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SN54ACT3641HFP

Texas Instruments

SN54ACT3641HFP by Texas Instruments

SN54ACT3641HFP by Texas Instruments is a 1Kx36 CMOS FIFO memory IC with 50 MHz clock frequency, 20 ns cycle time, and operates at 5V. It is used in military-grade applications requiring fast data storage and retrieval with a memory density of 36864 bits.

Median Price

-

Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 5,732 parts In-Stock

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Digiode

USA . 2,800 parts In-Stock

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2,800

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Distributors (Availability)

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Parana Technologies

USA . 1,846 parts In-Stock

1+ parts

$3.164

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$3.684

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1,846

$3.164

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$3.684

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DigiPath Technology Company

USA . 1,581 parts In-Stock

1+ parts

$3.484

100+ parts

$3.205

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1,581

$3.484

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ChromeModa Solutions

Germany . 1,452 parts In-Stock

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$3.555

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$2.915

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1,452

$3.555

$2.915

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IDEA Electronic Components Group

UK . 574 parts In-Stock

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$3.555

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$3.200

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574

$3.555

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AZTECH Wire

Italy . 546 parts In-Stock

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$5.662

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546

$5.662

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One Stop Electronics

USA . 434 parts In-Stock

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$15.000

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Corphita

USA . 2,154 parts In-Stock

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Overview

Experience unparalleled performance and reliability with the Texas Instruments SN54ACT3641HFP, a high-quality FIFO memory IC designed for demanding military applications. This cutting-edge technology offers a seamless synchronous operation, ensuring fast data transfer speeds up to 50 MHz. With a generous memory density of 36,864 bits and a wide operating temperature range from -55°C to 125°C, this device is ideal for mission-critical systems where precision and efficiency are paramount. Trust Texas Instruments for superior semiconductor solutions that deliver exceptional value and peace of mind.

Feature Benefit Bullets

Package Body Material: CERAMIC, GLASS-SEALED

The ceramic and glass-sealed package body material provides durability and protection for the internal components, ensuring reliability in various environmental conditions.

Cycle Time: 20 ns

The fast cycle time of 20 ns allows for efficient data transfer and processing, making this FIFO a high-performance option for time-sensitive applications.

Operating Mode: SYNCHRONOUS

The synchronous operating mode ensures precise timing and coordination of data transfers, reducing the risk of errors and improving overall system performance.

Nominal Supply Voltage: 5 V

The nominal supply voltage of 5 V provides compatibility with standard power sources, making it easy to integrate this FIFO into existing systems.

Maximum Operating Temperature: 125 °C

With a high maximum operating temperature of 125°C, this FIFO can withstand extended periods of use without risking overheating or performance degradation.

Memory IC Type: BI-DIRECTIONAL FIFO

The bi-directional FIFO design allows for simultaneous read and write operations, enhancing data throughput and efficiency in complex data processing tasks.

Technical Specifications

FIFO SN54ACT3641HFP attributes and parameters. Explore more FIFO devices from Texas Instruments

Specs

Maximum Access Time:

15 ns

Maximum Clock Frequency (fCLK):

50 MHz

Cycle Time:

20 ns

JESD-30 Code:

S-GQFP-F132

Length:

24.13 mm

Memory Density:

36864 bit

Memory IC Type:

Memory Width:

36

No. of Functions:

1

No. of Terminals:

132

No. of Words:

1024 words

No. of Words Code:

1K

Operating Mode:

SYNCHRONOUS

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-55 Cel

Organization:

1KX36

Output Enable:

YES

Package Body Material:

CERAMIC, GLASS-SEALED

Package Code:

QFF

Package Equivalence Code:

QFL132,.95SQ,25

Package Shape:

Package Style (Meter):

FLATPACK

Parallel or Serial:

PARALLEL

Peak Reflow Temperature (C):

NOT SPECIFIED

Power Supplies (V):

5

Qualification:

Not Qualified

Maximum Seated Height:

3.81 mm

Sub-Category:

FIFOs

Maximum Supply Voltage (Vsup):

5.5 V

Minimum Supply Voltage (Vsup):

4.5 V

Nominal Supply Voltage / Vsup (V):

5

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Form:

FLAT

Terminal Pitch:

.635 mm

Terminal Position:

QUAD

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Width:

24.13 mm

Trade Compliance

SN54ACT3641HFP Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.71

SB

8542.32.00.70

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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