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5962-9562801QYA

Texas Instruments

5962-9562801QYA by Texas Instruments

Texas Instruments' 5962-9562801QYA is a MILITARY-grade FIFO with 512x36 organization, operating at 50 MHz clock frequency. It features a cycle time of 20 ns and operates synchronously. Ideal for applications requiring high-speed data storage and retrieval in harsh environments.

Median Price

-

Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 6,405 parts In-Stock

1+ parts

-

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6,405

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Digiode

USA . 4,058 parts In-Stock

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-

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4,058

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Parana Technologies

USA . 1,336 parts In-Stock

1+ parts

$2.362

100+ parts

-

1k+ parts

$2.860

10k+ parts

-

1,336

$2.362

-

$2.860

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DigiPath Technology Company

USA . 133 parts In-Stock

1+ parts

$2.601

100+ parts

$2.393

1k+ parts

-

10k+ parts

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133

$2.601

$2.393

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ChromeModa Solutions

Germany . 3,428 parts In-Stock

1+ parts

$2.654

100+ parts

$2.176

1k+ parts

-

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3,428

$2.654

$2.176

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IDEA Electronic Components Group

UK . 801 parts In-Stock

1+ parts

$2.654

100+ parts

-

1k+ parts

$2.389

10k+ parts

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801

$2.654

-

$2.389

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AZTECH Wire

Italy . 281 parts In-Stock

1+ parts

$15.146

100+ parts

-

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281

$15.146

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One Stop Electronics

USA . 395 parts In-Stock

1+ parts

$19.000

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-

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395

$19.000

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Corphita

USA . 4,718 parts In-Stock

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4,718

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Northwest PG Solutions

USA . 1,292 parts In-Stock

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$4.773

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1,292

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$4.773

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Native Components

USA . 69 parts In-Stock

1+ parts

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$4.724

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69

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$4.724

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Overview

Discover the unparalleled quality and reliability of the 5962-9562801QYA FIFO by Texas Instruments. Built with precision and expertise, this ceramic, metal-sealed co-fired device is designed for military-grade applications where performance and durability are non-negotiable. With a synchronous operating mode and a fast cycle time of 20ns, this versatile FIFO offers seamless data storage and retrieval. Experience the benefits of a trusted manufacturer, cutting-edge technology, and a product that delivers unmatched value to meet your toughest challenges. Elevate your projects with the Texas Instruments 5962-9562801QYA FIFO.

Feature Benefit Bullets

Package Body Material: CERAMIC, METAL-SEALED COFIRED

The use of ceramic and metal-sealed cofired materials ensures durability and reliability of the product, making it suitable for harsh operating conditions.

Cycle Time: 20 ns

The fast cycle time of 20 ns ensures efficient data transfer and processing, making this FIFO a high-performance solution.

Operating Mode: SYNCHRONOUS

The synchronous operating mode ensures precise timing and coordination of data transfer, reducing the likelihood of errors and improving overall system performance.

Maximum Clock Frequency (fCLK): 50 MHz

With a maximum clock frequency of 50 MHz, this FIFO is capable of handling high-speed data processing tasks effectively, making it suitable for demanding applications.

Technology: CMOS

The CMOS technology used in this FIFO offers low power consumption and high noise immunity, making it an energy-efficient and reliable choice for electronic systems.

Technical Specifications

FIFO 5962-9562801QYA attributes and parameters. Explore more FIFO devices from Texas Instruments

Specs

Maximum Access Time:

15 ns

Maximum Clock Frequency (fCLK):

50 MHz

Cycle Time:

20 ns

JESD-30 Code:

S-CQFP-F132

Length:

24.13 mm

Memory Density:

18432 bit

Memory IC Type:

Memory Width:

36

No. of Functions:

1

No. of Terminals:

132

No. of Words:

512 words

No. of Words Code:

512

Operating Mode:

SYNCHRONOUS

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-55 Cel

Organization:

512X36

Output Enable:

NO

Package Body Material:

CERAMIC, METAL-SEALED COFIRED

Package Code:

DFP

Package Equivalence Code:

QFL132,.95SQ,25

Package Shape:

Package Style (Meter):

FLATPACK

Parallel or Serial:

PARALLEL

Peak Reflow Temperature (C):

NOT SPECIFIED

Power Supplies (V):

5

Qualification:

Not Qualified

Screening Level:

MIL-STD-883

Maximum Seated Height:

3.81 mm

Maximum Standby Current:

.0004 Amp

Sub-Category:

FIFOs

Maximum Supply Voltage (Vsup):

5.5 V

Minimum Supply Voltage (Vsup):

4.5 V

Nominal Supply Voltage / Vsup (V):

5

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Form:

FLAT

Terminal Pitch:

.635 mm

Terminal Position:

QUAD

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Width:

24.13 mm

Trade Compliance

5962-9562801QYA Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.71

SB

8542.32.00.70

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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