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SN74ACT3622-30PQR

Texas Instruments

SN74ACT3622-30PQR by Texas Instruments

SN74ACT3622-30PQR by Texas Instruments is a FIFO with 256x36 organization, 30 ns cycle time, and 5V nominal voltage. It is used in applications requiring fast synchronous operation and 3-STATE output characteristics. Ideal for commercial temperature grade environments.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 5,493 parts In-Stock

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5,493

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Digiode

USA . 228 parts In-Stock

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228

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Distributors (Availability)

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Parana Technologies

USA . 168 parts In-Stock

1+ parts

$4.821

100+ parts

-

1k+ parts

$5.335

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168

$4.821

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$5.335

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DigiPath Technology Company

USA . 795 parts In-Stock

1+ parts

$5.309

100+ parts

$4.884

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795

$5.309

$4.884

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ChromeModa Solutions

Germany . 2,450 parts In-Stock

1+ parts

$5.417

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$4.442

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2,450

$5.417

$4.442

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IDEA Electronic Components Group

UK . 1,380 parts In-Stock

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$5.417

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$4.875

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1,380

$5.417

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$4.875

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AZTECH Wire

Italy . 503 parts In-Stock

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$9.430

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503

$9.430

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One Stop Electronics

USA . 1,048 parts In-Stock

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$11.000

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1,048

$11.000

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Corphita

USA . 606 parts In-Stock

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Overview

Experience seamless data transfer and reliable performance with the SN74ACT3622-30PQR by Texas Instruments. As a leading manufacturer in the industry, Texas Instruments delivers top-quality FIFO products that cater to a wide range of applications. With a cycle time of 30 ns and an organization of 256X36, this product ensures efficient operation in synchronous mode. Enjoy the convenience of 3-STATE output characteristics and a wide operating temperature range. Elevate your projects with the SN74ACT3622-30PQR and see the difference it makes in your designs.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material provides durability and protection for the internal components of the FIFO, making it suitable for various applications.

Cycle Time: 30 ns

Fast cycle time ensures quick data access and processing, making the FIFO efficient for high-speed operations.

Nominal Supply Voltage / Vsup (V): 5

Stable supply voltage allows consistent performance of the FIFO, reducing the risk of data corruption or errors.

Organization: 256X36

With a large organization size, this FIFO can store and manage a significant amount of data efficiently.

Technology: CMOS

CMOS technology offers low power consumption and high noise immunity, making this FIFO energy-efficient and reliable.

Output Enable: YES

The output enable feature allows control over the data output, enhancing flexibility and functionality in data retrieval.

Technical Specifications

FIFO SN74ACT3622-30PQR attributes and parameters. Explore more FIFO devices from Texas Instruments

Specs

Maximum Access Time:

15 ns

Additional Features:

MAILBOX

Cycle Time:

30 ns

JESD-30 Code:

S-PQFP-G132

Length:

24.13 mm

Memory Density:

9216 bit

Memory Width:

36

No. of Functions:

1

No. of Terminals:

132

No. of Words:

256 words

No. of Words Code:

256

Operating Mode:

SYNCHRONOUS

Maximum Operating Temperature:

70 Cel

Minimum Operating Temperature:

0 Cel

Organization:

256X36

Output Characteristics:

3-STATE

Output Enable:

YES

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Shape:

Package Style (Meter):

FLATPACK, BUMPER

Parallel or Serial:

PARALLEL

Qualification:

Not Qualified

Maximum Seated Height:

4.57 mm

Maximum Supply Voltage (Vsup):

5.5 V

Minimum Supply Voltage (Vsup):

4.5 V

Nominal Supply Voltage / Vsup (V):

5

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Form:

GULL WING

Terminal Pitch:

.635 mm

Terminal Position:

QUAD

Width:

24.13 mm

Trade Compliance

SN74ACT3622-30PQR Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.71

SB

8542.32.00.70

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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