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SN74ACT7203-40FM

Texas Instruments

SN74ACT7203-40FM by Texas Instruments

SN74ACT7203-40FM by Texas Instruments is a FIFO chip with 2Kx9 organization, 20 MHz clock frequency, and 18432-bit memory density. It operates asynchronously at 5V and has a max access time of 40ns. Ideal for applications requiring fast data storage and retrieval in commercial temperature environments.

Median Price

-

Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 3,339 parts In-Stock

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3,339

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Vyrian

USA . 2,449 parts In-Stock

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2,449

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Parana Technologies

USA . 1,958 parts In-Stock

1+ parts

$2.121

100+ parts

-

1k+ parts

$2.634

10k+ parts

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1,958

$2.121

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$2.634

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DigiPath Technology Company

USA . 2,050 parts In-Stock

1+ parts

$2.335

100+ parts

-

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2,050

$2.335

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ChromeModa Solutions

Germany . 2,248 parts In-Stock

1+ parts

$2.383

100+ parts

$1.954

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-

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2,248

$2.383

$1.954

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IDEA Electronic Components Group

UK . 536 parts In-Stock

1+ parts

$2.383

100+ parts

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$2.145

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536

$2.383

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$2.145

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One Stop Electronics

USA . 1,174 parts In-Stock

1+ parts

$14.000

100+ parts

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1,174

$14.000

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AZTECH Wire

Italy . 238 parts In-Stock

1+ parts

$17.543

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238

$17.543

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Corphita

USA . 435 parts In-Stock

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435

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Overview

Enhance your electronic designs with the high-quality SN74ACT7203-40FM FIFO by Texas Instruments. This reliable chip carrier offers a seamless asynchronous operating mode and a wide range of applications, making it ideal for various projects. With a maximum clock frequency of 20 MHz and a memory density of 18432 bits, this FIFO delivers exceptional performance and efficiency. Trust in Texas Instruments to provide top-notch technology that meets your needs and exceeds your expectations. Elevate your design capabilities with the SN74ACT7203-40FM and experience the value and benefits it brings to your projects.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Durable and lightweight material for the package, ensuring the product is robust and easy to handle.

Surface Mount: YES

Enables easy installation and space-saving on circuit boards.

Operating Mode: ASYNCHRONOUS

Allows for independent operation without requiring a synchronized clock signal, providing flexibility in various applications.

Nominal Supply Voltage / Vsup (V): 5

Standard voltage supply compatible with most electronic systems.

Maximum Operating Temperature: 70 °C

Wide operating temperature range suitable for various environmental conditions.

Memory IC Type: OTHER FIFO

Specifically designed as a FIFO (First In, First Out) memory IC, ideal for buffering data in sequential order.

Technical Specifications

FIFO SN74ACT7203-40FM attributes and parameters. Explore more FIFO devices from Texas Instruments

Specs

Maximum Access Time:

40 ns

Maximum Clock Frequency (fCLK):

20 MHz

JESD-30 Code:

R-PQCC-J32

Memory Density:

18432 bit

Memory IC Type:

Memory Width:

9

No. of Terminals:

32

No. of Words:

2048 words

No. of Words Code:

2K

Operating Mode:

ASYNCHRONOUS

Maximum Operating Temperature:

70 Cel

Minimum Operating Temperature:

0 Cel

Organization:

2KX9

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

LDCC32,.5X.6

Package Shape:

Package Style (Meter):

CHIP CARRIER

Peak Reflow Temperature (C):

NOT SPECIFIED

Power Supplies (V):

5

Qualification:

Not Qualified

Maximum Standby Current:

.01 Amp

Sub-Category:

FIFOs

Maximum Supply Current:

95 mA

Nominal Supply Voltage / Vsup (V):

5

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Form:

J BEND

Terminal Pitch:

1.27 mm

Terminal Position:

QUAD

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Trade Compliance

SN74ACT7203-40FM Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.71

SB

8542.32.00.70

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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