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SN74ACT7202LA-35RJR

Texas Instruments

SN74ACT7202LA-35RJR by Texas Instruments

SN74ACT7202LA-35RJR by Texas Instruments is a FIFO chip with 1Kx9 organization, 45ns cycle time, and 22.2MHz clock frequency. It operates at 5V, has 32 terminals in a chip carrier package style, and is ideal for parallel memory applications.

Median Price

-

Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 4,529 parts In-Stock

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4,529

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Digiode

USA . 2,471 parts In-Stock

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2,471

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Distributors (Availability)

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Parana Technologies

USA . 913 parts In-Stock

1+ parts

$3.454

100+ parts

-

1k+ parts

$3.978

10k+ parts

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913

$3.454

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$3.978

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DigiPath Technology Company

USA . 1,399 parts In-Stock

1+ parts

$3.803

100+ parts

-

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1,399

$3.803

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ChromeModa Solutions

Germany . 1,897 parts In-Stock

1+ parts

$3.881

100+ parts

$3.182

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1,897

$3.881

$3.182

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IDEA Electronic Components Group

UK . 107 parts In-Stock

1+ parts

$3.881

100+ parts

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$3.493

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107

$3.881

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$3.493

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AZTECH Wire

Italy . 459 parts In-Stock

1+ parts

$9.020

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459

$9.020

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One Stop Electronics

USA . 464 parts In-Stock

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$18.000

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464

$18.000

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Corphita

USA . 4,274 parts In-Stock

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Overview

Experience seamless data transfer with the SN74ACT7202LA-35RJR FIFO chip by Texas Instruments. Known for their superior quality and reliability, Texas Instruments brings you a cutting-edge solution for efficient data storage and retrieval. Ideal for a wide range of applications, this FIFO chip ensures smooth operation and high performance. With fast cycle times and low power consumption, this chip offers exceptional value and benefits to customers looking for a reliable data management solution. Upgrade your systems with the SN74ACT7202LA-35RJR and experience the difference today!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy as the package body material can provide good insulation and protection for the internal components of the FIFO, ensuring durability and reliability.

Cycle Time: 45 ns

The fast cycle time of 45 ns allows for efficient data transfer and processing, making this FIFO suitable for high-speed applications.

Operating Mode: ASYNCHRONOUS

The asynchronous operating mode enables independent and simultaneous data transfers within the FIFO, enhancing overall performance and flexibility.

Maximum Clock Frequency (fCLK): 22.2 MHz

The high maximum clock frequency of 22.2 MHz indicates the FIFO's capability to handle data at a fast rate, making it ideal for high-performance systems.

Technology: CMOS

CMOS technology offers low power consumption and high noise immunity, contributing to the efficiency and reliability of the FIFO.

Memory IC Type: OTHER FIFO

The specific memory IC type designed for FIFO functionality ensures optimized performance and compatibility with various systems and applications.

Technical Specifications

FIFO SN74ACT7202LA-35RJR attributes and parameters. Explore more FIFO devices from Texas Instruments

Specs

Maximum Access Time:

35 ns

Additional Features:

RETRANSMIT

Maximum Clock Frequency (fCLK):

22.2 MHz

Cycle Time:

45 ns

JESD-30 Code:

R-PQCC-J32

JESD-609 Code:

e0

Length:

13.995 mm

Memory Density:

9216 bit

Memory IC Type:

Memory Width:

9

No. of Functions:

1

No. of Terminals:

32

No. of Words:

1024 words

No. of Words Code:

1K

Operating Mode:

ASYNCHRONOUS

Maximum Operating Temperature:

70 Cel

Minimum Operating Temperature:

0 Cel

Organization:

1KX9

Output Characteristics:

3-STATE

Output Enable:

NO

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

LDCC32,.5X.6

Package Shape:

Package Style (Meter):

CHIP CARRIER

Parallel or Serial:

PARALLEL

Power Supplies (V):

5

Qualification:

Not Qualified

Maximum Seated Height:

3.56 mm

Maximum Standby Current:

.0005 Amp

Sub-Category:

FIFOs

Maximum Supply Current:

80 mA

Maximum Supply Voltage (Vsup):

5.5 V

Minimum Supply Voltage (Vsup):

4.5 V

Nominal Supply Voltage / Vsup (V):

5

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Finish:

TIN LEAD

Terminal Form:

J BEND

Terminal Pitch:

1.27 mm

Terminal Position:

QUAD

Width:

11.4554 mm

Trade Compliance

SN74ACT7202LA-35RJR Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.71

SB

8542.32.00.70

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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