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SN74ACT7204-30N

Texas Instruments

SN74ACT7204-30N by Texas Instruments

SN74ACT7204-30N by Texas Instruments is a 4Kx9 FIFO memory IC with 36864-bit memory density. It operates asynchronously at a max clock frequency of 25 MHz and has a standby current of 0.01A. This FIFO package is ideal for applications requiring fast data access and storage in commercial temperature environments.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 5,649 parts In-Stock

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5,649

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Digiode

USA . 3,644 parts In-Stock

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3,644

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Distributors (Availability)

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Parana Technologies

USA . 1,104 parts In-Stock

1+ parts

$1.923

100+ parts

-

1k+ parts

$2.461

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1,104

$1.923

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$2.461

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ChromeModa Solutions

Germany . 4,614 parts In-Stock

1+ parts

$2.161

100+ parts

$1.772

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4,614

$2.161

$1.772

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IDEA Electronic Components Group

UK . 2,218 parts In-Stock

1+ parts

$2.161

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$1.945

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2,218

$2.161

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$1.945

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AZTECH Wire

Italy . 493 parts In-Stock

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$18.324

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493

$18.324

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One Stop Electronics

USA . 1,360 parts In-Stock

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$28.000

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1,360

$28.000

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Corphita

USA . 1,943 parts In-Stock

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1,943

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DigiPath Technology Company

USA . 422 parts In-Stock

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$1.948

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422

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$1.948

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Overview

Unlock seamless data transfer and improve system performance with the SN74ACT7204-30N FIFO by Texas Instruments. Known for their top-quality products, Texas Instruments delivers unmatched reliability and innovation. This FIFO device is ideal for applications requiring fast and efficient data buffering, such as networking equipment, telecommunications systems, and industrial automation. Experience the value of smooth data flow and enhanced productivity with this high-performance solution from Texas Instruments.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy material makes the product lightweight and durable, suitable for various applications.

Package Shape: RECTANGULAR

The rectangular shape allows for easy integration and placement within a circuit or system.

Operating Mode: ASYNCHRONOUS

The asynchronous operation mode allows for flexible data transfer without requiring a clock signal, making it versatile in different setups.

Nominal Supply Voltage / Vsup (V): 5

The 5V supply voltage is common and easily accessible, ensuring compatibility with different systems.

Maximum Operating Temperature: 70 °C

The high operating temperature range of 0 to 70 °C makes the product suitable for industrial and commercial environments.

Organization: 4KX9

The organization of 4KX9 allows for efficient storage and retrieval of data in a 4K x 9 bit configuration.

Maximum Clock Frequency (fCLK): 25 MHz

The high maximum clock frequency of 25 MHz enables fast data transfer and processing speeds.

Technology: CMOS

The CMOS technology used in the product ensures low power consumption and high noise immunity, enhancing overall performance.

Memory Width: 9

The memory width of 9 bits allows for the storage of data in a wider format, increasing the versatility of the product.

Maximum Supply Current: 95 mA

The maximum supply current of 95 mA ensures efficient power usage and reduces the risk of overheating or power-related issues.

No. of Words: 4096 words

With a capacity of 4096 words, the product can store a large amount of data for various applications.

Maximum Standby Current: 0.01 Amp

The low maximum standby current of 0.01 Amp ensures minimal power consumption during idle or standby modes, improving energy efficiency.

Technical Specifications

FIFO SN74ACT7204-30N attributes and parameters. Explore more FIFO devices from Texas Instruments

Specs

Maximum Access Time:

30 ns

Maximum Clock Frequency (fCLK):

25 MHz

JESD-30 Code:

R-PDIP-T28

Memory Density:

36864 bit

Memory IC Type:

Memory Width:

9

No. of Terminals:

28

No. of Words:

4096 words

No. of Words Code:

4K

Operating Mode:

ASYNCHRONOUS

Maximum Operating Temperature:

70 Cel

Minimum Operating Temperature:

0 Cel

Organization:

4KX9

Package Body Material:

PLASTIC/EPOXY

Package Code:

DIP

Package Equivalence Code:

DIP28,.6

Package Shape:

Package Style (Meter):

IN-LINE

Peak Reflow Temperature (C):

NOT SPECIFIED

Power Supplies (V):

5

Qualification:

Not Qualified

Maximum Standby Current:

.01 Amp

Sub-Category:

FIFOs

Maximum Supply Current:

95 mA

Nominal Supply Voltage / Vsup (V):

5

Surface Mount:

NO

Technology:

CMOS

Temperature Grade:

Terminal Form:

THROUGH-HOLE

Terminal Pitch:

2.54 mm

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Trade Compliance

SN74ACT7204-30N Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.71

SB

8542.32.00.70

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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