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SN74ABT7820-20PHR

Texas Instruments

SN74ABT7820-20PHR by Texas Instruments

SN74ABT7820-20PHR by Texas Instruments is a FIFO with 512x18 organization, 20 ns cycle time, and 5V nominal voltage. It is used in applications requiring synchronous operation, such as data buffering and communication systems.

Median Price

-

Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 9,251 parts In-Stock

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9,251

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Digiode

USA . 613 parts In-Stock

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613

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Parana Technologies

USA . 2,141 parts In-Stock

1+ parts

$5.091

100+ parts

-

1k+ parts

$5.669

10k+ parts

-

2,141

$5.091

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$5.669

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DigiPath Technology Company

USA . 918 parts In-Stock

1+ parts

$5.606

100+ parts

$5.157

1k+ parts

-

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918

$5.606

$5.157

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ChromeModa Solutions

Germany . 6,344 parts In-Stock

1+ parts

$5.720

100+ parts

$4.690

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-

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6,344

$5.720

$4.690

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IDEA Electronic Components Group

UK . 2,159 parts In-Stock

1+ parts

$5.720

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-

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$5.148

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2,159

$5.720

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$5.148

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One Stop Electronics

USA . 622 parts In-Stock

1+ parts

$13.000

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622

$13.000

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AZTECH Wire

Italy . 765 parts In-Stock

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$13.167

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765

$13.167

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Corphita

USA . 667 parts In-Stock

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Overview

Unlock seamless data transfer and storage with the Texas Instruments SN74ABT7820-20PHR FIFO. Crafted with precision using high-quality materials and cutting-edge BICMOS technology, this FIFO device guarantees reliable performance in a wide range of applications. Say goodbye to data bottlenecking and hello to efficient data handling with its lightning-fast cycle time of 20 ns. Whether you're working on industrial automation, telecommunications, or computing systems, this FIFO's 512x18 memory organization, 3-STATE output characteristics, and 80 terminals ensure optimal functionality. Trust Texas Instruments to deliver unmatched quality and value, revolutionizing your data processing experience.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The plastic/epoxy material used in the package body makes the product lightweight and durable.

Cycle Time: 20 ns

The fast cycle time of 20 ns ensures quick data access and processing, making the product efficient.

Nominal Supply Voltage / Vsup (V): 5

The 5V supply voltage ensures stable and efficient operation of the product.

Organization: 512X18

With a large organization of 512 words by 18 memory width, the product offers ample storage capacity for data.

Technology: BICMOS

Utilizing BICMOS technology ensures a good balance between speed and power efficiency in the product.

Output Enable: YES

The presence of output enable feature allows for control over the output data, adding flexibility to the product.

Technical Specifications

FIFO SN74ABT7820-20PHR attributes and parameters. Explore more FIFO devices from Texas Instruments

Specs

Maximum Access Time:

13.5 ns

Additional Features:

BYPASS XCVR

Cycle Time:

20 ns

JESD-30 Code:

S-PQFP-G80

Length:

14 mm

Memory Density:

9216 bit

Memory Width:

18

No. of Functions:

1

No. of Terminals:

80

No. of Words:

512 words

No. of Words Code:

512

Operating Mode:

SYNCHRONOUS

Maximum Operating Temperature:

70 Cel

Minimum Operating Temperature:

0 Cel

Organization:

512X18

Output Characteristics:

3-STATE

Output Enable:

YES

Package Body Material:

PLASTIC/EPOXY

Package Code:

QFP

Package Shape:

Package Style (Meter):

FLATPACK

Parallel or Serial:

PARALLEL

Qualification:

Not Qualified

Maximum Seated Height:

3.1 mm

Maximum Supply Voltage (Vsup):

5.5 V

Minimum Supply Voltage (Vsup):

4.5 V

Nominal Supply Voltage / Vsup (V):

5

Surface Mount:

YES

Technology:

BICMOS

Temperature Grade:

Terminal Form:

GULL WING

Terminal Pitch:

.8 mm

Terminal Position:

QUAD

Width:

14 mm

Trade Compliance

SN74ABT7820-20PHR Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.71

SB

8542.32.00.70

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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