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SN74ACT7205L25RJ

Texas Instruments

SN74ACT7205L25RJ by Texas Instruments

SN74ACT7205L25RJ by Texas Instruments is a FIFO chip with 8Kx9 organization, operating at 28.5 MHz clock frequency and 35 ns cycle time. It is designed for parallel operation in commercial temperature grade applications, featuring a memory density of 73728 bits and a max supply voltage of 5.5V.

Median Price

-

Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 6,598 parts In-Stock

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6,598

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Digiode

USA . 4,319 parts In-Stock

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4,319

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Distributors (Availability)

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Parana Technologies

USA . 909 parts In-Stock

1+ parts

$4.563

100+ parts

-

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$5.014

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909

$4.563

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$5.014

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DigiPath Technology Company

USA . 126 parts In-Stock

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$5.024

100+ parts

$4.623

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126

$5.024

$4.623

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ChromeModa Solutions

Germany . 1,692 parts In-Stock

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$5.127

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$4.204

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$5.127

$4.204

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IDEA Electronic Components Group

UK . 268 parts In-Stock

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$5.127

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$4.614

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268

$5.127

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$4.614

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AZTECH Wire

Italy . 783 parts In-Stock

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$19.631

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783

$19.631

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One Stop Electronics

USA . 1,505 parts In-Stock

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$25.000

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1,505

$25.000

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Corphita

USA . 4,922 parts In-Stock

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Overview

Unlock seamless data transfer and efficient memory management with the SN74ACT7205L25RJ by Texas Instruments. Crafted with precision and reliability in mind, this FIFO chip carrier offers a high-performance solution for a wide range of applications. With its asynchronous operating mode and fast cycle time of 35ns, this CMOS technology marvel ensures optimal functionality while providing 8Kx9 organization and 8192 words capacity. Trust Texas Instruments to deliver top-notch quality and value, making your data processing tasks a breeze.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the internal components of the product.

Cycle Time: 35 ns

Fast operation allows for quick data processing and retrieval.

Operating Mode: ASYNCHRONOUS

Allows for flexible and independent operation without the need for synchronization.

Nominal Supply Voltage / Vsup (V): 5

Stable supply voltage ensures consistent performance of the product.

Maximum Clock Frequency (fCLK): 28.5 MHz

High clock frequency enables fast data transfer and processing.

Technology: CMOS

CMOS technology offers low power consumption and high noise immunity for efficient operation.

Memory Density: 73728 bit

High memory density allows for storage of a large amount of data.

Maximum Access Time: 25 ns

Quick access time ensures rapid retrieval of data when needed.

Technical Specifications

FIFO SN74ACT7205L25RJ attributes and parameters. Explore more FIFO devices from Texas Instruments

Specs

Maximum Access Time:

25 ns

Maximum Clock Frequency (fCLK):

28.5 MHz

Cycle Time:

35 ns

JESD-30 Code:

R-PQCC-J32

Memory Density:

73728 bit

Memory IC Type:

Memory Width:

9

No. of Functions:

1

No. of Terminals:

32

No. of Words:

8192 words

No. of Words Code:

8K

Operating Mode:

ASYNCHRONOUS

Maximum Operating Temperature:

70 Cel

Minimum Operating Temperature:

0 Cel

Organization:

8KX9

Output Enable:

NO

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

LDCC32,.5X.6

Package Shape:

Package Style (Meter):

CHIP CARRIER

Parallel or Serial:

PARALLEL

Peak Reflow Temperature (C):

NOT SPECIFIED

Power Supplies (V):

5

Qualification:

Not Qualified

Maximum Standby Current:

.002 Amp

Sub-Category:

FIFOs

Maximum Supply Current:

120 mA

Maximum Supply Voltage (Vsup):

5.5 V

Minimum Supply Voltage (Vsup):

4.5 V

Nominal Supply Voltage / Vsup (V):

5

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Form:

J BEND

Terminal Pitch:

1.27 mm

Terminal Position:

QUAD

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Trade Compliance

SN74ACT7205L25RJ Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.71

SB

8542.32.00.70

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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