

JESD-30 Code:

R-PDSO-G16

JESD-609 Code:

e4

Length:

5 mm

Memory Density:

64 bit

Memory Width:

4

Moisture Sensitivity Level (MSL):

1

No. of Functions:

1

No. of Terminals:

16

No. of Words:

16 words

No. of Words Code:

16

Operating Mode:

ASYNCHRONOUS

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-40 Cel

Organization:

16X4

Output Enable:

YES

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Shape:

Package Style (Meter):

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

Parallel or Serial:

PARALLEL

Peak Reflow Temperature (C):

260

Qualification:

Not Qualified

Maximum Seated Height:

1.1 mm

Maximum Supply Voltage (Vsup):

6 V

Minimum Supply Voltage (Vsup):

2 V

Nominal Supply Voltage / Vsup (V):

4.5

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Finish:

Nickel/Palladium/Gold (Ni/Pd/Au)

Terminal Form:

GULL WING

Terminal Pitch:

.65 mm

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Width:

4.4 mm

Trade Compliance

74HC40105PW,118 Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.39.00.01

SB

8542.39.00.00

Manufacturer Highlights

NXP Semiconductors

NXP is a leading semiconductor company that creates cutting-edge technology to power secure connections in a smarter world. Founded in 2006, they have grown to become one of the top five global semiconductor companies and serve their customers in over 70 countries around the world.

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Management team

Executive Director, President, CEO

Kurt Sievers

Executive VP, CFO

Bill Betz

Executive VP, Chief Sales Officer

Ron Martino

Manufacturer fab locations 7

Fab name Location Fab Initiation Wafer Capacity

ICN8

Fabrication

Fab Initiation

1996

Netherlands

Nijmegen

Wafer Capacity

55,000

1996

55,000

ATMC (Austin Tech & Mfg Center)

Fabrication

Fab Initiation

1995

USA

Austin

Wafer Capacity

30,000

1995

30,000

N/A

Fabrication

Fab Initiation

1989

Germany

Boeblingen

Wafer Capacity

1989

CHD

Fabrication

Fab Initiation

1993

USA

Chandler

Wafer Capacity

30,000

1993

30,000

OHTC

Fabrication

Fab Initiation

1991

USA

Austin

Wafer Capacity

24,000

1991

24,000

New Expansion Fab

Fabrication

Fab Initiation

2026

USA

Austin

Wafer Capacity

2026

ECHO

Fabrication

Fab Initiation

2020

USA

Chandler

Wafer Capacity

10,000

2020

10,000

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