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SN54LS222W

Texas Instruments

SN54LS222W by Texas Instruments

SN54LS222W by Texas Instruments is a 16x4 FIFO memory IC operating at 5V, with a temperature range of -55°C to 125°C. It features asynchronous operation, flatpack package style, and dual terminal position. Ideal for military-grade applications requiring reliable data storage and retrieval in harsh environments.

Median Price

-

Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 5,514 parts In-Stock

1+ parts

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5,514

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Digiode

USA . 1,202 parts In-Stock

1+ parts

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1,202

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

One Stop Electronics

USA . 1,375 parts In-Stock

1+ parts

$3.000

100+ parts

-

1k+ parts

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1,375

$3.000

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Parana Technologies

USA . 2,315 parts In-Stock

1+ parts

$5.257

100+ parts

-

1k+ parts

$5.879

10k+ parts

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2,315

$5.257

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$5.879

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DigiPath Technology Company

USA . 1,490 parts In-Stock

1+ parts

$5.789

100+ parts

-

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10k+ parts

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1,490

$5.789

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ChromeModa Solutions

Germany . 6,121 parts In-Stock

1+ parts

$5.907

100+ parts

$4.844

1k+ parts

-

10k+ parts

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6,121

$5.907

$4.844

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IDEA Electronic Components Group

UK . 485 parts In-Stock

1+ parts

$5.907

100+ parts

-

1k+ parts

$5.316

10k+ parts

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485

$5.907

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$5.316

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AZTECH Wire

Italy . 648 parts In-Stock

1+ parts

$6.945

100+ parts

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648

$6.945

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Corphita

USA . 2,067 parts In-Stock

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2,067

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Overview

Unlock seamless data storage and retrieval with the SN54LS222W by Texas Instruments. Crafted from high-quality CERAMIC materials, this FIFO device offers unparalleled reliability and performance in a RECTANGULAR package. Perfect for military-grade applications, this ASYNCHRONOUS-operated memory IC boasts a 16x4 organization and dual terminal position, ensuring efficient data handling even in extreme temperatures. Say goodbye to data bottlenecks and hello to smooth operations with the SN54LS222W.

Feature Benefit Bullets

Package Body Material: CERAMIC

Ceramic material provides durability and heat resistance, making the product suitable for a wide range of operating temperatures.

Surface Mount: YES

Surface mount technology allows for easy and efficient PCB assembly, saving space and improving overall product reliability.

Operating Mode: ASYNCHRONOUS

Asynchronous operation simplifies the design and integration process, offering flexibility and compatibility with different systems.

Nominal Supply Voltage / Vsup (V): 5

Operating at a standard voltage of 5V ensures compatibility with common power supplies and reduces the risk of electrical issues.

Maximum Operating Temperature: 125 °C

High maximum operating temperature allows for reliable performance in harsh environmental conditions, ensuring product longevity.

Organization: 16X4

Efficient organization of 16 words with a memory width of 4 enhances data storage and retrieval capabilities for optimal performance.

Technology: TTL

Utilizing TTL technology offers fast and efficient data processing, enabling quick and accurate data transfer within the FIFO product.

Temperature Grade: MILITARY

Military-grade temperature specifications ensure reliability and performance under extreme temperature conditions, making it ideal for mission-critical applications.

Technical Specifications

FIFO SN54LS222W attributes and parameters. Explore more FIFO devices from Texas Instruments

Specs

JESD-30 Code:

R-XDFP-F20

Memory IC Type:

Memory Width:

4

No. of Terminals:

20

No. of Words:

16 words

No. of Words Code:

16

Operating Mode:

ASYNCHRONOUS

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-55 Cel

Organization:

16X4

Package Body Material:

CERAMIC

Package Code:

DFP

Package Equivalence Code:

FL20,.3

Package Shape:

Package Style (Meter):

FLATPACK

Power Supplies (V):

5

Qualification:

Not Qualified

Sub-Category:

FIFOs

Nominal Supply Voltage / Vsup (V):

5

Surface Mount:

YES

Technology:

TTL

Temperature Grade:

Terminal Form:

FLAT

Terminal Pitch:

1.27 mm

Terminal Position:

DUAL

Trade Compliance

SN54LS222W Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.71

SB

8542.32.00.70

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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