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SN74ACT7203L-50DV

Texas Instruments

SN74ACT7203L-50DV by Texas Instruments

SN74ACT7203L-50DV by Texas Instruments is a FIFO with 2Kx9 organization, 65ns cycle time, and 15MHz clock frequency. Ideal for parallel applications requiring fast data transfer at temperatures b/w 0-70°C.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 4,365 parts In-Stock

1+ parts

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4,365

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Digiode

USA . 172 parts In-Stock

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172

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Parana Technologies

USA . 494 parts In-Stock

1+ parts

$2.946

100+ parts

-

1k+ parts

$3.446

10k+ parts

-

494

$2.946

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$3.446

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DigiPath Technology Company

USA . 1,258 parts In-Stock

1+ parts

$3.244

100+ parts

$2.984

1k+ parts

-

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1,258

$3.244

$2.984

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ChromeModa Solutions

Germany . 5,674 parts In-Stock

1+ parts

$3.310

100+ parts

$2.714

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-

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5,674

$3.310

$2.714

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IDEA Electronic Components Group

UK . 1,825 parts In-Stock

1+ parts

$3.310

100+ parts

-

1k+ parts

$2.979

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1,825

$3.310

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$2.979

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AZTECH Wire

Italy . 802 parts In-Stock

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$7.310

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802

$7.310

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One Stop Electronics

USA . 1,031 parts In-Stock

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$28.000

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1,031

$28.000

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Corphita

USA . 1,468 parts In-Stock

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1,468

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Overview

Experience seamless data transfer and reliable performance with the SN74ACT7203L-50DV by Texas Instruments. As a leading manufacturer in the industry, Texas Instruments guarantees top-notch quality and innovation in their FIFO products. This versatile device is perfect for a wide range of applications, providing customers with a cost-effective solution for their data storage needs. Trust in the value and benefits this product offers, from its fast cycle time to its wide operating temperature range. Upgrade your system with the SN74ACT7203L-50DV today and experience unparalleled efficiency and productivity.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The plastic/epoxy material used in the package body makes the product lightweight and durable, ideal for use in a variety of applications.

Cycle Time: 65 ns

The fast cycle time of 65 ns ensures efficient and quick data processing, making this FIFO a reliable choice for high-speed applications.

Operating Mode: ASYNCHRONOUS

The asynchronous operating mode allows for independent data transfers, providing flexibility and versatility in different system configurations.

Nominal Supply Voltage / Vsup (V): 5

The nominal supply voltage of 5V ensures compatibility with a wide range of systems and power sources.

Maximum Operating Temperature: 70 °C

With a maximum operating temperature of 70°C, this FIFO can withstand high temperatures and operate reliably in various environments.

Memory Width: 9

The memory width of 9 bits allows for efficient data storage and retrieval, making this FIFO suitable for applications requiring a moderate amount of data processing.

Maximum Clock Frequency (fCLK): 15 MHz

The high maximum clock frequency of 15 MHz enables fast data processing and transfer rates, making this FIFO ideal for time-sensitive applications.

Memory IC Type: OTHER FIFO

The use of a FIFO memory IC ensures efficient data handling and storage, making this product a reliable choice for applications requiring seamless data flow.

Technical Specifications

FIFO SN74ACT7203L-50DV attributes and parameters. Explore more FIFO devices from Texas Instruments

Specs

Maximum Access Time:

50 ns

Maximum Clock Frequency (fCLK):

15 MHz

Cycle Time:

65 ns

JESD-30 Code:

R-PDSO-G28

Length:

18.365 mm

Memory Density:

18432 bit

Memory IC Type:

Memory Width:

9

No. of Functions:

1

No. of Terminals:

28

No. of Words:

2048 words

No. of Words Code:

2K

Operating Mode:

ASYNCHRONOUS

Maximum Operating Temperature:

70 Cel

Minimum Operating Temperature:

0 Cel

Organization:

2KX9

Output Characteristics:

3-STATE

Output Enable:

NO

Package Body Material:

PLASTIC/EPOXY

Package Code:

SOP

Package Equivalence Code:

SOP28,.45

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Parallel or Serial:

PARALLEL

Peak Reflow Temperature (C):

NOT SPECIFIED

Power Supplies (V):

5

Qualification:

Not Qualified

Maximum Seated Height:

3.05 mm

Maximum Standby Current:

.002 Amp

Sub-Category:

FIFOs

Maximum Supply Current:

120 mA

Maximum Supply Voltage (Vsup):

5.5 V

Minimum Supply Voltage (Vsup):

4.5 V

Nominal Supply Voltage / Vsup (V):

5

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Form:

GULL WING

Terminal Pitch:

1.27 mm

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Width:

8.765 mm

Trade Compliance

SN74ACT7203L-50DV Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.71

SB

8542.32.00.70

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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