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SN74ACT7201A-35N

Texas Instruments

SN74ACT7201A-35N by Texas Instruments

SN74ACT7201A-35N by Texas Instruments is a FIFO with 512x9 organization, 45ns cycle time, and 22.2MHz max clock frequency. It operates synchronously at 5V and is ideal for parallel memory applications requiring fast access times in commercial temperature environments.

Median Price

-

Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

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Vyrian

USA . 5,317 parts In-Stock

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5,317

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Digiode

USA . 569 parts In-Stock

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569

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Distributors (Availability)

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Parana Technologies

USA . 1,938 parts In-Stock

1+ parts

$3.666

100+ parts

-

1k+ parts

$4.174

10k+ parts

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1,938

$3.666

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$4.174

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DigiPath Technology Company

USA . 1,936 parts In-Stock

1+ parts

$4.037

100+ parts

$3.714

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1,936

$4.037

$3.714

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ChromeModa Solutions

Germany . 4,783 parts In-Stock

1+ parts

$4.119

100+ parts

$3.378

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4,783

$4.119

$3.378

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IDEA Electronic Components Group

UK . 1,998 parts In-Stock

1+ parts

$4.119

100+ parts

-

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$3.707

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1,998

$4.119

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$3.707

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One Stop Electronics

USA . 139 parts In-Stock

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$12.000

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139

$12.000

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AZTECH Wire

Italy . 189 parts In-Stock

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$19.674

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189

$19.674

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Corphita

USA . 4,499 parts In-Stock

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4,499

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Perfect Parts

USA . 3 parts In-Stock

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3

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Overview

Enhance your electronic projects with the SN74ACT7201A-35N by Texas Instruments, a top-quality FIFO memory solution that delivers reliable performance and seamless data storage capabilities. Manufactured by an industry leader known for innovation and excellence, this product offers a wide range of applications in various electronic devices. With its fast cycle time and synchronous operation mode, this FIFO memory ensures efficient data processing and seamless integration. Trust in Texas Instruments to provide you with cutting-edge technology that exceeds your expectations. Elevate your projects with the SN74ACT7201A-35N and experience unparalleled value and performance.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the internal components of the FIFO, ensuring longevity and reliability.

Cycle Time: 45 ns

Fast data processing time allows for efficient handling of incoming and outgoing data, improving overall system performance.

Operating Mode: SYNCHRONOUS

Synchronous operation ensures that data transfer is coordinated with the system clock, leading to accurate and synchronized data communication.

Maximum Clock Frequency (fCLK): 22.2 MHz

High clock frequency enables fast data transfer rates, increasing throughput and overall system efficiency.

Memory IC Type: OTHER FIFO

Specifically designed as a FIFO (First In, First Out) memory IC, providing optimized data storage and retrieval for sequential data.

Technical Specifications

FIFO SN74ACT7201A-35N attributes and parameters. Explore more FIFO devices from Texas Instruments

Specs

Maximum Access Time:

35 ns

Additional Features:

RETRANSMIT

Maximum Clock Frequency (fCLK):

22.2 MHz

Cycle Time:

45 ns

JESD-30 Code:

R-PDIP-T28

Length:

36.32 mm

Memory Density:

4608 bit

Memory IC Type:

Memory Width:

9

No. of Functions:

1

No. of Terminals:

28

No. of Words:

512 words

No. of Words Code:

512

Operating Mode:

SYNCHRONOUS

Maximum Operating Temperature:

70 Cel

Minimum Operating Temperature:

0 Cel

Organization:

512X9

Output Characteristics:

3-STATE

Output Enable:

NO

Package Body Material:

PLASTIC/EPOXY

Package Code:

DIP

Package Equivalence Code:

DIP28,.6

Package Shape:

Package Style (Meter):

IN-LINE

Parallel or Serial:

PARALLEL

Power Supplies (V):

5

Qualification:

Not Qualified

Maximum Seated Height:

5.08 mm

Maximum Standby Current:

.008 Amp

Sub-Category:

FIFOs

Maximum Supply Current:

80 mA

Maximum Supply Voltage (Vsup):

5.5 V

Minimum Supply Voltage (Vsup):

4.5 V

Nominal Supply Voltage / Vsup (V):

5

Surface Mount:

NO

Technology:

CMOS

Temperature Grade:

Terminal Form:

THROUGH-HOLE

Terminal Pitch:

2.54 mm

Terminal Position:

DUAL

Width:

15.24 mm

Trade Compliance

SN74ACT7201A-35N Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.71

SB

8542.32.00.70

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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