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SN74ACT2227DWR

Texas Instruments

SN74ACT2227DWR by Texas Instruments

SN74ACT2227DWR by Texas Instruments is a FIFO memory IC with 64-bit memory density and 64x1 organization. It operates at a nominal voltage of 5V, has a cycle time of 16.67ns, and features synchronous operation. This small outline package is ideal for industrial applications requiring fast access times and low standby current consumption.

Median Price

$3.690

Lifecycle Status

Suppliers In-Stock

8

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Rochester

USA . 2,000 parts In-Stock

1+ parts

-

100+ parts

$3.200

1k+ parts

$2.860

10k+ parts

$2.700

2,000

-

$3.200

$2.860

$2.700

DigiKey

USA . 2,000 parts In-Stock

1+ parts

-

100+ parts

$3.690

1k+ parts

-

10k+ parts

-

2,000

-

$3.690

-

-

Verical

USA . 2,000 parts In-Stock

1+ parts

-

100+ parts

$4.000

1k+ parts

$3.575

10k+ parts

$3.375

2,000

-

$4.000

$3.575

$3.375

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 1,978 parts In-Stock

1+ parts

$3.372

100+ parts

-

1k+ parts

-

10k+ parts

-

1,978

$3.372

-

-

-

Vyrian

USA . 3,256 parts In-Stock

1+ parts

$3.550

100+ parts

-

1k+ parts

-

10k+ parts

-

3,256

$3.550

-

-

-

American Microsemiconductor Inc.

USA . 1,048 parts In-Stock

1+ parts

$5.850

100+ parts

-

1k+ parts

-

10k+ parts

-

1,048

$5.850

-

-

-

Bristol Electronics

USA . 348 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

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348

-

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-

-

Martec Srl

Italy . 174 parts In-Stock

1+ parts

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174

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Parana Technologies

USA . 557 parts In-Stock

1+ parts

$2.492

100+ parts

-

1k+ parts

$2.982

10k+ parts

-

557

$2.492

-

$2.982

-

DigiPath Technology Company

USA . 614 parts In-Stock

1+ parts

$2.744

100+ parts

$2.524

1k+ parts

-

10k+ parts

-

614

$2.744

$2.524

-

-

ChromeModa Solutions

Germany . 5,888 parts In-Stock

1+ parts

$2.800

100+ parts

$2.296

1k+ parts

-

10k+ parts

-

5,888

$2.800

$2.296

-

-

IDEA Electronic Components Group

UK . 447 parts In-Stock

1+ parts

$2.800

100+ parts

-

1k+ parts

$2.520

10k+ parts

-

447

$2.800

-

$2.520

-

Ampacity Inc.

Singapore . 1,523 parts In-Stock

1+ parts

$3.020

100+ parts

-

1k+ parts

-

10k+ parts

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1,523

$3.020

-

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Corphita

USA . 2,422 parts In-Stock

1+ parts

$3.195

100+ parts

-

1k+ parts

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10k+ parts

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2,422

$3.195

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-

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Microchip USA

USA . 416 parts In-Stock

1+ parts

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416

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Perfect Parts

USA . 195 parts In-Stock

1+ parts

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195

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Overview

Unlock seamless data transfer and optimal performance with the SN74ACT2227DWR FIFO by Texas Instruments. Crafted with precision and reliability, this innovative device offers a myriad of applications in various industries. With a focus on quality and efficiency, Texas Instruments delivers value by providing customers with a product that enhances productivity and streamlines operations. Say goodbye to data bottlenecks and hello to smooth, uninterrupted data flow with the SN74ACT2227DWR.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Plastic and epoxy materials provide durability and protection for the internal components of the FIFO, ensuring a longer lifespan.

Cycle Time: 16.67 ns

The fast cycle time of 16.67 ns allows for quick and efficient data transfer within the FIFO, making it suitable for high-speed applications.

Operating Mode: SYNCHRONOUS

Synchronous operation ensures that data is processed and transferred at precise intervals, improving overall system performance and reliability.

Nominal Supply Voltage / Vsup (V): 5

The nominal supply voltage of 5V provides stable power to the FIFO, ensuring consistent operation without risk of voltage fluctuations.

Maximum Operating Temperature: 85 °C

With a maximum operating temperature of 85°C, this FIFO can withstand high-temperature environments, making it suitable for industrial applications.

Technology: CMOS

The CMOS technology used in this FIFO provides low power consumption and high noise immunity, resulting in reliable and efficient data storage and retrieval.

Output Enable: YES

The output enable feature allows for control over when data is output from the FIFO, providing flexibility in data processing and transfer.

Maximum Standby Current: 0.0004 Amp

With a low standby current of 0.0004 Amp, this FIFO is energy-efficient and suitable for battery-powered devices or applications requiring minimal power consumption in standby mode.

Maximum Access Time: 9 ns

The fast maximum access time of 9 ns ensures quick access to stored data in the FIFO, improving overall system performance and responsiveness.

Technical Specifications

FIFO SN74ACT2227DWR attributes and parameters. Explore more FIFO devices from Texas Instruments

Specs

Maximum Access Time:

9 ns

Cycle Time:

16.67 ns

JESD-30 Code:

R-PDSO-G28

JESD-609 Code:

e4

Length:

17.9 mm

Memory Density:

64 bit

Memory IC Type:

Memory Width:

1

Moisture Sensitivity Level (MSL):

1

No. of Functions:

1

No. of Terminals:

28

No. of Words:

64 words

No. of Words Code:

64

Operating Mode:

SYNCHRONOUS

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Organization:

64X1

Output Characteristics:

3-STATE

Output Enable:

YES

Package Body Material:

PLASTIC/EPOXY

Package Code:

SOP

Package Equivalence Code:

SOP28,.4

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Parallel or Serial:

SERIAL

Peak Reflow Temperature (C):

260

Power Supplies (V):

5

Qualification:

Not Qualified

Maximum Seated Height:

2.65 mm

Maximum Standby Current:

.0004 Amp

Sub-Category:

FIFOs

Maximum Supply Voltage (Vsup):

5.5 V

Minimum Supply Voltage (Vsup):

4.5 V

Nominal Supply Voltage / Vsup (V):

5

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Finish:

NICKEL PALLADIUM GOLD

Terminal Form:

GULL WING

Terminal Pitch:

1.27 mm

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Width:

7.5 mm

Trade Compliance

SN74ACT2227DWR Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.71

SB

8542.32.00.70

PCN

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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