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5962-9560801QYX

Texas Instruments

5962-9560801QYX by Texas Instruments

5962-9560801QYX by Texas Instruments is a MILITARY-grade FIFO with 1KX36 organization, 20 ns cycle time, and 5V nominal voltage. It is used in applications requiring fast synchronous operation and high reliability in harsh environments.

Median Price

-

Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 2,610 parts In-Stock

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2,610

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Digiode

USA . 1,559 parts In-Stock

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1,559

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Distributors (Availability)

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Native Components

USA . 868 parts In-Stock

1+ parts

$1.217

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-

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868

$1.217

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Northwest PG Solutions

USA . 1,711 parts In-Stock

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$1.339

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1,711

$1.339

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Parana Technologies

USA . 866 parts In-Stock

1+ parts

$2.889

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$3.383

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866

$2.889

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$3.383

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ChromeModa Solutions

Germany . 5,379 parts In-Stock

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$3.246

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$2.662

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5,379

$3.246

$2.662

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IDEA Electronic Components Group

UK . 1,481 parts In-Stock

1+ parts

$3.246

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$2.921

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1,481

$3.246

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$2.921

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One Stop Electronics

USA . 354 parts In-Stock

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$4.000

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354

$4.000

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AZTECH Wire

Italy . 282 parts In-Stock

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$14.445

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$14.445

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Corphita

USA . 3,551 parts In-Stock

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DigiPath Technology Company

USA . 1,532 parts In-Stock

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$2.927

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$2.927

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Overview

Elevate your design with the high-quality 5962-9560801QYX by Texas Instruments. As a leading manufacturer in the industry, Texas Instruments delivers top-notch FIFO products that are perfect for applications requiring fast and efficient data transfer. With a MILITARY-grade screening level and a wide operating temperature range, this device offers reliability and durability. Experience seamless performance with a synchronous operating mode and quick cycle time of 20 ns. Trust in Texas Instruments to provide you with innovative solutions that meet your needs and exceed your expectations.

Feature Benefit Bullets

Package Body Material: CERAMIC, GLASS-SEALED

The ceramic, glass-sealed package provides durability and protection for the components inside, ensuring long-term reliability.

Cycle Time: 20 ns

The fast cycle time of 20 ns allows for efficient data processing and quick access to information, making this FIFO ideal for high-speed applications.

Operating Mode: SYNCHRONOUS

The synchronous operating mode ensures that data is transmitted and processed in a synchronized manner, reducing the risk of data errors or loss.

Nominal Supply Voltage / Vsup (V): 5

The 5V supply voltage is standard and widely available, making it easy to integrate this FIFO into existing systems.

Memory Density: 36864 bit

With a high memory density of 36864 bits, this FIFO can store a large amount of data efficiently, making it suitable for complex applications.

Technical Specifications

FIFO 5962-9560801QYX attributes and parameters. Explore more FIFO devices from Texas Instruments

Specs

Maximum Access Time:

15 ns

Cycle Time:

20 ns

JESD-30 Code:

S-GQFP-F132

Length:

24.13 mm

Memory Density:

36864 bit

Memory Width:

36

No. of Functions:

1

No. of Terminals:

132

No. of Words:

1024 words

No. of Words Code:

1K

Operating Mode:

SYNCHRONOUS

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-55 Cel

Organization:

1KX36

Output Enable:

YES

Package Body Material:

CERAMIC, GLASS-SEALED

Package Code:

QFF

Package Shape:

Package Style (Meter):

FLATPACK

Parallel or Serial:

PARALLEL

Qualification:

Not Qualified

Screening Level:

MIL-PRF-38535 Class Q

Maximum Seated Height:

3.81 mm

Maximum Supply Voltage (Vsup):

5.5 V

Minimum Supply Voltage (Vsup):

4.5 V

Nominal Supply Voltage / Vsup (V):

5

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Form:

FLAT

Terminal Pitch:

.635 mm

Terminal Position:

QUAD

Width:

24.13 mm

Trade Compliance

5962-9560801QYX Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.71

SB

8542.32.00.70

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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