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5962-9470401QXX

Texas Instruments

5962-9470401QXX by Texas Instruments

5962-9470401QXX by Texas Instruments is a MILITARY-grade FIFO with 512x18 organization, 20 ns cycle time, and 5V nominal voltage. It is ideal for applications requiring fast synchronous operation in harsh environments.

Median Price

-

Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 6,978 parts In-Stock

1+ parts

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6,978

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Digiode

USA . 4,736 parts In-Stock

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4,736

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Native Components

USA . 494 parts In-Stock

1+ parts

$0.400

100+ parts

-

1k+ parts

-

10k+ parts

$0.384

494

$0.400

-

-

$0.384

Northwest PG Solutions

USA . 1,114 parts In-Stock

1+ parts

$0.440

100+ parts

-

1k+ parts

-

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$0.388

1,114

$0.440

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-

$0.388

Parana Technologies

USA . 871 parts In-Stock

1+ parts

$4.709

100+ parts

-

1k+ parts

$5.199

10k+ parts

-

871

$4.709

-

$5.199

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DigiPath Technology Company

USA . 221 parts In-Stock

1+ parts

$5.185

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-

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221

$5.185

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ChromeModa Solutions

Germany . 5,501 parts In-Stock

1+ parts

$5.291

100+ parts

$4.339

1k+ parts

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5,501

$5.291

$4.339

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IDEA Electronic Components Group

UK . 213 parts In-Stock

1+ parts

$5.291

100+ parts

-

1k+ parts

$4.762

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213

$5.291

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$4.762

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AZTECH Wire

Italy . 326 parts In-Stock

1+ parts

$13.322

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326

$13.322

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One Stop Electronics

USA . 534 parts In-Stock

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$27.000

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534

$27.000

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Corphita

USA . 3,071 parts In-Stock

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3,071

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Overview

Discover the unparalleled quality and reliability of the 5962-9470401QXX by Texas Instruments, a leading manufacturer in the industry. This FIFO device boasts a MILITARY grade screening level and operates at a fast cycle time of 20 ns. With its BICMOS technology and synchronous operation mode, this product offers exceptional performance and precision. Ideal for military and aerospace applications, this FIFO memory promises to deliver seamless data storage and retrieval with a wide temperature range. Trust Texas Instruments for cutting-edge solutions that exceed expectations and elevate your projects to new heights.

Feature Benefit Bullets

Package Body Material: CERAMIC, METAL-SEALED COFIRED

The use of ceramic and metal-sealed cofired material in the package body ensures durability and resistance to temperature variations, making this product suitable for harsh environments.

Cycle Time: 20 ns

With a fast cycle time of 20 ns, this FIFO product offers high-speed data processing capabilities, making it ideal for applications requiring quick data retrieval and storage.

Package Shape: SQUARE

The square package shape helps in efficient use of space and facilitates easier integration into circuit layouts.

Nominal Supply Voltage / Vsup (V): 5

Operating at a nominal supply voltage of 5V ensures compatibility with standard electronic systems and power sources.

Minimum Operating Temperature: -55 °C

The ability to operate at temperatures as low as -55°C makes this product suitable for use in extreme cold environments without compromising performance.

Technology: BICMOS

Utilizing BICMOS technology offers a balance between the speed of bipolar transistors and low power consumption of CMOS technology, making this product efficient and reliable.

Technical Specifications

FIFO 5962-9470401QXX attributes and parameters. Explore more FIFO devices from Texas Instruments

Specs

Maximum Access Time:

12 ns

Cycle Time:

20 ns

JESD-30 Code:

S-CPGA-P84

Length:

29.464 mm

Memory Density:

9216 bit

Memory Width:

18

No. of Functions:

1

No. of Terminals:

84

No. of Words:

512 words

No. of Words Code:

512

Operating Mode:

SYNCHRONOUS

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-55 Cel

Organization:

512X18

Output Enable:

NO

Package Body Material:

CERAMIC, METAL-SEALED COFIRED

Package Code:

PGA

Package Shape:

Package Style (Meter):

GRID ARRAY

Parallel or Serial:

PARALLEL

Peak Reflow Temperature (C):

NOT SPECIFIED

Qualification:

Qualified

Screening Level:

MIL-PRF-38535 Class Q

Maximum Seated Height:

5.21 mm

Maximum Supply Voltage (Vsup):

5.5 V

Minimum Supply Voltage (Vsup):

4.5 V

Nominal Supply Voltage / Vsup (V):

5

Surface Mount:

NO

Technology:

BICMOS

Temperature Grade:

Terminal Form:

PIN/PEG

Terminal Pitch:

2.54 mm

Terminal Position:

PERPENDICULAR

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Width:

29.464 mm

Trade Compliance

5962-9470401QXX Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.71

SB

8542.32.00.70

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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