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72V241L15PFGI8

Renesas Electronics

72V241L15PFGI8 by Renesas Electronics

Renesas Electronics' 72V241L15PFGI8 FIFO operates synchronously with a cycle time of 15 ns. It features a memory density of 36864 bit and an organization of 4KX9, making it ideal for industrial applications requiring fast access times. With parallel operation and output enable functionality, this FIFO is suitable for various high-speed data processing tasks.

Median Price

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Lifecycle Status

EOL

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3

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1k+

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AZTECH Wire

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QUARKTWIN TECHNOLOGY LTD

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Overview

Discover the innovative 72V241L15PFGI8 by Renesas Electronics, a high-quality FIFO product that offers exceptional performance and reliability. Renesas Electronics, a trusted manufacturer, brings you a versatile solution suitable for a wide range of applications. With its fast cycle time and synchronous operation, this FIFO ensures efficient data processing. Experience the value and benefits of seamless operation with a nominal supply voltage of 3.3V and a low profile package style. Elevate your projects with the 72V241L15PFGI8 and enjoy superior functionality and convenience like never before.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Plastic/Epoxy material provides good insulation and protection, making the transistor durable and reliable for various applications.

Polarity or Channel Type: PNP

PNP transistors are suitable for applications where negative voltage control is needed, offering flexibility in circuit design.

Maximum VCEsat: 0.3 V

Low VCEsat value results in lower power dissipation and higher efficiency in the transistor operation.

Package Shape: ROUND

Round package shape facilitates easy mounting and handling during assembly, simplifying the manufacturing process.

Terminal Form: THROUGH-HOLE

Through-hole terminals provide strong mechanical connection and ease of soldering, ensuring reliable electrical contact.

Maximum Power Dissipation (Abs): 0.4 W

With a high maximum power dissipation, the transistor can handle higher currents and voltages without overheating.

Minimum DC Current Gain (hFE): 25

A minimum hFE value of 25 ensures consistent amplification of input signals, improving the overall performance of the transistor.

Maximum Operating Temperature: 125 °C

High maximum operating temperature allows the transistor to operate reliably in a wide range of environmental conditions.

Maximum Collector-Base Capacitance: 7 pF

Low collector-base capacitance minimizes signal distortion and ensures high-frequency performance in RF applications.

Maximum Collector-Emitter Voltage: 50 V

With a maximum VCE voltage rating of 50V, the transistor can be used in various circuit designs without risk of breakdown.

Maximum Collector Current (IC): 0.15 A

The transistor has a maximum collector current rating of 0.15A, allowing it to handle moderate current levels in different applications.

Nominal Transition Frequency (fT): 80 MHz

High nominal transition frequency of 80MHz indicates good high-frequency performance, making the transistor suitable for RF and audio applications.

Technical Specifications

FIFO 72V241L15PFGI8 attributes and parameters. Explore more FIFO devices from Renesas Electronics

Specs

Maximum Access Time:

10 ns

Cycle Time:

15 ns

JESD-30 Code:

S-PQFP-G32

JESD-609 Code:

e3

Length:

7 mm

Memory Density:

36864 bit

Memory IC Type:

Memory Width:

9

Moisture Sensitivity Level (MSL):

3

No. of Functions:

1

No. of Terminals:

32

No. of Words:

4096 words

No. of Words Code:

4K

Operating Mode:

SYNCHRONOUS

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Organization:

4KX9

Output Enable:

YES

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Shape:

Package Style (Meter):

FLATPACK, LOW PROFILE

Parallel or Serial:

PARALLEL

Peak Reflow Temperature (C):

260

Maximum Seated Height:

1.6 mm

Maximum Supply Voltage (Vsup):

3.6 V

Minimum Supply Voltage (Vsup):

3 V

Nominal Supply Voltage / Vsup (V):

3.3

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Finish:

Matte Tin (Sn)

Terminal Form:

GULL WING

Terminal Pitch:

.8 mm

Terminal Position:

QUAD

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Width:

7 mm

Trade Compliance

72V241L15PFGI8 Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.71

SB

8542.32.00.70

PCN

Manufacturer Highlights

Renesas Electronics

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