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SN74ACT7202-50N

Texas Instruments

SN74ACT7202-50N by Texas Instruments

SN74ACT7202-50N by Texas Instruments is a FIFO with 1KX9 organization, 65 ns cycle time, and 15 MHz max clock frequency. Ideal for applications requiring fast synchronous operation in commercial temperature grades.

Median Price

-

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 5,116 parts In-Stock

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Digiode

USA . 4,260 parts In-Stock

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Electronic Expediters

USA . 275 parts In-Stock

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275

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Distributors (Availability)

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Parana Technologies

USA . 391 parts In-Stock

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$3.379

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$3.906

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391

$3.379

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$3.906

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DigiPath Technology Company

USA . 507 parts In-Stock

1+ parts

$3.721

100+ parts

$3.423

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507

$3.721

$3.423

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ChromeModa Solutions

Germany . 5,802 parts In-Stock

1+ parts

$3.797

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$3.114

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$3.797

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IDEA Electronic Components Group

UK . 2,336 parts In-Stock

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$3.797

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$3.417

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2,336

$3.797

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Advanced Electronics

New Zealand . 1,500 parts In-Stock

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$5.348

100+ parts

$5.295

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$5.081

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$5.348

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AZTECH Wire

Italy . 695 parts In-Stock

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$10.252

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One Stop Electronics

USA . 1,123 parts In-Stock

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$16.000

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Corphita

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Overview

Experience seamless data transfer and efficient memory management with the SN74ACT7202-50N FIFO by Texas Instruments. As a leader in semiconductor technology, Texas Instruments ensures top-notch quality and reliability in all their products. This FIFO device is perfect for applications requiring fast and synchronous data processing, offering a reliable solution to optimize system performance. Trust Texas Instruments to deliver cutting-edge technology that enhances your workflow and productivity. Choose the SN74ACT7202-50N for superior performance and unmatched value in data storage and retrieval.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy material makes the product lightweight and durable, ideal for various applications.

Cycle Time: 65 ns

The fast cycle time of 65 ns ensures quick data processing and efficient operation of the FIFO.

Operating Mode: SYNCHRONOUS

The synchronous operation ensures that data is transferred at a fixed rate, enhancing system performance and reliability.

Nominal Supply Voltage / Vsup (V): 5

The nominal supply voltage of 5V ensures compatibility with standard power sources, making it easy to integrate into existing systems.

Maximum Operating Temperature: 70 °C

The high maximum operating temperature of 70°C allows the FIFO to operate in a wide range of environments without overheating.

Memory Width: 9

With a memory width of 9 bits, the FIFO can store and retrieve data efficiently, making it suitable for various data buffering applications.

Maximum Clock Frequency (fCLK): 15 MHz

The high maximum clock frequency of 15 MHz allows for fast data transfer rates and enhances the overall performance of the FIFO.

Technical Specifications

FIFO SN74ACT7202-50N attributes and parameters. Explore more FIFO devices from Texas Instruments

Specs

Maximum Access Time:

50 ns

Additional Features:

RETRANSMIT

Maximum Clock Frequency (fCLK):

15 MHz

Cycle Time:

65 ns

JESD-30 Code:

R-PDIP-T28

Length:

36.32 mm

Memory Density:

9216 bit

Memory IC Type:

Memory Width:

9

No. of Functions:

1

No. of Terminals:

28

No. of Words:

1024 words

No. of Words Code:

1K

Operating Mode:

SYNCHRONOUS

Maximum Operating Temperature:

70 Cel

Minimum Operating Temperature:

0 Cel

Organization:

1KX9

Output Characteristics:

3-STATE

Output Enable:

NO

Package Body Material:

PLASTIC/EPOXY

Package Code:

DIP

Package Equivalence Code:

DIP(UNSPEC)

Package Shape:

Package Style (Meter):

IN-LINE

Parallel or Serial:

PARALLEL

Peak Reflow Temperature (C):

NOT SPECIFIED

Power Supplies (V):

5

Qualification:

Not Qualified

Maximum Seated Height:

5.08 mm

Maximum Standby Current:

.0005 Amp

Sub-Category:

FIFOs

Maximum Supply Current:

80 mA

Maximum Supply Voltage (Vsup):

5.5 V

Minimum Supply Voltage (Vsup):

4.5 V

Nominal Supply Voltage / Vsup (V):

5

Surface Mount:

NO

Technology:

CMOS

Temperature Grade:

Terminal Form:

THROUGH-HOLE

Terminal Pitch:

2.54 mm

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Width:

15.24 mm

Trade Compliance

SN74ACT7202-50N Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.71

SB

8542.32.00.70

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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