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74HC40105NB

NXP Semiconductors

74HC40105NB by NXP Semiconductors

74HC40105NB by NXP is a CMOS FIFO memory with a cycle time of 83.33 ns and operates asynchronously. It features a 16x4 organization, supports dual terminals, and functions within -40 °C to 125 °C, making it ideal for automotive applications.

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Digiode

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Vyrian

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One Stop Electronics

USA . 677 parts In-Stock

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Corphita

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Northwest PG Solutions

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Native Components

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Overview

Elevate your designs with the 74HC40105NB FIFO from NXP Semiconductors, a leader in high-quality semiconductor solutions. This reliable asynchronous memory device ensures seamless data handling for various applications, from automotive systems to consumer electronics. With its robust performance and exceptional temperature resilience, you gain peace of mind knowing your projects are backed by NXP's trusted technology, delivering efficiency and reliability every step of the way.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Durable and reliable material choice enhances longevity and performance.

Cycle Time: 83.33 ns

Fast cycle time ensures improved processing speeds, making it suitable for high-speed applications.

Package Shape: RECTANGULAR

Rectangular shape allows for efficient PCB layout and integration.

Operating Mode: ASYNCHRONOUS

Asynchronous operation provides flexibility in design and integration in various applications.

Nominal Supply Voltage / Vsup (V): 5

Standard supply voltage simplifies system design and compatibility with existing components.

No. of Terminals: 16

Adequate number of terminals facilitates connectivity options while maintaining a compact form factor.

Package Style (Meter): IN-LINE

In-line package style is ideal for efficient assembly processes and improves space utilization.

Maximum Operating Temperature: 125 °C

High maximum temperature rating allows this product to function reliably in extreme conditions.

Organization: 16X4

This memory organization supports multiple word lengths, enhancing data handling capabilities.

Output Characteristics: 3-STATE

3-state output provides flexibility in resource sharing among multiple devices in a system.

Minimum Operating Temperature: -40 °C

Wide operating temperature range ensures functionality in harsh environments, making it suitable for automotive applications.

Terminal Finish: TIN/NICKEL PALLADIUM GOLD

High-quality terminal finish enhances solderability and improves reliability in connections.

Terminal Position: DUAL

Dual terminal position allows for more flexible mounting options on PCBs.

Maximum Seated Height: 4.06 mm

Compact height aids in space-constrained designs, promoting efficient usage in various applications.

Width: 7.62 mm

Narrow width facilitates integration into tight spaces on printed circuit boards.

Minimum Supply Voltage (Vsup): 2 V

Low minimum supply voltage allows compatibility with a wide range of power sources.

Length: 19.09 mm

Reasonable length provides a good balance between footprint and performance.

Temperature Grade: AUTOMOTIVE

Designed for automotive applications, ensuring durability and reliability in vehicles.

Technology: CMOS

CMOS technology supports low power consumption and high speed, making it ideal for modern applications.

Parallel or Serial: PARALLEL

Parallel configuration allows for higher data throughput, beneficial in performance-critical applications.

Terminal Form: THROUGH-HOLE

Through-hole terminal form offers strong mechanical stability and is suitable for prototyping.

No. of Words: 16 words

Adequate number of words for moderate data storage needs across various applications.

Memory Width: 4

Width of 4 bits allows for optimal data handling while keeping within compact design parameters.

Terminal Pitch: 2.54 mm

Standard terminal pitch simplifies PCB design and component placement.

No. of Words Code: 16

Provides ample data storage capacity for various applications without excessive complexity.

Maximum Supply Voltage (Vsup): 6 V

Higher maximum supply voltage allows for greater performance adaptability in different circuit designs.

Memory Density: 64 bit

Sufficient memory density for effective data management and storage capabilities.

Output Enable: YES

Output enable feature provides control over device activity, enhancing power management.

Maximum Access Time: 120 ns

Adequate access time ensures compatibility with a range of applications while optimizing data retrieval.

Technical Specifications

FIFO 74HC40105NB attributes and parameters. Explore more FIFO devices from NXP Semiconductors

Specs

Maximum Access Time:

120 ns

Additional Features:

REGISTER BASED; BUBBLE BACK 750NS

Cycle Time:

83.33 ns

JESD-30 Code:

R-PDIP-T16

JESD-609 Code:

e3/e4

Length:

19.09 mm

Memory Density:

64 bit

Memory Width:

4

No. of Functions:

1

No. of Terminals:

16

No. of Words:

16 words

No. of Words Code:

16

Operating Mode:

ASYNCHRONOUS

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-40 Cel

Organization:

16X4

Output Characteristics:

3-STATE

Output Enable:

YES

Package Body Material:

PLASTIC/EPOXY

Package Code:

DIP

Package Shape:

Package Style (Meter):

IN-LINE

Parallel or Serial:

PARALLEL

Qualification:

Not Qualified

Maximum Seated Height:

4.06 mm

Maximum Supply Voltage (Vsup):

6 V

Minimum Supply Voltage (Vsup):

2 V

Nominal Supply Voltage / Vsup (V):

5

Surface Mount:

NO

Technology:

CMOS

Temperature Grade:

Terminal Finish:

TIN/NICKEL PALLADIUM GOLD

Terminal Form:

THROUGH-HOLE

Terminal Pitch:

2.54 mm

Terminal Position:

DUAL

Width:

7.62 mm

Trade Compliance

74HC40105NB Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.71

SB

8542.32.00.70

Manufacturer Highlights

NXP Semiconductors

NXP is a leading semiconductor company that creates cutting-edge technology to power secure connections in a smarter world. Founded in 2006, they have grown to become one of the top five global semiconductor companies and serve their customers in over 70 countries around the world.

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Management team

Executive Director, President, CEO

Kurt Sievers

Executive VP, CFO

Bill Betz

Executive VP, Chief Sales Officer

Ron Martino

Manufacturer fab locations 7

Fab name Location Fab Initiation Wafer Capacity

ICN8

Fabrication

Fab Initiation

1996

Netherlands

Nijmegen

Wafer Capacity

55,000

1996

55,000

ATMC (Austin Tech & Mfg Center)

Fabrication

Fab Initiation

1995

USA

Austin

Wafer Capacity

30,000

1995

30,000

N/A

Fabrication

Fab Initiation

1989

Germany

Boeblingen

Wafer Capacity

1989

CHD

Fabrication

Fab Initiation

1993

USA

Chandler

Wafer Capacity

30,000

1993

30,000

OHTC

Fabrication

Fab Initiation

1991

USA

Austin

Wafer Capacity

24,000

1991

24,000

New Expansion Fab

Fabrication

Fab Initiation

2026

USA

Austin

Wafer Capacity

2026

ECHO

Fabrication

Fab Initiation

2020

USA

Chandler

Wafer Capacity

10,000

2020

10,000

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