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SN74ACT7204-40N

Texas Instruments

SN74ACT7204-40N by Texas Instruments

SN74ACT7204-40N by Texas Instruments is a 4Kx9 FIFO memory IC with 36864-bit memory density and 20 MHz max clock frequency. It operates asynchronously at a nominal voltage of 5V, making it ideal for applications requiring fast data storage and retrieval in commercial temperature environments.

Median Price

-

Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 8,519 parts In-Stock

1+ parts

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8,519

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Digiode

USA . 82 parts In-Stock

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82

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Parana Technologies

USA . 1,641 parts In-Stock

1+ parts

$3.253

100+ parts

$302.086

1k+ parts

$2.928

10k+ parts

-

1,641

$3.253

$302.086

$2.928

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DigiPath Technology Company

USA . 1,456 parts In-Stock

1+ parts

$3.582

100+ parts

$3.295

1k+ parts

-

10k+ parts

-

1,456

$3.582

$3.295

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ChromeModa Solutions

Germany . 5,505 parts In-Stock

1+ parts

$3.655

100+ parts

$2.997

1k+ parts

-

10k+ parts

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5,505

$3.655

$2.997

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IDEA Electronic Components Group

UK . 415 parts In-Stock

1+ parts

$3.655

100+ parts

-

1k+ parts

$3.290

10k+ parts

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415

$3.655

-

$3.290

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AZTECH Wire

Italy . 304 parts In-Stock

1+ parts

$17.253

100+ parts

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304

$17.253

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One Stop Electronics

USA . 899 parts In-Stock

1+ parts

$24.000

100+ parts

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899

$24.000

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Corphita

USA . 2,685 parts In-Stock

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2,685

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Overview

Experience smooth data transfer and efficient memory management with the SN74ACT7204-40N by Texas Instruments. As a leading manufacturer in the industry, Texas Instruments ensures top-notch quality and reliability in their products. This FIFO device is perfect for applications requiring asynchronous operation and a high clock frequency. With a wide range of temperature grades and low standby current, this product offers exceptional value and benefits to customers looking for seamless data storage solutions. Choose the SN74ACT7204-40N for unmatched performance and peace of mind in your electronic projects.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

PLASTIC/EPOXY material ensures durability and reliability for the product, making it a suitable choice for various applications.

Operating Mode: ASYNCHRONOUS

Asynchronous operation allows for independent and flexible reading and writing of data, enhancing the product's efficiency and performance.

Nominal Supply Voltage / Vsup (V): 5

A nominal supply voltage of 5V provides a stable power source for the product, ensuring consistent and reliable operation.

Maximum Operating Temperature: 70 °C

With a maximum operating temperature of 70°C, this product can perform reliably in various environmental conditions.

Maximum Clock Frequency (fCLK): 20 MHz

High maximum clock frequency of 20 MHz allows for fast data transfer and processing speed, making the product suitable for high-performance applications.

Memory Density: 36864 bit

High memory density of 36864 bits allows for storing a large amount of data, making the product suitable for applications requiring extensive data storage.

Technical Specifications

FIFO SN74ACT7204-40N attributes and parameters. Explore more FIFO devices from Texas Instruments

Specs

Maximum Access Time:

40 ns

Maximum Clock Frequency (fCLK):

20 MHz

JESD-30 Code:

R-PDIP-T28

Memory Density:

36864 bit

Memory IC Type:

Memory Width:

9

No. of Terminals:

28

No. of Words:

4096 words

No. of Words Code:

4K

Operating Mode:

ASYNCHRONOUS

Maximum Operating Temperature:

70 Cel

Minimum Operating Temperature:

0 Cel

Organization:

4KX9

Package Body Material:

PLASTIC/EPOXY

Package Code:

DIP

Package Equivalence Code:

DIP28,.6

Package Shape:

Package Style (Meter):

IN-LINE

Peak Reflow Temperature (C):

NOT SPECIFIED

Power Supplies (V):

5

Qualification:

Not Qualified

Maximum Standby Current:

.01 Amp

Sub-Category:

FIFOs

Maximum Supply Current:

95 mA

Nominal Supply Voltage / Vsup (V):

5

Surface Mount:

NO

Technology:

CMOS

Temperature Grade:

Terminal Form:

THROUGH-HOLE

Terminal Pitch:

2.54 mm

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Trade Compliance

SN74ACT7204-40N Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.71

SB

8542.32.00.70

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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