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SN74ACT2236-60FNR

Texas Instruments

SN74ACT2236-60FNR by Texas Instruments

SN74ACT2236-60FNR by Texas Instruments is a FIFO chip with 2Kx9 organization, operating at 5V. It features a cycle time of 59.88ns, synchronous operation, and 3-STATE output characteristics. This chip is ideal for applications requiring fast data storage and retrieval in commercial temperature environments.

Median Price

-

Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 5,128 parts In-Stock

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5,128

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Digiode

USA . 1,912 parts In-Stock

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1,912

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Parana Technologies

USA . 1,230 parts In-Stock

1+ parts

$5.014

100+ parts

-

1k+ parts

$5.569

10k+ parts

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1,230

$5.014

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$5.569

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DigiPath Technology Company

USA . 17 parts In-Stock

1+ parts

$5.521

100+ parts

$5.080

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-

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17

$5.521

$5.080

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ChromeModa Solutions

Germany . 4,804 parts In-Stock

1+ parts

$5.634

100+ parts

$4.620

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4,804

$5.634

$4.620

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IDEA Electronic Components Group

UK . 2,143 parts In-Stock

1+ parts

$5.634

100+ parts

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$5.071

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2,143

$5.634

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$5.071

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AZTECH Wire

Italy . 636 parts In-Stock

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$13.695

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636

$13.695

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One Stop Electronics

USA . 424 parts In-Stock

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$20.000

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424

$20.000

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Corphita

USA . 1,714 parts In-Stock

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Overview

Unlock the power of seamless data transfer with the SN74ACT2236-60FNR by Texas Instruments. This FIFO chip boasts unmatched quality and reliability, backed by the trusted name of TI. Perfect for a wide range of applications, this chip offers lightning-fast cycle times and synchronous operation, making it ideal for demanding environments. With 3-STATE output characteristics and a compact chip carrier package style, this versatile component delivers exceptional value and performance. Upgrade your systems today with the SN74ACT2236-60FNR and experience the difference for yourself.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Durable material that can withstand usage in various environments.

Surface Mount: YES

Easy to install on circuit boards.

Cycle Time: 59.88 ns

Fast operation for efficient data transfer.

Operating Mode: SYNCHRONOUS

Synchronized operation for better performance.

Nominal Supply Voltage / Vsup (V): 5

Stable voltage supply for reliable operation.

No. of Terminals: 44

Sufficient terminals for connectivity.

Maximum Operating Temperature: 70 °C

Can operate in high temperature environments.

Organization: 2KX9

Organized memory storage for efficient data access.

Output Characteristics: 3-STATE

Ability to drive output in three states for flexibility.

Width: 16.5862 mm

Compact size for space-saving installation.

Minimum Supply Voltage (Vsup): 4.5 V

Can operate at low voltage for energy efficiency.

Length: 16.5862 mm

Compact size for space-saving installation.

Technology: CMOS

CMOS technology for low power consumption.

Parallel or Serial: PARALLEL

Parallel operation for simultaneous data processing.

No. of Words: 2048 words

Sufficient memory capacity for storing data.

Memory Width: 9

Wide memory width for data storage.

No. of Words Code: 2K

Code to represent number of words for easy identification.

Output Enable: YES

Output enable feature for controlling data output.

Maximum Access Time: 45 ns

Fast access time for quick data retrieval.

Technical Specifications

FIFO SN74ACT2236-60FNR attributes and parameters. Explore more FIFO devices from Texas Instruments

Specs

Maximum Access Time:

45 ns

Additional Features:

IT CAN OPERATES ASYNCHRONOUS MODE ALSO

Cycle Time:

59.88 ns

JESD-30 Code:

S-PQCC-J44

Length:

16.5862 mm

Memory Density:

18432 bit

Memory Width:

9

No. of Functions:

1

No. of Terminals:

44

No. of Words:

2048 words

No. of Words Code:

2K

Operating Mode:

SYNCHRONOUS

Maximum Operating Temperature:

70 Cel

Minimum Operating Temperature:

0 Cel

Organization:

2KX9

Output Characteristics:

3-STATE

Output Enable:

YES

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Shape:

Package Style (Meter):

CHIP CARRIER

Parallel or Serial:

PARALLEL

Qualification:

Not Qualified

Maximum Seated Height:

4.57 mm

Maximum Supply Voltage (Vsup):

5.5 V

Minimum Supply Voltage (Vsup):

4.5 V

Nominal Supply Voltage / Vsup (V):

5

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Form:

J BEND

Terminal Pitch:

1.27 mm

Terminal Position:

QUAD

Width:

16.5862 mm

Trade Compliance

SN74ACT2236-60FNR Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.71

SB

8542.32.00.70

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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