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CD54HC40105F3A

Texas Instruments

CD54HC40105F3A by Texas Instruments

CD54HC40105F3A by Texas Instruments is a 16x4 FIFO with 500ns cycle time, operating at 4.5V. It has 3-STATE output characteristics and supports up to 10MHz clock frequency. Ideal for military applications due to its MILITARY temperature grade and through-hole terminal form.

Median Price

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Lifecycle Status

Suppliers In-Stock

4

In-Stock Inventory

1k+

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Chip Stock

USA . 4,500 parts In-Stock

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Vyrian

USA . 3,128 parts In-Stock

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Digiode

USA . 398 parts In-Stock

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398

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Prism Electronics

USA . 10 parts In-Stock

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Native Components

USA . 30 parts In-Stock

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$0.701

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30

$0.701

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Northwest PG Solutions

USA . 922 parts In-Stock

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$0.771

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Parana Technologies

USA . 836 parts In-Stock

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$4.074

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$4.535

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836

$4.074

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ChromeModa Solutions

Germany . 2,509 parts In-Stock

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$4.577

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$3.753

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$4.577

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IDEA Electronic Components Group

UK . 2,233 parts In-Stock

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$4.577

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$4.119

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AZTECH Wire

Italy . 827 parts In-Stock

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$8.331

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One Stop Electronics

USA . 509 parts In-Stock

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$19.000

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$19.000

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Microchip USA

USA . 4,485 parts In-Stock

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Supply Digital

USA . 2,317 parts In-Stock

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Corphita

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DigiPath Technology Company

USA . 600 parts In-Stock

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$4.127

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Perfect Parts

USA . 68 parts In-Stock

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Overview

Experience unparalleled reliability and performance with the Texas Instruments CD54HC40105F3A FIFO memory IC. Known for their quality manufacturing, Texas Instruments delivers cutting-edge technology that meets the highest industry standards. This versatile device is ideal for a wide range of applications, providing seamless data storage and retrieval in synchronous operating modes. With a maximum clock frequency of 10 MHz and a temperature grade of MILITARY, this FIFO memory IC offers exceptional value and benefits to customers looking for efficient data management solutions. Trust Texas Instruments to deliver top-notch products that exceed expectations.

Feature Benefit Bullets

Package Body Material: CERAMIC, GLASS-SEALED

This material provides durability and protection for the components inside, making the product reliable in various environments.

Cycle Time: 500 ns

The fast cycle time ensures efficient data transfer and processing, making the product suitable for high-speed applications.

Operating Mode: SYNCHRONOUS

Synchronous operation allows for precise timing and coordination, ensuring data integrity and reliability.

Temperature Grade: MILITARY

The military-grade temperature tolerance ensures the product can withstand harsh conditions and operate reliably in extreme environments.

Memory Density: 64 bit

With a high memory density, the product can store a large amount of data efficiently, making it suitable for applications requiring extensive data storage.

Technical Specifications

FIFO CD54HC40105F3A attributes and parameters. Explore more FIFO devices from Texas Instruments

Specs

Maximum Access Time:

2250 ns

Maximum Clock Frequency (fCLK):

10 MHz

Cycle Time:

500 ns

JESD-30 Code:

R-GDIP-T16

JESD-609 Code:

e0

Length:

21.34 mm

Memory Density:

64 bit

Memory IC Type:

Memory Width:

4

No. of Functions:

1

No. of Terminals:

16

No. of Words:

16 words

No. of Words Code:

16

Operating Mode:

SYNCHRONOUS

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-55 Cel

Organization:

16X4

Output Characteristics:

3-STATE

Output Enable:

YES

Package Body Material:

CERAMIC, GLASS-SEALED

Package Code:

DIP

Package Equivalence Code:

DIP16,.3

Package Shape:

Package Style (Meter):

IN-LINE

Parallel or Serial:

PARALLEL

Power Supplies (V):

2/6

Qualification:

Not Qualified

Screening Level:

38535Q/M;38534H;883B

Maximum Seated Height:

5.08 mm

Sub-Category:

FIFOs

Maximum Supply Voltage (Vsup):

6 V

Minimum Supply Voltage (Vsup):

2 V

Nominal Supply Voltage / Vsup (V):

4.5

Surface Mount:

NO

Technology:

CMOS

Temperature Grade:

Terminal Finish:

TIN LEAD

Terminal Form:

THROUGH-HOLE

Terminal Pitch:

2.54 mm

Terminal Position:

DUAL

Width:

7.62 mm

Trade Compliance

CD54HC40105F3A Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.39.00.01

SB

8542.39.00.00

NSN

5962-01-338-1260, 5962013381260

NIIN

013381260

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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