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SN54ACT3641PCBR

Texas Instruments

SN54ACT3641PCBR by Texas Instruments

SN54ACT3641PCBR by Texas Instruments is a FIFO with 1KX36 organization, 20 ns cycle time, and 5V nominal voltage. It is used in military-grade applications requiring fast access times and 3-STATE output characteristics.

Median Price

-

Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 6,951 parts In-Stock

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6,951

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Digiode

USA . 1,178 parts In-Stock

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1,178

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Parana Technologies

USA . 1,863 parts In-Stock

1+ parts

$2.740

100+ parts

-

1k+ parts

$3.224

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1,863

$2.740

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$3.224

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DigiPath Technology Company

USA . 1,553 parts In-Stock

1+ parts

$3.017

100+ parts

$2.776

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-

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1,553

$3.017

$2.776

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ChromeModa Solutions

Germany . 3,322 parts In-Stock

1+ parts

$3.079

100+ parts

$2.525

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3,322

$3.079

$2.525

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IDEA Electronic Components Group

UK . 192 parts In-Stock

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$3.079

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$2.771

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192

$3.079

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$2.771

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AZTECH Wire

Italy . 432 parts In-Stock

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$11.383

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432

$11.383

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One Stop Electronics

USA . 415 parts In-Stock

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$14.000

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$14.000

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Corphita

USA . 1,721 parts In-Stock

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Overview

Elevate your system's performance with the SN54ACT3641PCBR FIFO by Texas Instruments. Known for their top-notch quality and reliability, Texas Instruments delivers cutting-edge technology in every product they create. The SN54ACT3641PCBR is a game-changer in the FIFO category, offering lightning-fast cycle times of 20 ns and an impressive 1KX36 organization. Whether you're working on military-grade applications or high-speed data processing, this FIFO device provides unmatched value, efficiency, and precision to meet all your needs. Experience the Texas Instruments advantage today!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy material makes the product lightweight and durable, suitable for various applications.

Cycle Time: 20 ns

The fast cycle time of 20 ns ensures quick and efficient data processing, making the product suitable for high-speed applications.

Operating Mode: SYNCHRONOUS

The synchronous operating mode ensures that data is processed in a coordinated and synchronized manner, enhancing overall system performance.

Nominal Supply Voltage / Vsup (V): 5

The nominal supply voltage of 5V provides stable power to the product, ensuring reliable operation.

Maximum Operating Temperature: 125 °C

The high maximum operating temperature of 125 °C allows the product to function effectively in harsh environmental conditions.

Technology: CMOS

The CMOS technology used in the product ensures low power consumption and high noise immunity, making it energy-efficient and reliable.

Memory Width: 36

With a memory width of 36, the product can process and store a large amount of data efficiently.

Technical Specifications

FIFO SN54ACT3641PCBR attributes and parameters. Explore more FIFO devices from Texas Instruments

Specs

Maximum Access Time:

15 ns

Additional Features:

MAILBOX

Cycle Time:

20 ns

JESD-30 Code:

S-PQFP-G120

Length:

14 mm

Memory Density:

36864 bit

Memory Width:

36

No. of Functions:

1

No. of Terminals:

120

No. of Words:

1024 words

No. of Words Code:

1K

Operating Mode:

SYNCHRONOUS

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-55 Cel

Organization:

1KX36

Output Characteristics:

3-STATE

Output Enable:

NO

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Shape:

Package Style (Meter):

FLATPACK, LOW PROFILE, FINE PITCH

Parallel or Serial:

PARALLEL

Qualification:

Not Qualified

Maximum Seated Height:

1.6 mm

Maximum Supply Voltage (Vsup):

5.5 V

Minimum Supply Voltage (Vsup):

4.5 V

Nominal Supply Voltage / Vsup (V):

5

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Form:

GULL WING

Terminal Pitch:

.4 mm

Terminal Position:

QUAD

Width:

14 mm

Trade Compliance

SN54ACT3641PCBR Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.71

SB

8542.32.00.70

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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