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SN74ABT3613PQ

Texas Instruments

SN74ABT3613PQ by Texas Instruments

SN74ABT3613PQ by Texas Instruments is a FIFO with 64x36 organization, operating at 5V. It has a cycle time of 15ns and max access time of 10ns, suitable for synchronous applications. This PLASTIC/EPOXY package with GULL WING terminals is ideal for commercial temperature grade environments.

Median Price

-

Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 6,878 parts In-Stock

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Digiode

USA . 3,168 parts In-Stock

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3,168

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Distributors (Availability)

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Parana Technologies

USA . 1,210 parts In-Stock

1+ parts

$4.276

100+ parts

-

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$4.704

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1,210

$4.276

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$4.704

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DigiPath Technology Company

USA . 1,683 parts In-Stock

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$4.708

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$4.708

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IDEA Electronic Components Group

UK . 1,054 parts In-Stock

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$4.804

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$4.324

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1,054

$4.804

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$4.324

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ChromeModa Solutions

Germany . 856 parts In-Stock

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$4.804

100+ parts

$3.939

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856

$4.804

$3.939

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AZTECH Wire

Italy . 649 parts In-Stock

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$5.703

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649

$5.703

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One Stop Electronics

USA . 610 parts In-Stock

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$13.000

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610

$13.000

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Corphita

USA . 4,492 parts In-Stock

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Overview

Unlock seamless data transfer and faster processing with the SN74ABT3613PQ FIFO by Texas Instruments. Backed by a renowned manufacturer, this FIFO device offers reliable performance and versatility for a range of applications. With a cycle time of just 15 ns, synchronous operation, and a compact square package design, this product is designed to optimize efficiency and productivity. Experience the value of high-quality technology with the SN74ABT3613PQ FIFO from Texas Instruments.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The plastic/epoxy material used in the package body provides durability and protection for the components inside.

Cycle Time: 15 ns

The fast cycle time of 15 ns allows for quick and efficient data processing and retrieval.

Operating Mode: SYNCHRONOUS

The synchronous operating mode enables precise coordination and timing within the system, ensuring accurate data transfer.

Nominal Supply Voltage / Vsup (V): 5

The 5V supply voltage is commonly used and readily available, making it easy to power the device.

Technology: BICMOS

The BICMOS technology combines the advantages of both bipolar and CMOS technologies, offering high performance and low power consumption.

Memory Density: 2304 bit

The high memory density of 2304 bits allows for storing a large amount of data efficiently.

Output Enable: YES

The output enable feature allows for controlling the output data flow, providing flexibility in operation.

Maximum Access Time: 10 ns

The fast maximum access time of 10 ns ensures quick access to data when needed.

Technical Specifications

FIFO SN74ABT3613PQ attributes and parameters. Explore more FIFO devices from Texas Instruments

Specs

Maximum Access Time:

10 ns

Cycle Time:

15 ns

JESD-30 Code:

S-PQFP-G132

Length:

24.13 mm

Memory Density:

2304 bit

Memory Width:

36

No. of Functions:

1

No. of Terminals:

132

No. of Words:

64 words

No. of Words Code:

64

Operating Mode:

SYNCHRONOUS

Maximum Operating Temperature:

70 Cel

Minimum Operating Temperature:

0 Cel

Organization:

64X36

Output Enable:

YES

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Shape:

Package Style (Meter):

FLATPACK, BUMPER

Parallel or Serial:

PARALLEL

Qualification:

Not Qualified

Maximum Seated Height:

4.572 mm

Maximum Supply Voltage (Vsup):

5.5 V

Minimum Supply Voltage (Vsup):

4.5 V

Nominal Supply Voltage / Vsup (V):

5

Surface Mount:

YES

Technology:

BICMOS

Temperature Grade:

Terminal Form:

GULL WING

Terminal Pitch:

.635 mm

Terminal Position:

QUAD

Width:

24.13 mm

Trade Compliance

SN74ABT3613PQ Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.71

SB

8542.32.00.70

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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