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SN54ACT7881HVR

Texas Instruments

SN54ACT7881HVR by Texas Instruments

SN54ACT7881HVR by Texas Instruments is a 1Kx18 FIFO with 20ns cycle time, operating at 5V. Suitable for military applications, it offers synchronous operation, parallel interface, and output enable feature.

Median Price

-

Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 5,790 parts In-Stock

1+ parts

-

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5,790

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Digiode

USA . 1,645 parts In-Stock

1+ parts

-

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-

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1,645

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Parana Technologies

USA . 342 parts In-Stock

1+ parts

$4.059

100+ parts

-

1k+ parts

$4.524

10k+ parts

-

342

$4.059

-

$4.524

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DigiPath Technology Company

USA . 2,175 parts In-Stock

1+ parts

$4.470

100+ parts

$4.112

1k+ parts

-

10k+ parts

-

2,175

$4.470

$4.112

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ChromeModa Solutions

Germany . 4,445 parts In-Stock

1+ parts

$4.561

100+ parts

$3.740

1k+ parts

-

10k+ parts

-

4,445

$4.561

$3.740

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IDEA Electronic Components Group

UK . 1,569 parts In-Stock

1+ parts

$4.561

100+ parts

-

1k+ parts

$4.105

10k+ parts

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1,569

$4.561

-

$4.105

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AZTECH Wire

Italy . 403 parts In-Stock

1+ parts

$19.000

100+ parts

-

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403

$19.000

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One Stop Electronics

USA . 1,520 parts In-Stock

1+ parts

$21.000

100+ parts

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1,520

$21.000

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Corphita

USA . 81 parts In-Stock

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81

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Overview

Experience exceptional performance and reliability with the SN54ACT7881HVR FIFO from Texas Instruments. As a leading manufacturer in the industry, Texas Instruments delivers top-quality products that exceed expectations. Ideal for a wide range of applications, this FIFO offers seamless data storage and retrieval, ensuring smooth operation in your system. With a focus on value and efficiency, this product provides unmatched benefits to our customers, making it the perfect choice for your project needs. Trust Texas Instruments for superior solutions that elevate your design to the next level.

Feature Benefit Bullets

Package Body Material: CERAMIC, GLASS-SEALED

The ceramic, glass-sealed package body material ensures durability and reliability, making it suitable for harsh environments.

Cycle Time: 20 ns

The fast cycle time of 20 ns allows for efficient data processing and quick access to stored information.

Nominal Supply Voltage / Vsup (V): 5

The nominal supply voltage of 5V provides stable power to the device for consistent performance.

Operating Mode: SYNCHRONOUS

The synchronous operating mode ensures data is processed in a synchronized manner, reducing the likelihood of errors.

Memory Density: 18432 bit

With a high memory density of 18432 bits, this FIFO product can store a large amount of data efficiently.

Maximum Operating Temperature: 125 °C

The high maximum operating temperature of 125°C allows the product to function reliably even in elevated temperature environments.

Technical Specifications

FIFO SN54ACT7881HVR attributes and parameters. Explore more FIFO devices from Texas Instruments

Specs

Maximum Access Time:

13 ns

Cycle Time:

20 ns

JESD-30 Code:

S-GQFP-F68

Length:

12.51 mm

Memory Density:

18432 bit

Memory Width:

18

No. of Functions:

1

No. of Terminals:

68

No. of Words:

1024 words

No. of Words Code:

1K

Operating Mode:

SYNCHRONOUS

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-55 Cel

Organization:

1KX18

Output Enable:

YES

Package Body Material:

CERAMIC, GLASS-SEALED

Package Code:

QFF

Package Shape:

Package Style (Meter):

FLATPACK

Parallel or Serial:

PARALLEL

Qualification:

Not Qualified

Maximum Seated Height:

3.86 mm

Maximum Supply Voltage (Vsup):

5.5 V

Minimum Supply Voltage (Vsup):

4.5 V

Nominal Supply Voltage / Vsup (V):

5

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Form:

FLAT

Terminal Pitch:

.635 mm

Terminal Position:

QUAD

Width:

12.51 mm

Trade Compliance

SN54ACT7881HVR Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.71

SB

8542.32.00.70

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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