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SN54ALS233AFK

Texas Instruments

SN54ALS233AFK by Texas Instruments

SN54ALS233AFK by Texas Instruments is a 16x5 FIFO chip carrier with 40ns cycle time, operating at 25MHz clock frequency. Suitable for military applications due to its -55 to 125°C temperature range and synchronous operation mode. It features a 3-STATE output and NO LEAD terminal form for parallel data processing.

Median Price

-

Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 4,087 parts In-Stock

1+ parts

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4,087

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Digiode

USA . 3,279 parts In-Stock

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3,279

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Parana Technologies

USA . 1,549 parts In-Stock

1+ parts

$4.543

100+ parts

-

1k+ parts

$4.990

10k+ parts

-

1,549

$4.543

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$4.990

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DigiPath Technology Company

USA . 194 parts In-Stock

1+ parts

$5.003

100+ parts

-

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194

$5.003

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ChromeModa Solutions

Germany . 2,265 parts In-Stock

1+ parts

$5.105

100+ parts

$4.186

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2,265

$5.105

$4.186

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IDEA Electronic Components Group

UK . 1,021 parts In-Stock

1+ parts

$5.105

100+ parts

-

1k+ parts

$4.594

10k+ parts

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1,021

$5.105

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$4.594

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One Stop Electronics

USA . 1,290 parts In-Stock

1+ parts

$12.000

100+ parts

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1,290

$12.000

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AZTECH Wire

Italy . 273 parts In-Stock

1+ parts

$18.132

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273

$18.132

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Corphita

USA . 3,896 parts In-Stock

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3,896

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Overview

Upgrade your electronics with the SN54ALS233AFK by Texas Instruments, a top-quality FIFO chip that offers seamless operation and reliable performance. Designed with precision and innovation, Texas Instruments ensures that this chip meets the highest standards for efficiency and functionality. Perfect for a wide range of applications, this FIFO chip is ideal for those looking to enhance their systems with speed and accuracy. Experience the value and benefits of Texas Instruments with the SN54ALS233AFK, providing you with the advantage you need for superior electronic solutions.

Feature Benefit Bullets

Package Body Material: CERAMIC, METAL-SEALED COFIRED

Ceramic and metal-sealed cofired package body material provides durability and reliability, making this product suitable for harsh environments.

Cycle Time: 40 ns

The fast cycle time of 40ns ensures efficient operation and quick data processing.

Operating Mode: SYNCHRONOUS

Synchronous operation ensures accurate and coordinated data transfer, making this product ideal for applications requiring precise timing.

Maximum Operating Temperature: 125 °C

With a high maximum operating temperature of 125°C, this product can withstand elevated temperatures, making it suitable for industrial or military use.

Technology: TTL

TTL technology enables reliable and high-speed data transmission, ensuring optimal performance in digital systems.

Memory IC Type: OTHER FIFO

Being a FIFO (First In, First Out) memory IC type, this product facilitates orderly data storage and retrieval, ensuring data integrity.

Technical Specifications

FIFO SN54ALS233AFK attributes and parameters. Explore more FIFO devices from Texas Instruments

Specs

Maximum Access Time:

35 ns

Additional Features:

FALL-THROUGH TIME 24NS

Maximum Clock Frequency (fCLK):

25 MHz

Cycle Time:

40 ns

JESD-30 Code:

S-CQCC-N20

Length:

8.89 mm

Memory Density:

80 bit

Memory IC Type:

Memory Width:

5

No. of Functions:

1

No. of Terminals:

20

No. of Words:

16 words

No. of Words Code:

16

Operating Mode:

SYNCHRONOUS

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-55 Cel

Organization:

16X5

Output Characteristics:

3-STATE

Output Enable:

YES

Package Body Material:

CERAMIC, METAL-SEALED COFIRED

Package Code:

Package Equivalence Code:

LCC20,.35SQ

Package Shape:

Package Style (Meter):

CHIP CARRIER

Parallel or Serial:

PARALLEL

Peak Reflow Temperature (C):

NOT SPECIFIED

Power Supplies (V):

5

Qualification:

Not Qualified

Maximum Seated Height:

2.03 mm

Sub-Category:

FIFOs

Maximum Supply Voltage (Vsup):

5.5 V

Minimum Supply Voltage (Vsup):

4.5 V

Nominal Supply Voltage / Vsup (V):

5

Surface Mount:

YES

Technology:

TTL

Temperature Grade:

Terminal Form:

NO LEAD

Terminal Pitch:

1.27 mm

Terminal Position:

QUAD

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Width:

8.89 mm

Trade Compliance

SN54ALS233AFK Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.71

SB

8542.32.00.70

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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